Article : [99ART101]

Titre : KHAN M.K., ZDANCEWICZ F., BHALLA A., The effect of gate doping on the electrical conduction and reliability of thick gate oxides, ISPSD'97, pp. 145-148, 26-29 May 1997.

Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits
Cité dans : [DIV137]  Recherche sur les mots clés : FIABILIT* ou RELIABILITY, octobre 1999.

Appears : Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Page : 145 - 148
Date : 26-29 May 1997
ISBN : 0-7803-3993-2, IEEE Catalog Number: 97CH36086, Total Pages: 375, Accession Number : 5703903
Lien : private/KHAN.pdf - 325 Ko.

Abstract :
Previous investigations have shown that excessive gate oxide
leakage currents at negative gate potentials observed in MOS
power products are due to the presence of phosphorus in the gate
oxide. During polysilicon gate doping some phosphorus atoms may
pile up at the PSi/SiO2 interface and also may diffuse into the
gate oxide due to high diffusion temperatures and longer soaking
times. Subsequent high temperatures and plasma processing steps
result in the ionization of these atoms. The neutralization of
these ions during negative gate voltage testing gives rise to
abnormal gate oxide leakage currents. It is shown that the
presence of any Column V element in the gate oxide, if ionized,
will result in excessive gate oxide leakage currents at negative
potentials. The level of excessive leakage will depend on the
amount of pile up of the impurity at the polysilicon gate/SiO2
interface. Data show that abnormally high gate oxide leakages due
to the presence of these impurities in the gate oxide of MOS,
IGBT and MCT devices may adversely affect the yield and the long
term reliability.

Subjet_terms :
leakage currents; electrical conduction; thick gate oxides;
leakage currents; negative gate potentials; MOS power products;
polysilicon gate doping; diffusion temperatures; soaking times;
plasma processing steps; negative gate voltage testing; gate
oxide leakages; yield; long term reliability; Si-SiO/sub 2/

Reference_cited : 3

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