New Phenomena in the Device Reliability Physics of Advanced Submicron CMOS Technologies

G. La Rosa, S. Rauch, and F. Guarin, IBM

Microelectronics, Hopewell Junction, NY

This tutorial will give an overview of some of the new reliability phenomena observed in MOSFET devices of advanced submicron CMOS technologies and their impact to reliability lifetime projections. Some focus will be given to Hot Carrier Reliability Phenomena such as e-e scattering, secondary impact ionization as well as parasitic drain series resistance effects in NMOSFET as well as hot hole damage in PMOSFET devices. In addition the role of Negative Bias Temperature Instabilites (NBTI) as technology limiter in the design of PMOSFET submicron devices will be discussed. The impact of these phenomena to DC and AC based circuit lifetime projections as well as methodologies will be given.