MANZINI S., GALLERANO A., CONTIERO C., "Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors", ISPSD'98, pp. 415-418, 3-6 June 1998.

MANZINI S., GALLERANO A., CONTIERO C., "Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors", ISPSD'98, pp. 415-418, 3-6 June 1998. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [99ART138]

Titre : MANZINI S., GALLERANO A., CONTIERO C., Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors, ISPSD'98, pp. 415-418, 3-6 June 1998.

Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits
Cité dans : [DIV137]  Recherche sur les mots clés : FIABILIT* ou RELIABILITY, octobre 1999.

Auteurs : Manzini, S.; Gallerano, A.; Contiero, C. - SGS-Thomson Microelectron., Milan, Italy

Appears : in Power Semiconductor Devices & ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Page : 415 - 418
Date : 3-6 June 1998
ISBN : 0-7803-4752-8, IEEE Catalog Number: 98CH36212, Total Pages: xxiii+513, Accession Number : 6090267
Lien : private/MANZINI.pdf - 268 Ko.

Abstract :
The basic parameter controlling the hot-electron safe operating
area of DMOS transistors integrable in submicron
bipolar-CMOS-DMOS mixed processes is the series resistance of the
n-type lightly-doped layer on the source side of the devices. The
hot-electron-induced degradation in DMOS transistors is
correlated with the hot-electron gate current, rather than with
the substrate (p-body) current, and its measurement is a
sensitive, nondestructive way to bypass long-term reliability
tests.

Subjet_terms :
BIMOS integrated circuits; hot-electron injection; hot-electron
trapping; gate oxide; DMOS transistors; hot-electron safe
operating area; bipolar-CMOS-DMOS mixed processes; series
resistance; n-type lightly-doped layer; device source side;
hot-electron-induced degradation; hot-electron gate current;
substrate p-body current; reliability tests; SiO/sub 2/-Si; Si

Reference_cited : 7

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