J. PILACINSKI, J. DESKUR, S. AZZOPARDI, "Investigations on switching characteristics of an IGBT", EPE'2003, Toulouse, 9 pages.

J. PILACINSKI, J. DESKUR, S. AZZOPARDI, "Investigations on switching characteristics of an IGBT", EPE'2003, Toulouse, 9 pages. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART559]

Titre : J. PILACINSKI, J. DESKUR, S. AZZOPARDI, Investigations on switching characteristics of an IGBT, EPE'2003, Toulouse, 9 pages.

Cité dans : [DIV213]  EPE'2003, European Conference on Power Electronics and Applications, Toulouse, France, du 2 au 4 septembre 2003.
Cité dans : [DIV432]  Recherche sur l'auteur Stéphane AZZOPARDI, juillet 2004.

Auteur : PILACINSKI Jan - POZNAN UNIVERSITY OF TECHNOLOGY - POZNAN - POLAND
Lien : mailto:Jan.Pilacinski@put.poznan.pl
Auteur : DESKUR Jan - POZNAN UNIVERSITY OF TECHNOLOGY - POZNAN - POLAND
Lien : mailto:Jan.Deskur@put.poznan.pl
Auteur : AZZOPARDI Stéphane - IXL-CNRS UMR5818 Universite Bordeaux 1 - TALENCE, CEDEX - FRANCE
Lien : mailto:azzo@ixl.u-bordeaux.fr

Date : du 2 au 4 septembre 2003
Congrés : 10th European Conference on Power Electronics and Applications
Lien : private/2003PP1040.pdf - 455 Ko, 9 pages.

Keywords : Device characterization, Device modeling, IGBT, Power semiconductor device.

Abstract :
In this paper, the studies on the dynamic properties of the Punch-Through IGBT under inductive load
switching without any freewheeling diode reverse recovery influence are reported. The changes in the
transistor collector-emitter resistance reflecting the dynamics of both the switch-on and switch-off
transient processes under various electro-thermal conditions have been analyzed. The resistance has
been found referring to the current and voltage runs registered across the device terminals. The
investigations have been carried out for a wide range of the load current, supply voltage, gate
resistance and device temperature values.

Bibliographie

References : 9
[1] : S. Azzopardi, A. Kawamura, H. Iwamoto, "Experimental investigations on the switching performances of 1200V conventional PT-IGBT and new PT IGBT using local lifetime control for clamped inductive load without freewheeling diode reverse recovery effect", Proc. of 9 th EPE International Power Electronics and Motion Control Conference, Kosice, vol.3., pp.227-233, 2000.
[2] : B. Jayant Baliga, Modern power devices, Singapore, John Wiley & Sons, Inc. 1987.
[3] : F. Calmon, J.P Chante, B.Reymint, A.Senes, "Analysis of the IGBT dV/dt in hard switching mode", Proc. of EPE Sevilla, vol.1., pp. 234-239, 1995.
[4] : S. Azzopardi, O.Briat, J. Deskur, J. Pilacinski, J.-M.Vinassa, E.Woirgard, C.Zardini, " A new fast and accurate IGBT PSPICE modelling for turn-on and turn-off using simple functional models" - in preparation.
[5] : A.R.Hefner, JR. "Analytical modeling of device-circuit interactions for the power insulated gate transistor (IGBT)", IEEE Trans. On Ind. Appl., vol.26, No.6., pp. 995-1005
[6] : International Rectifier Application note AN-983, IGBT characteristics
[7] : J.M. Li, D. Lafore, J. Arnould B. Reymond. "Analysis of switching behaviour of the power insulated gate bipolar transistor by soft modeling", Proc. of 5 th EPE European Conference on Power Electronics and Applications, Brighton, vol. 1., pp. 220-225, 1993.
[8] : Deskur J.M., Pilacinski J.: SCR and GTO Thyristor model for converter simulation. Proc. of 5 th ISPS’2000, Prague, pp.187-192.
[9] : POWEREX Catalogue Data of CM75DU-24H

  [1] :  [PAP158]  -------
  [2] : [LIVRE157] B.J. BALIGA, Modern Power Devices, édition John Wiley & Sons, 1987.
  [3] :  [PAP158]  -------
  [4] :  [PAP158]  -------
  [5] :  [PAP158]  -------
  [6] :  [DATA159] International Rectifier, IGBT Characteristics, AN-983 (v.Int), 16 pages.
  [7] :  [PAP158]  -------
  [8] :  [PAP158]  -------
  [9] :  [PAP158]  -------

Lien : DIV126.HTM#POWEREX

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