Session 6: High Voltage Devices
Wednesday, June 6, 8:30-10:35, 5F Main Hall
Chairperson: P. Taylor, Dynex Semiconductor
M. Okamura, JAIST
6.1 A Study on Wide RBSOA of 4.5kV Power Pack IGBT
K. Yoshikawa, T. Koga, T. Fujii, A. Nishiura and Y. Takahashi*
Fuji Electric R&D and *Fuji Electric, Japan
6.2 6.5kV-Modules Using IGBTs with Field Stop Technology
J.G. Bauer, F. Auerbach, A. Porst, R. Roth*, H. Ruthing and O. Schilling**
Infineon Technologies, *Infineon Technologies OHG and **Eupec, Germany
6.3 Characterization of a Bi-Directional Double-Side, Double-Gate IGBT Fabricated by Wafer Bonding
K.D. Hobart, F.J. Kub, M. Ancona, J.M. Neilson*, K. Brandmier** and P.R. Waind***
Naval Research Laboratory, *JMSN, **Silicon Power, U.S.A. and ***Dynex Semiconductor, U.K.
6.4 Ultra-High Voltage Device Termination Using the 3D RESURF (Super-Junction) Concept - Experimental Demonstration at 6.5 kV
F. Udrea, T. Trajkovic, J. Thomson*, L. Coulbeck*, P.R. Waind*, G.A.J. Amaratunga and P. Taylor*
Univ. of Cambridge and *Dynex Semiconductor, U.K.
6.5 6kV 5kA RCGCT with Advanced Gate Drive Unit
H. Gruening, T. Tsuchiya, K. Satoh, Y, Yamaguchi*, F. Mizohata and K. Takao
Mitsubishi Electric and *Fukuryo Semicon Engineering, Japan