Recherche sur l'auteur "Stéphane AZZOPARDI", juillet 2004.
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Titre : Recherche sur l'auteur Stéphane AZZOPARDI, juillet 2004.

Cité dans : [DIV096]  Recherches bibliographiques diverses, septembre 2016.
Cité dans : [DATA147] IXL, Laboratoire IXL, Université de Bordeaux, Talence, France, http://www.ixl.u-bordeaux.fr

Date : juillet 2004

Vers : Recherche du dimanche 13 juin 2004
Vers : Recherche STN du mercredi 7 juillet 2004


Recherche du dimanche 13 juin 2004

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  [1] :  [DATA147] IXL, Laboratoire IXL, Université de Bordeaux, Talence, France, http://www.ixl.u-bordeaux.fr
  [2] :  [DIV289]  Recherche sur l'auteur Christian ZARDINI, juillet 2004.
Lien : S-AZZOPARDI.htm - le 3 décembre 2001

Année 2004

  [1] :  [ART548]  S. AZZOPARDI, J.-M. VINASSA, E. WOIRGARD, C. ZARDINI, O. BRIAT, A systematic hard- and soft-switching performances evaluation of 1200 V punchthrough IGBT structures, IEEE Transactions on Power Electronics, Vol. 19, No. 1, January 2004, pp. 231-241.

Année 2003

  [1] :  [ART559]  J. PILACINSKI, J. DESKUR, S. AZZOPARDI, Investigations on switching characteristics of an IGBT, EPE'2003, Toulouse, 9 pages.
  [2] :  [ART556]  S. AZZOPARDI, O. BRIAT, J.M. VINASSA, Experimental comparison of two hybridization strategies for ESS-battery association in heavy duty electric vehicles, EPE'2003, Toulouse, 6 pages.
  [3] :  [ART558]  S. AZZOPARDI, E. WOIRGARD, J.-M. VINASSA, O. BRIAT, C. ZARDINI, IGBT Power modules thermal characterization : what is the optimum between a low current - high voltage or a high current - low voltage test condition for the same electrical power?, ESREF'2
  [4] :  [ART437]  S. AZZOPARDI, E. WOIRGARD, J.-M. VINASSA, O. BRIAT, C. ZARDINI, IGBT Power modules thermal characterization : what is the optimum between a low current - high voltage or a high current - low voltage test condition for the same electrical power?, Microel

Année 2002

  [1] :  [ART355]  O. BRIAT, J. M. VINASSA, S. AZZOPARDI, C. ZARDINI, J. L. AUCOUTURIER, Etude expérimentale d'une source hybride a Accumulateur Cinétique d'énergie pour véhicules électriques lourds, EPF'2002.

Année 2001

  [1] :  [ART557]  S. AZZOPARDI, A. KAWAMURA, H. IWAMOTO, O. BRIAT, J.M. VINASSA, E. WOIRGARD, C. ZARDINI, Local lifetime control IGBT structures : Turn-off performances comparison for hard- and soft-switching between 1200V trench PT- and new planar PT-IGBTs, Microelectro
  [2] :  [PAP374]  S. AZZOPARDI, A. KAWAMURA, H. IWAMOTO, O. BRIAT, J.M. VINASSA, E. WOIRGARD, C. ZARDINI, Local lifetime control IGBT structures : Turn-off performances comparison for hard- and soft-switching between 1200V trench PT- and new planar PT-IGBTs, ESREF'2001,

Année 2000

  [1] :  [PAP158]  -------

Année 1999

  [1] :  [PAP481]  S. AZZOPARDI, M. TRIVEDI, C. ZARDINI, K. SHENAI, A Punch-Through IGBT Model Using a Simple Technological Parameters Extraction Method for Two-Dimensional Physical Simulation, EPE'99.
  [2] :  [PAP479]  S. AZZOPARDI, J.-M. VINASSA, C. ZARDINI, Behaviour of Fast and Ultra-Fast 600V Punch-Through IGBT under Unclamped Inductive Switching Stress, EPE'99.

Année 1998

  [1] : [THESE112] S. AZZOPARDI, Contribution à la caractérisation et à la modélisation de l'IGBT en vue d'une hybridation destinée à fonctionner à température élevée pour le véhicule électrique, 1998, 392 pages.
  [2] :  [ART560]  S. AZZOPARDI, A. JAMET, J.-M. VINASSA, C. ZARDINI, Switching performance comparison of 1200V punch-through and non punch-through igbts under hard-switching at high temperature, IEEE, pp. 1201-1207, Aout 1998.

Année 1997

  [1] :  [PAP478]  S. AZZOPARDI, J.-M. VINASSA, C. ZARDINI, Investigations on the Internal Physical Behaviour of 600V Punch-Through IGBT under Latch-up at High Temperature, ESSDERC'97.
  [2] :  [PAP476]  S. AZZOPARDI, J.-M. VINASSA, C. ZARDINI, Comparative analysis of switching dynamics of punch-through and non punch-through IGBTs at high temperature, EPE'97.
  [3] :  [PAP482]  S. AZZOPARDI, C. JAMET, J.-M. VINASSA, C. ZARDINI, Dynamics Behaviour of Punch-Through IGBT in Hard-Switching Converters at High Temperature, European Power Electronics Proc. Conf. 1997, vol.4, pp. 1-6.

Année 1996

  [1] :  [PAP228]  S. AZZOPARDI, C. ZARDINI, Temperature effects on the internal physical and electrical behaviour of n-channel punch-through insulated gate bipolar transistor, THERMINIC'96.


