First Call for Papers

The 13th International Symposium on
Power Semiconductor Devices & ICs

ISPSD '01

June 4-7, 2001,
OSAKA  JAPAN

Sponsor : The Institute of Electrical Engineers of Japan
Co-Sponsor : IEEE Electron Device Society

 

The 13th International Symposium on Power Semiconductor Devices & ICs
(ISPSD'01) provides a forum for technical discussion in all areas of power
semiconductor devices and power ICs and their applications. Areas of
interest include, but are not restricted to the following:


Materials and Processes :Crystal Growth, Doping, Lifetime Control, Passivation,
 Characterization, Si, GaAs, SiC, Diamond.
CAD/Simulation :Device, Process & Circuit Simulation, Layout, Verification
Tools.
Devices

:Device Physics, Modeling, Fast Switching Devices,
High Power Devices, Intelligent Devices, Pulse Power
Devices,GHz Power Devices, Characterization.

High Voltage/Power ICs :Isolation Techniques, SOI, Circuit Design, Device
Technology, Monolithic vs. Hybrid.
Modules and Packaging

:Novel Packaging Techniques, Stress and Thermal
Simulation, Thermal Management, High Voltage and
Power Dissipation Issues.

Applications,
Measurements and
Reliability

:Automotive Electronics, Telecommunications,
Display Drives, Power Systems, Power Supplies,
EV, Traction, Elevator, Motor Controls, Power
Management, Battery, Wind-and Solar-Systems,
Power Factor Correction, EMC.

 

PAPER SUBMISSION

Prospective authors must submit 40 copies of a 500 word summary on A4 size paper in English
with one page supporting materials, headed by title of the paper, author's names, affiliations,
mailing address, phone number, FAX number and e-mail address to the Technical Program
Chairman: Hideo Iwamoto.
DEAD LINE FOR SUBMISSION OF SUMMARY is OCTOBER 15, 2000. Notices of acceptance will
be sent to authors by December 20, 2000. The final manuscript, in English, will be required for
the Proceedings no later than February 28, 2001.

All questions or inquiries for further information regarding this symposium should be directed to
the General Chairman: Yoshitaka Sugawara.



General Chairman Technical Program Chairman
Dr. Yoshitaka Sugawara
Technical Research Center
The Kansai Electric Power Company, Inc. 11-20 Nakoji, 3-chome, Amagasaki, Hyogo,
661-0974 Japan
Phone: +81-6-6494-9736
FAX : +81-6-6494-9728
e-mail: K467331@kepco.co.jp
  Dr. Hideo Iwamoto
Power Semiconductor Device Division
Mitsubishi Electric Corporation
1-1-1 Imajukuhigashi, Nishi-ku, Fukuoka
819-0192 Japan
Phone: +81-92-805-3390
FAX : +81-92-805-3742
e-mail: iwamotoh@mail.oka.melco.co.jp

 

Source: OSAKA CONVENTION BUREAU