Article : [99ART047]

Titre : BALIGA B.J., Trends in power discrete devices, Proceedings of the 10th International Symposium on Power Semiconductor Devices & ICs ISPSD 98, pp 5-10, june 1998.

Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits
Cité dans :[99DIV104] Recherche sur l'auteur B. JAYANT BALIGA, juin 2001.

Appears : in Power Semiconductor Devices & ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Pages : 5 - 10
Date : 3-6 June 1998
ISBN : 0-7803-4752-8, IEEE Catalog Number: 98CH36212, Total Pages: xxiii+513, Accession Number: 6083002
Stockage : Thierry LEQUEU (from bibliothèque R&D)
Lien : private/BALIGA1.pdf - 6 pages, 545 Ko.

Abstract :
Over the last 10 years, revolutionary advances have occurred in power discrete devices which have spurred significant
advances in the capability of power electronic systems. The introduction of power MOSFETs in the 1970s and the power
IGBT in the 1980s enabled design of very compact, high efficiency systems due to the greatly enhanced power gain
resulting from the high input impedance of these structures. Since then, research at PSRC on a variety of MOS-gated
thyristors (DG-BRT, EST) has been conducted, resulting in some promising improvements in the trade-off between
on-state power loss, switching power loss, and the forward biased safe-operating-area (FBSOA). Concurrent improvements
in power rectifiers have been achieved at low voltage ratings using the TMBS structure, and at high voltage ratings
using the MPS structure. On the longer term, silicon carbide Schottky rectifiers and power MOSFETs offer another
10-fold improvement in performance if technological and cost barriers can be overcome.

Subject_Terms :
power MOSFET; power discrete devices; power electronic systems; power MOSFETs; power IGBT; power gain; input impedance;
MOS-gated thyristors; DG-BRT MOS-gated thyristors; EST MOS-gated thyristors; on-state power loss; switching power loss;
forward biased safe-operating-area; power rectifiers; TMBS rectifier structure; voltage ratings; MPS rectifier structure;
silicon carbide Schottky rectifiers; silicon carbide power MOSFETs; cost barriers; SiC

References_Cited : 47

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