Recherche STN du mercredi 7 juillet 2004

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Question : author: stephane azzopardi
Réponses : 2 réponses Dans la banque de données COMPENDEX
Réponses : 19 réponses Dans la banque de données INSPEC

Titres dans la banque de données COMPENDEX
1 : A systematic hard- and soft-switching performances evaluation of 1200 V punchthrough IGBT structures.
2 : Strategy for designing accelerated aging tests to evaluate IGBT power modules lifetime in real operation mode.

Titres dans la banque de données INSPEC
3 : A systematic hard- and soft-switching performances evaluation of 1200 V punchthrough IGBT structures.
4 : IGBT power modules thermal characterization: what is the optimum between a low current-high voltage or a high current-low voltage test condition for the same electrical power?.
5 : Strategy for designing accelerated aging tests to evaluate IGBT power modules lifetime in real operation mode.
6 : Experimental investigations on the switching performances of 1200 V conventional PT-IGBT and new PT-IGBT using local lifetime control for clamped inductive load without freewheeling diode reverse recovery effect.
7 : Soft-switching performances of 1200V new punch-through IGBT using local lifetime control at high temperature.
8 : Soft-switching turn-off characterization at high temperature of 1200 V trench IGBT using local lifetime control.
9 : Local lifetime control IGBT structures: turn-off performances comparison for hard- and soft-switching between 1200 V trench and new planar PT-IGBTs.
10 : Characterization of 1200 V trench IGBT using local lifetime control for clamped inductive load under extensive measurements without freewheeling diode reverse recovery influence.
11 : Switching performances of 1200 V conventional planar and trench punch-through IGBTs for clamped inductive load under extensive measurements.
12 : Behaviour of fast and ultra-fast 600 V punch-through IGBT under unclamped inductive switching stress.
13 : A punch-through IGBT model using a simple technological parameters extraction method for two-dimensional physical simulation.
14 : Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT.
15 : Performances of 1200 V punch-through and nonpunch-through IGBTs under unclamped inductive switching.
16 : Dynamics behaviour of punch-through IGBT converters at high temperature.
17 : A study of 600V punch-through IGBT dynamics under unclamped inductive switching.
18 : Hybrid power modules using a metal matrix composite baseplate: An evaluation.
19 : Al/SiC baseplate hybrid power modules: evaluation of the thermomechanical performances.
20 : Switching performances comparison of 1200 V punch-through and nonpunch-through IGBTs under hard-switching at high temperature.
21 : Investigations on the internal physical behaviour of 600V punch-through IGBT under latch-up at high temperature.

  [1] :  [ART548]  S. AZZOPARDI, J.-M. VINASSA, E. WOIRGARD, C. ZARDINI, O. BRIAT, A systematic hard- and soft-switching performances evaluation of 1200 V punchthrough IGBT structures, IEEE Transactions on Power Electronics, Vol. 19, No. 1, January 2004, pp. 231-241.
  [2] :  [PAP158]  -------
  [3] :  [ART548]  S. AZZOPARDI, J.-M. VINASSA, E. WOIRGARD, C. ZARDINI, O. BRIAT, A systematic hard- and soft-switching performances evaluation of 1200 V punchthrough IGBT structures, IEEE Transactions on Power Electronics, Vol. 19, No. 1, January 2004, pp. 231-241.
  [4] :  [ART437]  S. AZZOPARDI, E. WOIRGARD, J.-M. VINASSA, O. BRIAT, C. ZARDINI, IGBT Power modules thermal characterization : what is the optimum between a low current - high voltage or a high current - low voltage test condition for the same electrical power?, Microel
  [5] :  [PAP158]  -------
  [6] :  [PAP158]  -------
  [7] :  [PAP158]  -------
  [8] :  [PAP374]  S. AZZOPARDI, A. KAWAMURA, H. IWAMOTO, O. BRIAT, J.M. VINASSA, E. WOIRGARD, C. ZARDINI, Local lifetime control IGBT structures : Turn-off performances comparison for hard- and soft-switching between 1200V trench PT- and new planar PT-IGBTs, ESREF'2001,
  [9] :  [PAP158]  -------
 [10] :  [PAP158]  -------
 [11] :  [PAP158]  -------
 [12] :  [PAP479]  S. AZZOPARDI, J.-M. VINASSA, C. ZARDINI, Behaviour of Fast and Ultra-Fast 600V Punch-Through IGBT under Unclamped Inductive Switching Stress, EPE'99.
 [13] :  [PAP481]  S. AZZOPARDI, M. TRIVEDI, C. ZARDINI, K. SHENAI, A Punch-Through IGBT Model Using a Simple Technological Parameters Extraction Method for Two-Dimensional Physical Simulation, EPE'99.
 [14] :  [PAP158]  -------
 [15] :  [PAP158]  -------
 [16] :  [PAP482]  S. AZZOPARDI, C. JAMET, J.-M. VINASSA, C. ZARDINI, Dynamics Behaviour of Punch-Through IGBT in Hard-Switching Converters at High Temperature, European Power Electronics Proc. Conf. 1997, vol.4, pp. 1-6.
 [17] :  [PAP158]  -------
 [18] :  [PAP158]  -------
 [19] :  [PAP158]  -------
 [20] :  [ART560]  S. AZZOPARDI, A. JAMET, J.-M. VINASSA, C. ZARDINI, Switching performance comparison of 1200V punch-through and non punch-through igbts under hard-switching at high temperature, IEEE, pp. 1201-1207, Aout 1998.
 [21] :  [PAP478]  S. AZZOPARDI, J.-M. VINASSA, C. ZARDINI, Investigations on the Internal Physical Behaviour of 600V Punch-Through IGBT under Latch-up at High Temperature, ESSDERC'97.


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