Article : [PAP195]

Titre : A study on the short circuit destruction of IGBTs, ISPSD'93.

Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits

Editors : Williams, R.K., Baliga, B.J. Mitsubishi Electric Corp., Fukuoka, Japan
Stockage : Thierry LEQUEU
Lien : private/Yamashita2.pdf - 366 Ko.
Source : Power Semiconductor Devices and ICs, 1993. ISPSD '93., Proceedings of the 5th International Symposium on
Pages : 35 - 40
Date : 18-20 May 1993
ISBN : 0-7803-1313-5
Info : Total Pages : xviii+324
References : 4
Accession_Number : 4705910

Abstract :
The short-circuit destruction of class n-ch 600-V IGBTs
(insulated-gate bipolar transistors) is investigated
experimentally and analyzed with the help of device simulation,
focusing on three major destruction modes (power constant, energy
constant, and turn-off destruction). Measured power dissipation
for power constant destruction is 2000 approximately 2400
kW/cm/sup 2/, which coincides with the simulation result. The
energy constant destruction and turn-off destruction are found to
depend on the thermal effect. The critical temperature for
destruction is predicted to be 350 degrees C.

Subject_terms :
IGBT; power transistor; short circuit destruction; device
simulation; destruction modes; turn-off destruction; power
dissipation; power constant destruction; energy constant
destruction; thermal effect; critical temperature for
destruction; 350 C; 600 V; insulated gate bipolar transistors;
power transistors; semiconductor device models; short-circuit
currents

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