A.R. HEFNER, "An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)", IEEE Transactions on Power Electronics, Vol. 6, No. 2, April 1991, pp. 208-219.

A.R. HEFNER, "An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT)", IEEE Transactions on Power Electronics, Vol. 6, No. 2, April 1991, pp. 208-219. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP042]

Titre : A.R. HEFNER, An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT), IEEE Transactions on Power Electronics, Vol. 6, No. 2, April 1991, pp. 208-219.

Cité dans : [DIV007]  Classement par type de Congrés et de revues IEEE, avril 2003.
Cité dans : [DIV345]  A. MOSKALEV, Accurate analitical considerations on clamped inductive switching transients of MOSFET and IGBT switching stages, juin 2002.

Auteur : Allen R. Hefner, Jr. Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA

Stockage : Thierry LEQUEU (version papier), Librairie Catane.
Source : Power Electronics, IEEE Transactions on
Pages : 208 - 219
Date : April 1991
Volume : 6
Issue : 2
ISSN : 0885-8993
Lien : private/HEFNER.pdf - 963 Ko, 12 pages.

Abstract :
The drive circuit requirements of the insulated gate bipolar transistor (IGBT) are explained with the aid of an analytical
model. It is shown that nonquasi-static effects limit the influence of the drive circuit on the time rate-of-change of
anode voltage. Model results are compared with measured turn-on and turn-off waveforms for different drive, load, and feedback
circuits, and for different IGBT base lifetimes.

Subject_Terms :
driver circuits; insulated gate bipolar transistors; power transistors; semiconductor device models; semiconductor device models; power insulated gate bipolar transistor; IGBT; analytical model; nonquasi-static effects; anode voltage; turn-on; turn-off; load; feedback; base lifetimes
semiconductor device models; power insulated gate bipolar transistor; IGBT; analytical model; nonquasi-static effects; anode voltage; turn-on; turn-off; load; feedback; base lifetimes; driver circuits; insulated gate bipolar transistors; power transistors;
Accession_Number : 3932556
References : 16 Cited

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