W. R. RUNYAN, T. J. SHAFFNER, "Semiconductor Measurements and Instrumentation, Second Edition", McGraw-Hill, january 1998, 454 pages.

W. R. RUNYAN, T. J. SHAFFNER, "Semiconductor Measurements and Instrumentation, Second Edition", McGraw-Hill, january 1998, 454 pages. Copyright - [Précédente] [Première page] [Suivante] - Home

Fiche : [LIVRE187]

Titre : W. R. RUNYAN, T. J. SHAFFNER, Semiconductor Measurements and Instrumentation, Second Edition, McGraw-Hill, january 1998, 454 pages.

Auteur : W. R. Runyan
Auteur : T. J. Shaffner

Hard : 0-07-057697-1
Date : Jan 1998
Price : $70.00US
Pages : 0 454 p.
Info : 199 Illus. 6 x 9, Electronics, McGraw-Hill - Search Catalog/Order
Subjects : Engineering, Electrical and Electronic Engineering, Semiconductor and Solid-State Electronics

Absract :
The definitive reference on semiconductor characterization tools!
Semiconductor Measurements & Instrumentation, Second Edition. This fully
updated edition of the classic reference incorporates all the new
approaches and tools for semiconductor material characterization that have
been developed to accomodate ever-shrinking semiconductor geometries.
Here, in one well-organized volume, are detialed explanations of the
advanced techniques for evaluating virtually every criterion: crystal
defects, impurity concentration, lifetime, film thickness, resistivity,
and such critical electrical properties as mobility, Hall effect, and
conductivity type. Reliable, high-accuracy methods of measuring hardness,
stress, and various kinds of surface contamination are also included. In
addition to its value as a practical everyday reference, the text also
serves as an excellent user's guide to the latest methods of optical
microscopy, scanning electron microscopy (SEM), electron microprobe
analysis, transmission electron microscopy (TEM), Auger electron
spectroscopy (AES), scanning probe microscopy (SPM), and secondary ion
mass spectrometry (SIMS). As the only guide that offers such "dual
coverage" of its topic--in terms of both measurements and tools--and this
timely and thorough reference is sure to be of considerable ongoing
benefit to solid state and semiconductor engineers.

Crystal Orientation.
Crystal Defects.
Impurity Concentration.
Resistivity, Sheet Resistance, and Contact Resistance.
Mobility, Conductivity Type, and Ahll Effect.
Carrier Lifetime.
Film Thickness.
Wafer-Oriented Measurements.
Optical Microscopy.
Scanning Electron Microscopy.
Electron Probe Microanalysis.
Transmission Electron Microscopy.
Auger Electron Spectroscopy.
Scanning Probe Microscopy.
Secondary ion Mass Spectrometry.
Appendix 1: Safety Precautions.
Appendix 2: Measurement Related Acronyms and Abbreviations.
Appendix 3: Conversion Tables.
Appendix 4: Analytical Instrument Comparison and Capability.
Subject Index.
Name Index.

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