Livre : [LIVRE251]

Titre : H. XIAO, Introduction to Semiconductor Manufacturing Technology, 1st Edition, 2001, 647 pages.

Auteur : Hong Xiao - Austin Community College

Stockage : Bibliothèque LMP
Fiche : LMP2001-xx
Référence : 2001-xx/LMP
Date_d'achat : 16 mars 2001
Prix_H.T. : 431.93

Date : 2001
Pages : 1 - 647
ISBN : 0-13-022404-9 (Hardback)
Info : http://www.awl-he.com/titles/0130224049.html

For courses in Semiconductor Manufacturing Technology, IC Fabrication Technology, and Devices: Conventional Flow.

This up-to-date text on semiconductor manufacturing processes takes into consideration the rapid development of the industry's technology. It
thoroughly describes the complicated and new IC chip fabrication processes in detail with minimum mathematics, physics, and chemistry.
Advanced technologies are covered along with older ones to assist students in understanding the development processes from a historical point
of view.

Device physics.
- Helps students relate IC processing to IC device requirement.
Complete integration of IC process.
- Enables students to understand the relationship between the different IC process steps.
The history of IC technology development.
- Gives students an understanding of advanced technology from a historical viewpoint.
An entire chapter on basic knowledge of plasma
Describes the science and technology related to plasma used in semiconductor processing.
A chapter on CMP (Chemical Mechanical Polishing)
Describes the latest technology used in IC fabrication.
- Supplies students with up-to-date processing information in a field that introduces new technology on an almost daily basis.
Copper metallization and low-k dielectric.
- Shows students the latest interconnection techniques used in IC manufacturing.

1. Introduction.
2. Introduction of IC Fabrication.
3. Semiconductor Basics.
4. Wafer Manufacturing.
5. Thermal Processes.
6. Photolithography.
7. Plasma Basics.
8. Ion Implantation.
9. Etch.
10. CVD and Dielectric Thin Film.
11. Metallization.
12. CMP.
13. Process Integration.
14. CMOS Processes.

PREFACE :

The semiconductor industry is developing rapidly with new technology introduced almost on a daily basis. The device feature size is shrinking
continuously and the number of transistors on an integrated circuit (IC) chip is increasing rapidly, as predicted by Moores law. Compared with only
a decade ago, IC fabrication processing technology has become more complicated.

This book thoroughly describes the complicated IC chip manufacturing processes in a semiconductor fab, using minimum mathematics, chemistry,
and physics. It covers the advanced technologies while keeping the contents simple and easy to understand for readers without science and
engineering degrees. It focuses on the newest IC fabrication technologies and describes the older technologies to provide better understanding of
the historical development. The processes chosen for the book are very close to those in real fabs, especially on process troubleshooting and
process and hardware relations.

This book is intended for technical and college students who need an in-depth understanding of the technology as they prepare to find a job in the
field. It is also intended as a reference book for engineering students and to provide a more realistic picture of the semiconductor industry. Industry
operators, technicians, engineers, and personnel in sales, marketing, administration, and management can also benefit. This book can help them to
learn more about their jobs, improve their troubleshooting and problem-solving skills, and raise their career development potential.

Chapter 1 briefly reviews the history of the semiconductor industry and describes semiconductor manufacturing processes. Chapter 2 introduces
basic semiconductor fabrication including yield, cleanroom, semiconductor fab, and IC chip test and packaging. Chapter 3 gives a brief review of
fabrication semiconductor devices, IC chips, and early technologies in semiconductor processing. Crystal structure, singles, crystal silicon wafer
manufacturing, and epitaxial silicon growth are described in Chapter 4. Chapter 5 lists and discusses thermal processes, including oxidation,
diffusion, annealing, alloying, and reflow processes. Rapid thermal processes (RTP) and conventional furnace thermal processes are discussed.
Chapter 6 details the photolithography process. Fundamentals of plasmas used in semiconductor processing are covered in Chapter 7; it introduces
plasma applications, DC bias, and plasma-process relations. Chapter 8 discusses the ion implantation process. Chapter 9 gives a detailed
description of etch processes including wet and dry etches; chemical, reactive ion etch (RIE), and physical etches; and patterned and blanket etch
processes. Basic chemical vapor deposition (CVD) and dielectric thin-film deposition processes, including dielectric CVD processes, process
trends, troubleshooting, and future trends are discussed in detail in Chapter 10. Chapter 11 covers metallization, metal CVD, and physical vapor
deposition (PVD) processes. It also describes the copper metallization process. Planarization processes including chemical mechanical polishing
(CMP) are discussed in Chapter 12. Chapter 13 discusses process integration. Chapter 14 diagrams CMOS process flows including an advanced
CMOS process flow with copper and low-k interconnection. Chapter 15 predicts the future development of the semiconductor industry.

Many people helped me to write this book. I especially appreciate the useful information provided by my current and former colleagues: Lou
Frenzel, Thomas E. Thompson, Ole Krogh, Tony Shi, Alberto Quinonez, Lance Kinney, Scott Bolton, and Steve Reedy. Many of my students
helped me by proofreading end improving the book. I especially express my thanks to Wayne Parent, Jeffrey Carroll, Boyd Woods, and Ronald
Tabery.

I would also like to thank the following reviewers for their valuable suggestions: Professor Dave Hata, Portland Community College; Professor Fred
Lavender, Albuquerque Technical Institute; Professor Gene Stouder, Southwest Texas State University; Professor Bassam Matar, Glendale
Community College; Professor Carlo Sapijaszko, DeVry Institute of Technology; Professor George Shaiffer, Pikes Peak Community College;
Professor Val Shires, Gwinnett Technical Institute; and Professor Devinder Sud, DeVry Institute.

Hong Xiao

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