Session 1: SiC Devices I
Monday, June 4, 11:25-12:40, 5F Main Hall
Chairperson: P. Chow, Renesseler Polytechnic Inst.
H. Matsunami, Kyoto Univ.
1.1 5.5kV Normally-Off Low RonS 4H-SiC SEJFET
K. Asano, Y. Sugawara, S. Ryu*, R. Singh*, J. Palmour*, T. Hayashi and D. Takayama
Kansai Electric Power, Japan and *Cree, U.S.A.
1.2 12-19kV 4H-SiC pin Diode with Low Power Loss
Y. Sugawara, D. Takayama, K. Asano, R. Singh*, J. Palmour* and T. Hayashi
Kansai Electric Power, Japan and *Cree, U.S.A.
1.3 4.5kV 4H-SiC Diodes with Ideal Forward Characteristic
H. Lendenmann, A. Mukhidtinov, F. Dahlquist, H. Bleichner, P.A. Nilsson, R. Soderholm and P. Skytt
ABB Research, Sweden