Article : [SHEET376]

Info : COMPENDEX Answer Number 4, le 19/06/2000.

Titre : Computer-aided investigation of the turn-off performance of G.T.O. thyristors.

Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France.

Meeting : Third International Conference on Power Electronics and Variable-Speed Drives.
Location : London, Engl
Date : 13 Jul 1988-15 Jul 1988
Info : organization : IEE, Power Div, London, Engl; Inst of Electrical Engineers of Japan, Jpn; IEEE, Industry Applications Soc, New York, NY, USA; IEEE, Industrial Electronics Soc, New York, NY, USA; Inst of Engineers of Ireland, Irel; et al
Location : London, Engl
Date : 13 Jul 1988-15 Jul 1988
Source : IEE Conference Publication n 291.Publ by IEE, London, Engl.p 71-74
CODEN : IECPB4
Année : 1988
Meeting_Number : 12156
Document_Type : Conference Article
Treatment_Code : Theoretical; Experimental
Language : English
Stockage :

Abstract :
A one-dimensional numerical model has been derived for the
parametric study of the turn-off performance of Gate-Turn-Off
thyristors.This model takes into account all major physical effects
and represents the interactions between the inner device charge
dynamics and the operation of an external circuit.It is shown that,
in spite of the one-dimensional simplification, this model provides
an accurate description of GTO turn-off and can be used as a
computer aid for circuit design and device selection as well as for
device structure design.8 Refs.

Accession_Number : 1989(7):67839

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