Article : [SHEET239]
Info : COMPENDEX Answer Number 3, le 16/03/2000.
Titre : 4H-SiC gate turn-off (GTO) thyristor development, 1997.
Cité dans : [DATA049] Recherche sur l'auteur Dante E. PICCONE, mars 2000.Auteur : Casady, J.B. (Northrop Grumman Science and Technology Cent Pittsburgh, PA, USA)
Meeting : Proceedings of the 1997 7th International Conference on Silicon Carbide, III-Nitrides and Related Materials, ICSCIII.Part 2 (of 2).
Location : Stockholm, Sweden
Date : 31 Aug 1997-05 Sep 1997
Source : Materials Science Forum v 264-268 n pt 2 1998.
Pages : 1069 - 1072
CODEN : MSFOEP
ISSN : 0255-5476
Année : 1998
Meeting_Number : 48160
Document_Type : Journal
Treatment_Code : Experimental
Language : English
Stockage :
Abstract :
4H-SiC inverted, asymmetrical gate turn-off thyristors (GTOs) were
fabricated and characterized, over an ambient temperature range of 25
degree C to 390 degree C.Device performance was evaluated with respect to
forward drop, current density, and blocking voltage.At room temperature,
forward blocking voltages of up to 1000 V were achieved in smaller area
devices (6.5 multiplied by 10 minus 4 cm2 active area) while larger area
devices (3.63 multiplied by 10 minus 3 cm2 active area) could block up to
700 V.Reverse blocking was approximately 50 V for these asymmetrical
devices. Current densities were evaluated up to 3500 A/cm2, with the
forward voltage drop strongly affected by temperature and anode contact
resistance.(Author abstract) 11 Refs.
Accession_Number : 1998(20):3149
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