Session 11: IGBTs I

　

Thursday, June 7, 10:50-12:05, 10F Room 1001-3

Chairperson: M.-K. Han, Seoul National Univ.

                    Y. Seki, Fuji Electric

　

11.1   600V-IGBT with Reverse Blocking Capability

          M. Takei, Y. Harada and K. Ueno

          Fuji Electric R&D, Japan

11.2   Novel 600V Trench High-Conductivity IGBT (Trench HiGT) with Short Circuit Capability

          K. Oyama, Y. Kohno, J. Sakano, K. Ishizaka, D. Kawase and M. Mori

          Hitachi, Japan

11.3   The 5th Generation Highly Rugged Planar IGBT Using Sub-Micron Process Technology

          J. Yamashita, C. Yoshida, C. Fujii, K. Takanashi and J. Moritani

         Mitsubishi Electric, Japan