Workshop
Tuesday, June 5 14:00-17:30
(5F Multi purpose hall & 10 1008-9)
ISPSD'01 Workshop "Technology
Roadmap of Power Devices/ICs"
The workshop consists of four workshop group panel discussions in parallel, covering the distinguished fields of power devices/ICs and their applications. The discussions will start from the technology roadmap, established at ISPSD'96 Hawaii, which can be downloaded in pdf-format in this page.
Click here to get roadmap at ISPSD96 Hawaii !!!
See attached file: Hawaii-Roadmap.pdf
(Acrobat Reader Ver.4 file)
Workshop Group 1 "High Power Devices"
Chairperson: Hansruedi Zeller, ABB
Vice-chairperson: Hideo Matsuda, Toshiba
This workshop will start from the device roadmap laid out at
ISPSD'96 in Maui, Hawaii. The purpose is to review and refresh the roadmap for
high power bipolar devices, IGBT's and other MOS controlled devices and extend
it for another 5 year period.
Panelists will present the system requirements in major application areas such
as power transmission and distribution, industrial motor drives, traction and
electrical vehicles. This will then be translated into device requirements in
terms of electric and thermal properties, packaging, standardization vs.
integration, reliability and robustness.
Workshop Group 2 "Discrete devices"
Chairperson: Leo Lorenz, Infineon
Vice-chairperson: Mutsuhiro Mori, Hitachi
The main focus in this workshop is a discussion about the
future technologies (Si & SiC based materials), device concepts and
packaging ideas on discrete devices. For power MOSFETs the future concepts might
be very different between the ultra low voltage (VBr << 20 V) devices; the
low voltage (VBr < 80 V) devices and high voltage (VBr > 300 V) devices.
The main technology drives in the low voltage devices are the car applications
and the DC/DC converters. In the high voltage and the CoolMOS concept will compete to the conventional power MOSFET structure and the fast switching IGBTs.
The fast switching diode is still a drawback in many applications. In this
meeting future diode concepts including SiC diodes will be discussed. In many
applications the power density is increasing drastically which raises up new
ideas on chip contacting technologies. The opening of this session will be done
by short statements of experts on different devices followed by the group
discussion. The outcome will be roadmaps of future device concepts/ideas in this very high volume market.
Workshop Group 3 "Integrated Power Devices"
Chairperson: Ayman Shibib, Agere Systems
Vice-chairperson: Hisao Shigekane, Fuji Electric
The focus of the Integrated Power Devices workshop is to
address the issues relating to the system integration at the chip, package and
module levels. At the chip or power IC level: process technologies, materials
(including SOI) and devices will be considered from the perspective of current
versus future need and capabilities.
Similarly, an alternative to the system-on-chip, namely system-in-package or
integrated module approach will be discussed.
The session will start with a review of the summary of the Power ICs Group
report of ISPSD'96 Hawaii workshop, panel members' presentations followed by
open discussions with audience participation. The goal of the session is to
establish the basis of a technology roadmap of integrated power devices for the next 5
years.
Workshop Group 4 "RF power devices"
Chairperson: Colin Warwick, Agere Systems
Vice-chairperson: Isao Yoshida, Hitachi
A panel of international experts will lead "Gr.4. RF power devices workshop". The goal is to formulate a technology roadmap for RF power devices, including Si LDMOS, GaAs HBT, HEMT, MESFET, GaN & SiC devices for the next five years. The experts come from both industry (semiconductor suppliers and consumers) and academia.
The agenda is:
1. Short presentation by each panel member to inform and challenge the workshop
participants.
2. Open discussion leading to a consensus on where technologies are and where
they will evolve.
The resulting roadmap should be a very valuable planning tool for consumers and producers of RF power semiconductor devices.