Wednesday, June 6, 13:40-15:45, 5F Main Hall

Chairperson: M. Briere, Cherry Semiconductor

                    H. Kitaguchi, Oki Electric Industry Co.,

8.1   Avalanche-Induced Thermal Instability in LDMOS Transistors

        P.L. Hower, C.-Y. Tsai, S. Pendharkar, E. Efland, R. Steinhoff and J. Brodsky

8.2   Robustness of LDMOS Power Transistors in SOI-BCD Processes and Derivation of Design Rules Using Thermal Simulation

        B.H. Krabbenborg and J.A. van der Pol

8.3   Using Two-Dimensional Filament Modeling to Predict LDMOS and SCRLDMOS Behavior under High Current ESD Conditions

        S. Pendharkar and P. Hower

8.4   Improvement of Breakdown Characteristics of LDMOSFETs with Uneven Racetrack Sources for PDP Driver Applications

        T.M. Roh, D.W. Lee, J. Kim, J.G. Koo and K.-I. Cho

8.5   0.6μm BiCMOS Based 15 and 25V LDMOS for Analog Applications

        Y. Kawaguchi, K. Nakamura, k. Karouji, K. Watanabe, Y. Yamaguchi and A. Nakagawa