Revue : [REVUE173]
Titre : IEEE ELECTRON DEVICES SOCIETY, IEEE TRANSACTIONS ON ELECTRON DEVICES, July 2000, Volume 47, Number 07.
Auteur : A PUBLICATION OF THE IEEE ELECTRON DEVICES SOCIETY
Date : July 2000
Volume : 47
Number : 07
Lien : elde4707.htm
SPECIAL SECTION ON 1999 EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE
Editorial--Expanded Papers from the 1999 European Solid-State
Device Research Conference
R. P. Jindal
[p. 1309]
PAPERS
Compound Semiconductor Devices
Theory and Small Signal Analysis for a New Bipolar Injection
Transit Time Device (BIPOLITT)
L. Chen and D.-S. Pan
[p. 1310]
Modeling of Current Gain's Temperature Dependence in
Heterostructure-Emitter Bipolar Transistors
E. S. Yang, C. C. Hsu, H. B. Lo, and Y.-F. Yang
[p. 1315]
Materials Processing and Packaging
GaN N- and P-Type Schottky Diodes: Effect of Dry Etch Damage
X. A. Cao, S. J. Pearton, G. T. Dang, A. P. Zhang, F. Ren, and J.
M. Van Hove
[p. 1320]
Optoelectronics, Displays, Imaging
Comparison of Hole and Electron Intersubband Absorption Strengths
for Quantum Well Infrared Photodetectors
J. L. Pan and C. G. Fonstad, Jr.
[p. 1325]
The Red Shift of ZnSSe Metal-Semiconductor-Metal Light Emitting
Diodes with High Injection Currents
Y. K. Su, W. R. Chen, S. J. Chang, F. S. Juang, W. H. Lan, A. C.
H. Lin, and H. Chang
[p. 1330]
Dynamic Performance of UV Photodetectors Based on Polycrystalline
Diamond
S. Salvatori, M. C. Rossi, and F. Galluzzi
[p. 1334]
Reliability
Stress Induced Leakage Current Analysis via Quantum Yield
Experiments
A. Ghetti, M. Alam, J. Bude, D. Monroe, E. Sangiorgi, and H.
Vaidya
[p. 1341]
Comparative Physical and Electrical Metrology of Ultrathin Oxides
in the 6 to 1.5 nm Regime
K. Ahmed, E. Ibok, G. Bains, D. Chi, B. Ogle, J. J. Wortman, and
J. R. Hauser
[p. 1349]
Silicon Devices
Plasma-Induced Charging Damage in Ultrathin (3-nm) Gate Oxides
C.-C. Chen, H.-C. Lin, C.-Y. Chang, M.-S. Liang, C.-H. Chien,
S.-K. Hsien, T.-Y. Huang, and T.-S. Chao
[p. 1355]
The Performance and Reliability of PMOSFET's with Ultrathin
Silicon Nitride/Oxide Stacked Gate Dielectrics with Nitrided
Si-SiO2 Interfaces Prepared by Remote Plasma Enhanced CVD and
Post-Deposition Rapid Thermal Annealing
Y. Wu, G. Lucovsky, and Y.-M. Lee
[p. 1361]
Highly Robust Ultrathin Silicon Nitride Films Grown at
Low-Temperature by Microwave-Excitation High-Density Plasma for
Giga Scale Integration
K. Sekine, Y. Saito, M. Hirayama, and T. Ohmi
[p. 1370]
Performance of the Floating Gate/Body Tied NMOSFET Photodetector
on SOI Substrate
W. Zhang, M. Chan, and P. K. Ko
[p. 1375]
Inverse Modeling of Two-Dimensional MOSFET Dopant Profile via
Capacitance of the Source/Drain Gated Diode
C. Y. T. Chiang, Y. T. Yeow, and R. Ghodsi
[p. 1385]
Analysis of Leakage Currents and Impact on Off-State Power
Consumption for CMOS Technology in the 100-nm Regime
W. K. Henson, N. Yang, S. Kubicek, E. M. Vogel, J. J. Wortman, K.
De Meyer, and A. Naem
[p. 1393]
Use of Transient Enhanced Diffusion to Tailor Boron Out-Diffusion
H.-H. Vuong, Y.-H. Xie, M. R. Frei, G. Hobler, L. Pelaz, and C. S.
