Characterization, Physical Modeling and Assessment of Gate Oxide Reliability

An overview of past and present oxide reliability characterization techniques and degradation physics will be presented. This overview will provide a background in the physics, statistics, models, and characterization methodologies necessary for understanding the reliability issues present in current technology ultra-thin gate oxides.

Eric M. Vogel

Eric M. Vogel received the B.S. (1994) in electrical engineering with honors from the Pennsylvania State University, University Park. He received the Ph.D. (1998) in electrical engineering from North Carolina State University with a thesis on RTCVD oxynitride gate dielectrics. In June 1998, he joined the Semiconductor Electronics Division of the National Institute of Standards and Technology working in the areas of device electrical characterization, gate dielectric reliability and thin film metrology for CMOS and beyond devices. He recently became the group leader of the Advanced Microelectronics Technology group that conducts research related to the measurement and standards infrastructure for current and future microelectronic devices and constituent thin films.