KOGA T., YAMAZAKI K., WAKIMOTO H., TAKAHASHI Y., KIRIHATA H., SEKI Y., "Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure", ISPSD'98, pp. 437-440, 3-6 June 1998.

KOGA T., YAMAZAKI K., WAKIMOTO H., TAKAHASHI Y., KIRIHATA H., SEKI Y., "Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure", ISPSD'98, pp. 437-440, 3-6 June 1998. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [99ART139]

Titre : KOGA T., YAMAZAKI K., WAKIMOTO H., TAKAHASHI Y., KIRIHATA H., SEKI Y., Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure, ISPSD'98, pp. 437-440, 3-6 June 1998.

Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits
Cité dans : [DIV137]  Recherche sur les mots clés : FIABILIT* ou RELIABILITY, octobre 1999.

Auteurs : Koga, T.; Yamazaki, K.; Wakimoto, H.; Takahashi, Y.; Kirihata, H.; Seki, - Y. Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan

Appears : in Power Semiconductor Devices & ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Page : 437 - 440
Date : 3-6 June 1998
ISBN : 0-7803-4752-8, IEEE Catalog Number: 98CH36212, Total Pages: xxiii+513, Accession Number : 6090272
Lien : private/KOGA.pdf - 638 Ko.

Abstract :
A 2.5k V-1.8 kA advanced type power pack IGBT has been developed
using an original multi-collector structure. From this
multi-collector structure, we can drastically reduce the thermal
stress occurring during the power cycling test. In addition to
the mechanical ruggedness, the high turn-off capability of
collector current I/sub c/=6600 A, peak collector voltage V/sub
c(peak)/=2400 V, junction temperature T/sub j/=125/spl deg/C and
the wide SCSOA of V/sub cc/=1800 V, I/sub c/=10000 A, T/sub
j/=125/spl deg/C, t/sub w/=15 /spl mu/s are realized. This high
electrical ruggedness is obtained by decreasing the operational
imbalance between chips.

Subjet_terms :
power bipolar transistors; ruggedness; reliability; power pack
IGBT; multi-collector structure; thermal stress; power cycling
test; mechanical ruggedness; turn-off capability; SCSOA;
collector current; peak collector voltage; junction temperature;
electrical ruggedness; operational imbalance; 6600 A; 2400 V; 125°C;
1800 V; 10000 A; 15 mus

Reference_cited : 4

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