JOURNAL DE PHYSIQUE III, Vol.7, December 1997

CONTENTS

Last Issue before Becoming The European Physical Journal

Editorial

125 ans du Journal de physique.
J. FRIEDEL WITH THE COLLABORATION OF P. RADVANYI

The European Physical Journal pour l'avenir.
B. CAGNAC

Staff Currently Working on the Journal de Physique

Extended Defects in Semiconductors (Second Part )

Trapping and Recombination Properties Due to Trap Clustering.
A. MANDOWSKI AND J. Światek

Dislocation and Grain Boundary Energies in Si and Ge from an Anharmonic Bond Charge Model.
H. TEICHLER AND J. WILDER

Dislocation-Point Defect Interaction Effect on Local Electrical Properties of Semiconductors.
E.B. YAKIMOV

Heteroepitaxy of Cubic GaN.
A. TRAMPERT, O. BRANDT, H. YANG AND K.H. PLOOG

Microstructure of Pyramidal Defects in InSb Layers Grown by Atomic Layer Molecular Beam Epitaxy on InP Substrates.
J.C. FERRER, F. PEIRÓ, A. CORNET, J.R. MORANTE, T. UTZMEIER AND F. BRIONES

TEM Imaging of Dislocation Kinks, their Motion and Pinning.
J.C.H. SPENCE, H.R. KOLAR AND H. ALEXANDER

Analysis of Large Impurity Atmospheres at Dislocations and Associated Point Defect Reactions in Differently n-Doped GaAs Crystals.
C. FRIGERI, J.L. WEYHER, J. JIMÉNEZ AND P. MARTÍN

Thermal Behaviour of Deep Levels at Dislocations in n-Type Silicon.
D. CAVALCOLI, A. CAVALLINI AND E. GOMBIA

Mechanical Strength and Dislocation Velocities in GeSi Alloys.
I. YONENAGA AND K. SUMINO

Strain Measurements in Thin Film Structures by Convergent Beam Electron Diffraction.
A. ARMIGLIATO, R. BALBONI, A. BENEDETTI, S. FRABBONI, A. TIXIER AND J. VANHELLEMONT

Regular Papers

Materials Science

Transport Properties of a High Superconducting Single Crystal with Columnar Defects (text in french). F. WARMONT, S. HéBERT, V. HARDY, C. MARTIN, C. SIMON AND J. PROVOST

Microstructures and Mechanical Properties of NiAl-(Cr) and TiAl-(Cr) Intermetallic Alloys.
G. FROMMEYER AND C. DERDER

Theoretical Study and Design of Artificial Bianisotropic Materials (text in french).
F. AUZANNEAU AND R.W. ZIOLKOWSKI

Physics of Electronic Devices

Methods Based on Finite Elements for the Computation of Electric and Magnetic Fields in Electroencephalography and Magnetoencephalography (text in french).
C. GU´ERIN, G. MARIN, L. GARNERO AND G. MEUNIER

Physics of Energy Transfers

Active Filtering of Mains Current and Voltage Harmonics: Modelling, Numerical Simulation and Experimentation (text in french).
C. LOTT, O. LAPIERRE, H. POULIQUEN AND S. SAADATE

Lasers and Optics

Optical Characterization of the Director Field in a Distorted Nematic Layer.
E. PLAUT, A. JOETS AND R. RIBOTTA

Erratum

Measurement of Atomic Fractions in Multi-Phased Materials of Limited Mass via an Empirical Approach to EXAFS Modeling.
V.G. HARRIS, S.A. OLIVER, J.D. AYERS AND B.N. DAS