P. KEMPF, R. HADAWAY, J. KOLK, "Complementary metal oxide semiconductor compatible high-voltage transistors", 1987.

P. KEMPF, R. HADAWAY, J. KOLK, "Complementary metal oxide semiconductor compatible high-voltage transistors", 1987. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET217]

Info : COMPENDEX Answer Number 26 - 29/09/1999

Titre : P. KEMPF, R. HADAWAY, J. KOLK, Complementary metal oxide semiconductor compatible high-voltage transistors, 1987.

Cité dans : [DIV066]  Recherche sur le mot clé : TRIAC*

Auteur : P. Kempf, (Northern Telecom Electronics Ltd, Ottawa, Ont, Can)
Auteur : R. Hadaway
Auteur : J. Kolk

Source : Can J Phys v 65 n 8, Third Can Semicond Technol Conf, Ottawa, Ont, Can
Date : August 1987
Page : 1003 à 1008
CODEN : CJPHAD
ISSN : 0008-4204
Document_Type : Journal
Treatment_Code : Experimental
Language : English

Abstract :
The purpose of this work was to study the implementation of high-voltage transistors using standard 3-5 mu m complementary metal oxide semiconductor (CMOS) technology with
a minimum of additional photolithographic or implant steps.A fabrication process was designed to accommodate a variety of high-voltage transistors with greater than 450 V
breakdown voltage and low-voltage CMOS. Extensive use was made of a two-dimensional device model and a one-dimensional process model to determine suitable process
parameters.The necessary conditions to produce a high-voltage double-diffused metal oxide semiconductor (DMOS) structure, as well as both n-well and p-well regions for CMOS
transistors, and a thick gate oxide required to sustain the full blocking voltage were the main determinants of the process flow.Lateral DMOS (LDMOS), vertical DMOS (VDMOS),
conductivity modulated FET (COMFET), and MOS triac (TRIMOS) devices were fabricated on the same chip as standard CMOS transistors using the developed fabrication
sequence.(Edited author abstract)

Controlled_Indexing : *SEMICONDUCTOR DEVICES, MOSFET:Fabrication; SEMICONDUCTOR DEVICES, MOS:Fabrication

Supplementary_Indexing : CMOS TECHNOLOGY; COMFETS; DMOS DEVICES; TRIMOS DEVICES; MOS TRIAC DEVICES

Accession_Number : 1988(6):85753

Références : 10 refs.

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