E. T. Ogawa
Texas Instruments, Inc.

Dallas, TX USA

Electromigration (EM) has been a major interconnect reliability concern from the early days of integrated circuit technology. This tutorial will describe EM in the context of Al-based technology and lead into present day concerns and new techniques about assessing interconnect reliability, especially in the case of Cu dual-damascene interconnects. Some topics to be discussed will include the Blech effect, mass transport pathways, and early failure.