SYMPOSIUM O - Thin Film Materials for Large Area Electronics

Large Area Electronics is a major market, involving Displays, Imagers, X-ray detectors and large area sensors. It provides a strong demand for high performance, low cost, thin film materials. These include polycrystalline silicon, amorphous silicon, amorphous gate insulators, novel forms of carbon, light emitting materials and photoconductive materials. The future device developments are limited by the material’s performance. This symposium brings together recent advances in areas such as :

• Thin Film Transistors (TFTs)
• Crystallisation methods for polycrystalline silicon
• Amorphous silicon and gate insulator materials for TFTs
• Photoconductive materials
• Light emitting materials
• Materials for Field Emission displays
• Plasma processing
• Materials Characterisation

The list of invited speakers includes :

• S. Uchikoga (Toshiba, Japan)- Polysilicon TFTs
• J. Boyce (Xerox PARC, USA) *
• J. Jang (Korea) - Metal induced crystallisation of amorphous silicon
• M. Kondo (ETL, Japan) - Plasma deposition of microcrystalline silicon
• M. Hoheisel (Siemens AG, Germany)- Amorphous semiconductor based X-ray detectors
• D. Pribat (Thomson-CSF, France) - Adressing of organic electroluminescent displays
• R. Wehrspohn (Philips, UK) - Stability of a-Si:H TFTs
• J.H. Werner (Stuttgart Univ., Germany) – From polycrystalline to crystalline silicon on glass
• L. Mariucci (IESS-CNRS, Italy) – Advanced excimer laser crystallisation techniques
• R. Brenot (Ecole Polytechnique, France) – Silicon growth studied by in-situ TRMC
• A. Flewitt (Cambridge University , UK)- Low temperature growth of silicon nitrides
• M. Kessels (TU Eindhoven, NL) - Growth processes of amorphous silicon

* to be confirmed

Scientific Committee : Dr. E. Fogarassy (Strasbourg, F); Prof. G. Leising (Graz , A), Prof. R. Martins (Lisbon, P), Prof. J.R.Morante (Barcelona, S); Dr. D. Pribat (Thomson-CSF, F); Prof. I. Shimizu (Tokyo, J); Prof. S. Veprek (Muenchen, D)

Symposium organizers: