Article : [99ART104]

Titre : BABA Y., MATUDA N., YAWATA S., IZUMI S., KAWAMURA N., KAWAKAMI T., High reliability UMOSFET with oxide-nitride complex gate structure, ISPSD'97, pp. 369-372, 26-29 May 1997.

Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits
Cité dans : [DIV137]  Recherche sur les mots clés : FIABILIT* ou RELIABILITY, octobre 1999.

Appears : in Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Page : 369 - 372
Date : 26-29 May 1997
ISBN : 0-7803-3993-2, IEEE Catalog Number: 97CH36086, Total Pages: 375, Accession Number : 5703954
Lien : private/BABA.pdf - 326 Ko.

Abstract :
In 1985, Ueda et al. proposed the UMOSFET structure. For the last ten years, ON resistance of UMOSFET has been much lower
than that of planar DMOSFET. However, the reliability of the trench gate characteristics of UMOSFET has not been reported
so far. In our experiment, the breakdown voltage of the trench gate was about half that of the planar gate in the same
oxide thickness, and the trench gate was easily destroyed by bias stress and thermal stress. The oxide-nitride complex
gate structure overcomes these difficulties. Optimizing complex film gate structure, logic level UMOSFET with high gate
reliability, same as that of planar MOSFET, can be obtained.

Subjet_terms :
MOSFET; UMOSFET; oxide-nitride complex gate structure; ON resistance; trench gate characteristics; breakdown voltage;
bias stress; thermal stress; gate reliability

Reference_cited : 5

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