Session 2: SiC Devices II
Monday, June 4, 14:00-15:15, 5F Main Hall
Chairperson: H. Lendenmann, ABB Research
K. Hara, DENSO
2.1 1.8 kV, 3.8A Bipolar Junction Transistors in 4H-SiC
S.-H. Ryu, A.K. Agarwal, J.W. Palmour and M.E. Levinshtein*
Cree, U.S.A. and *Ioffe Institute of Russian Academy of Science, Russia
2.2 Static and Dynamic Characteristics of 4-6 kV SIAFETs
D. Takayama, Y. Sugawara, T. Hayashi, R. Singh*, J. Palmour*, S. Ryu* and K. Asano
Kansai Electric Power, Japan and *Cree, U.S.A.
2.3 High Temperature Characteristics of 5 kV, 20 A 4H-SiC PiN Rectifiers
R. Singh, A. Hefner, Jr.*, D. Berning* and J. Palmour
Cree and *NIST, U.S.A.