B.K. BOSE, "Evaluation of modern power semiconductor devices and future trends of converters", IEEE Transactions on Industry Applications, pp. 403-413, vol. 28, no. 2, March-April 1992.

B.K. BOSE, "Evaluation of modern power semiconductor devices and future trends of converters", IEEE Transactions on Industry Applications, pp. 403-413, vol. 28, no. 2, March-April 1992. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET124]

Titre : B.K. BOSE, Evaluation of modern power semiconductor devices and future trends of converters, IEEE Transactions on Industry Applications, pp. 403-413, vol. 28, no. 2, March-April 1992.

Cité dans : [DIV398]  Les revues IEEE Transactions on Industry Applications et IEEE Industry Applications Society - IAS, novembre 2005.
Cité dans :[99DIV014] Recherche sur l'auteur Bimal K. BOSE, 1999.
Cité dans :[99ART122] B.K. BOSE, Evaluation of modern power semiconductor devices and future trend of converters, Industry Applications Society Annual Meeting, 1-5 Oct. 1989,  vol. 1, pp. 790-797.

Auteur : B.K. Bose - Dept. of Electr. Eng., Tennessee Univ., Knoxville, TN, USA

Source : IEEE Transactions on Industry Applications
Page : 403 - 413
Date : March-April 1992
Volume : 28
Issue : 2
ISSN : 0093-9994
CODEN : ITIACR
Stockage : Thierry LEQUEU
Lien : private/BOSE3.pdf - 1023 Ko.

Abstract :
The author reviews the modern power semiconductor devices that
appeared in the 1980s, i.e., the insulated gate bipolar
transistor (IGBT), static induction transistor (SIT), static
induction thyristor (SITH), and the recently introduced
MOS-controlled thyristor (MCT). The characteristics of these
devices are discussed and compared from the viewpoint of power
electronics applications. Although the IBGT is well known, the
power electronics community is somewhat unfamiliar with the
latter three devices. For completeness, a brief review of other
power devices, such as the thyristor, triac, gate turn-off
thyristor (GTO), bipolar transistor (BJT), and power MOSFET is
also incorporated. Future trends are outlined.<>

Subjet_terms :
power semiconductor devices; insulated gate bipolar transistor;
IGBT; static induction transistor; static induction thyristor;
MOS-controlled thyristor; triac; gate turn-off thyristor; GTO;
bipolar transistor; power MOSFET; trends; bipolar transistors;
field effect transistors; insulated gate bipolar transistors;
insulated gate field effect transistors; power convertors; power
transistors; thyristors

Accession_Number : 4166246
References : 36

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