Tuesday, June 5, 10:45-12:20, 5F Main Hall

Chairperson: C.A.T. Salama, Univ. of Toronto

                    T. Yachi, NTT

5.1   A High-efficiency 5-GHz-band SOI Power MOSFET Having a Self-aligned Drain Offset Structure

        S. Matsumoto, Y. Hiraoka and T. Sakai

        J. Cai, C. Ren, N. Balasubramanian and J.K.O. Sin*

        Institute of Microelectronics, Singapore and *Hong Kong Univ. of Science and Technol., China

5.3   High Power LDMOS for Cellular Base Station Applications

        M. Shindo, M. Morikawa, T. Fujioka, K. Nagura, K. Kurotani, K. Odaira, T. Uchiyama* and I. Yoshida

5.4   A High Efficiency High Power GaAs Push-Pull FET for W-CDMA Base Stations

        K. Inoue, K. Ebihara, H. Haematsu, F. Yamaki, T. Igarashi, H. Takahashi and J. Fukaya