Rafferty
[p. 1401]
Fabrication and Analysis of Deep Submicron Strained-Si N-MOSFET's
K. Rim, J. L. Hoyt, and J. F. Gibbons
[p. 1406]
Solid-State Device Phenomena
Time Dependent Breakdown of Ultrathin Gate Oxide
A. Yassine, H. E. Nariman, M. McBride, M. Uzer, and K. R. Olasupo
[p. 1416]
Studies of High DC Current Induced Degradation in III-V Nitride
Based Heterojunctions
W. Y. Ho, C. Surya, K. Y. Tong, L. W. Lu, and W. K. Ge
[p. 1421]
1/f Noise Model of Fully Overlapped Lightly Doped Drain MOSFET
A. Kumar, E. Kalra, S. Haldar, and R. S. Gupta
[p. 1426]
Accurate Contact Resistivity Extraction on Kelvin Structures with
Upper and Lower Resistive Layers
J. Santander, M. Lozano, A. Collado, M. Ullan, and E. Cabruja
[p. 1431]
Hot Electron and Hot Hole Degradation of UHV/CVD SiGe HBT's
U. Gogineni, J. D. Cressler, G. Niu, and D. L. Harame
[p. 1440]
Equations of State for Silicon Inversion Layers
M. G. Ancona
[p. 1449]
Vacuum Electron Devices
Sensitivity Analysis of TWT's Small Signal Gain Based on the
Effect of Rod Shape and Dimensions
S. D'Agostino, F. Emma, and C. Paoloni
[p. 1457]
BRIEFS
Effect of Vacuum Ultraviolet Radiation on the Gap Fill Properties
of Teflon Amorphous Fluoropolymer Film Deposited by Direct Liquid
Injection
V. Parihar, R. Singh, R. Sharangpani, S. D. Russell, and C. A.
Young
[p. 1463]
Novel Fabrication of Ti-Pt-Au/GaAs Schottky Diodes
C. A. St. Jean, W. L. Bishop, Jr., B. K. Sarpong, S. M. Marazita,
and T. W. Crowe
[p. 1465]
Light Dependence of SOI MOSFET with Nonuniform Doping Profile
G. K. Abraham, B. B. Pal, and R. U. Khan
[p. 1469]
SPECIAL SECTION PAPERS
High-Sensitivity Photodetectors with On-Chip Pinhole for Laser
Scanning Microscopy
F. Zappa, M. Ghioni, R. Zappa, and U. Drodofsky
[p. 1472]
Low Temperature Analysis of 0.25 µm T-Gate Strained
Si/Si0.55Ge0.45 N-MODFET's
F. Aniel, N. Zerounian, R. Adde, M. Zeuner, T. Hackbarth, and U.
König
[p. 1477]
Elevated Source/Drain by Sacrificial Selective Epitaxy for High
Performance Deep Submicron CMOS: Process Window versus Complexity
E. Augendre, R. Rooyackers, M. Caymax, E. P. Vandamme, A. De
Keersgieter, C. Perello, M. Van Dievel, S. Pochet, and G. Badenes
[p. 1484]
40% Efficient Thin-Film Surface-Textured Light-Emitting Diodes by
Optimization of Natural Lithography
R. Windisch,B. Dutta, M. Kujik, A. Knobloch, S. Meinlschmidt, S.
Schoberth, P. Kiesel, G. Borghs, G. H. Döhler, and P. Heremans
[p. 1492]
A Cost Effective Embedded DRAM Integration for High Density Memory
and High Performance Logic Using 0.15 µm Technology Node and
Beyond
D. Ha, D. Shin, G.-H. Koh, J. Lee, S. Lee, Y.-S. Ahn, H. Jeong, T.
Chung, and K. Kim
[p. 1499]
A 0.13 µm Poly-SiGe Gate CMOS Technology for Low-Voltage
Mixed-Signal Applications
Y. V. Ponomarev, P. A. Stolk, C. J. J. Dachs, and A. H. Montree
[p. 1507]
The Influence of Elevated Temperature on Degradation and Lifetime
Prediction of Thin Silicon-Dioxide Films
B. Kaczer, R. Degraeve, N. Pangon, and G. Groeseneken
[p. 1514]
Fracture Strength and Fatigue of Polysilicon Determined by a Novel
Thermal Actuator
H. Kapels, R. Aigner, and J. Binder
[p. 1522]
Compact Modeling of High-Frequency Distortion in Silicon
Integrated Bipolar Transistors
M. Schröter, D. R. Pehlke, and T.-Y. Lee
[p. 1529]
A Novel Lateral Bipolar Transistor with 67 GHz f{max on Thin-Film
SOI for RF Analog Applications
H. Nii, T. Yamada, K. Inoh, T. Shino, S. Kawanaka, M. Yoshimi, and
Y. Katsumata
[p. 1536]
ANNOUNCEMENTS
2000 IEEE GaAs IC Symposium
[p. 1542]
Call for Papers--IEEE International Conference on Microelectronic
Test Structures, March 2001
[p. 1543]
Preliminary Call for Papers--2000 GaAs REL Workshop, November 2000
[p. 1544]
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