SYMPOSIUM Q - Materials Issues for High Temperature Superconductor Applications

In the past 5 years prototype products based on high Tc superconductors have been produced including wires, tapes and thin films as well. Further progess is expected to be due to the mastering of materials problems associated with the complex multicomponent chemistry of the HTC compounds. It is well established that the success of semiconductor device technology is closely connected with the perfection in materials control at the atomic level for both, the base material and the processing as well. Similar trends are expected in the field of the HTC applications. Due to the complex crystal chemistry and the basic electronic mechanisms closely interrelated with the local crsytal properties materials issues for bulk and thin film applications of HTC materials are even more challenging compared to semiconductor applications. This symposium intends to investigate the relation between crystal chemistry, processing, tailoring defect structures and the relevant properties for bulk and thin film applications.

Topics addressed in this symposium are

* Point and one-dimensional defect control and microcharacterization of HTS materials

* Grain boundaries and interfaces

* Processing and process-induced defects

* Controlled substrate modifications and buffer layers

* HTC thin film growth and defect control

* Large area thin film deposition

* Mechanisms for flux-line pinning

* New and emerging materials for applications

* New device concepts and prototype devices.

THIS SYMPOSIUM IS JOINTLY ORGANIZED BY E- MRS AND ESAS

Scientific Committee: J. Evetts (UK), H.C. Freyhardt (Germany), H.-U. Habermeier (Germany), H. Rogalla (The Netherlands), Z.-X. Zhao (China), Juan Farre (Denmark), G. Donaldson (UK), V. Pan (Ukrainia), M. Marezio (Italy)

Symposium Organizers: