JOURNAL DE PHYSIQUE III, vol 5, May 1995

CONTENTS

Microelectronics and Optoelectronics III-V(5)

Dry etching of InP in Helicon HBr plasma. Morphology and characterization of surface damage.(Text in French).

J. ETRILLARD, P. OSSART, G. PATRIARCHE and J.M. FRANCOU

Study of the effect of deposition or annealing temperature on the Au/GaSb(100) interface formation by low energy electron diffraction and Auger or electron loss spectroscopies.(Text in French).

M. ROUANET, W. OUEINI, M.NOUAOURA, N.BERTRU, J. BONNET and L. LASSABATERE

Determination of PHEM's microwave noise parameters only by means of the small-signal equivalent circuit and experimental comparisons.

D. GASQUET, F. BARBEROUSSE, M. DE MURCIA, W. DE RAEDT and C. CLAEYS

LF excess noise analysis of AlGaAs/GaAs and AlGaAs/InGaAs/GaAs HEMTs.

N. SAYSSET, C. MANEUX, N. LABAT, A. TOUBOUL, Y. DANTO and J.M. DUMAS

Analysis of white optical and electrical noises of a DBF laser with optical feedback. (Text in French).

P. SIGNORET, B. ORSAL, J.M. PERANSIN and R. ALABEDRA

Use of multi-electrode lasers as microwave mixers. (Text in French)

R. HAMELIN, J.P. VILCOT, J.P. GOUY, D. DECOSTER, C. CARRIERE, B. GROUSSIN and V. CARGEMEL

Regular Papers

Materials Science

Some observations of the lamellar morphology in isostatic prolypropylene spherulites by SFM.

G. CASTELEIN, G. COULON, M. ABOULFARAJ, C. G'SELL and E. LEPLEUX

Physico-chemical and structural study of very thin silicon nitride and oxynitride formed by rapid thermal treatment. (Text en French).

R. SAOUDI, G. HOLLINGER, A. GAGNAIRE, M.PITAVAL and P. MOLLE

Determination of low-energy ion implantation damage parameters by an ellipsometric method.

U. MÜLLER-JAHREIS, P. THIELE, M. BOUAFIA and A. SEGHIR

Instrumentation