ESSDERC 2001

31st European Solid-State Device Research Conference
11 – 13 September 2001
Nuremberg, Germany

 

organised by:

 

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and with

Technical Co-Sponsorship of

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Paper Deadline:
6 April 2001


General Scope
Schedule
Papers
Format of Papers
Further Information
Conference Organisation


General Scope of the Conference (Return to TOC)

The aim of the ESSCIRC series of conferences is to provide an annual European forum for the presentation and discussion of recent advances in solid-state circuits. These conferences are co-ordinated with ESSDERC which deals with solid-state physics, technology and devices.
ESSDERC/ESSCIRC are co-ordinated by a common Steering Committee. For further information contact:

Prof. E. A. Vittoz
CSEM
Jaquet Droz 1
CH - 2007 Neuchâtel, Switzerland
Phone: +41 32 7205 111 / 225
Fax: +41 32 7205 763
E-mail: eric.vittoz@csem.ch

The main themes for ESSDERC 2001 are:

CMOS Devices and Reliability
Deep submicron scaling issues, device physics, performance of MOS structures, SOI device issues, low and high temperature operation, hot carrier effects, gate dielectric relaibility, ESD, process induced damage, EMI, noise, electrical characterisation techniques.

Compound Semiconductors and Quantum Electronics
HBT's, LED's, lasers, modulators, photodetectors, microwave devices, quantum devices, single electron and ballistic effects, optoelectronic materials and integration, nanoelectronics, molecular devices.

Sensors, Actuators and Displays
Active displays, display device technologies, field emission devices, polycrystalline TFTs, CCD, CMOS imagers, radiation sensors, infra-red sensors, physical sensors and actuators (pressure, temperature, acceleration, etc.), microfluidics, uTAS, biochemical sensors and array technology, IC, sensor and microsystems packaging issues.

Interconnect Technology and Packaging
Interconnect technology, conductor systems, low-k interlevel dielectrics, planarisation, systems for multi-level interconnects, optical interconnect, interconnect reliability (electromigration, stress migration), multichip modules, integrated passives for RF, e.g. inductors, RF MEMS, high Q components, transformers.

Process and Device Modelling and Simulation
2D and 3D silicon and compound semiconductor process and device modelling, equipment modelling, modelling of isolation, interconnects, physical device models, yield models, parameter extraction, mixed electrical-thermal modelling and simulation.

Silicon Devices
Bipolar devices, low voltage/low power devices, single electron devices, SiGe devices, quantum and ballistic effect, low temperature operation, novel devices and principles of operation.

Silicon Integrated Technology and Manufacturing
Advances in integration for ULSI, bipolar, SOI, memory (dynamic, static, NV, novel types), ASICs, MPU, multi-function Ics, low voltage, low power, analogue, digital, mixed signal, RF, patterning techniques, shallow junctions, RTP, isolation, silicidation, thin dielectrics, high epsilon and novel materials, cleaning issues, physical and structural characterisation, surface preparation, module optimisation, defect control, equipment issues, monitoring, metrology.

Power Devices and Technology
High-voltage devices, mos-controlled power devices, e.g. DMOS, IGBT, smart power devices and ICs, high temperature operation, SiC devices, novel device concepts, low inductance interconnects, reliability of contacts and bonds, cooling issues.

Schedule (Return to TOC)

Mon, 10 Sept. 2001 Short Course, Erlangen
Tue, 11 Sept. 2001 Technical SessionsWelcome Reception
Wed, 12 Sept. 2001 Technical Sessions
Conference Banquet
Thu, 13 Sept. 2000 Technical Sessions
Fri, 14 Sept. 2000 Short Course, Nuremberg

Papers (Return to TOC)

ESSDERC will introduce electronic submission for the 2001 conference. Prospective authors should submit their paper(s) via WWW.
Due to timing constraints associated with the paper review process, papers must be received by 6 April 2001.

After selection of papers, authors will be informed of the decision of the Programme Committee in writing beginning of June 2001.
The preliminary Final Programme will be published on the Internet beginning of June.
The working language for the conference will be English and will be used for all presentations and printed material.

Format of Papers (Return to TOC)

Papers must be submitted in final form to be published in the proceedings. They must not exceed four A4 pages with all illustrations and references included.
The typescript must be produced on a printer having 300 d.p.i. or better resolution. Lower quality printers, such as dot matrix printers are not acceptable since the manuscript will not reproduce legibly.
Manuscript guidelines (MS Word, LaTeX and PDF) as well as instructions how to submit electronically are available on the Internet: http://www.essderc.org/submissions

Conference Organisation (Return to TOC)

Conference Chairman Heiner Ryssel IIS-B,  Univ. Erlangen
Programme Chairman Gerhard Wachutka Munich Univ. of Technology
Local Organising Chairs Peter Pichler
Anton Bauer
Jürgen Lorenz
Lothar Frey
IIS-B
IIS-B
IIS-B
IIS-B
Local Secretary Katja Walz IIS-B
Past Chairman Fank McCabe
Gabriel Crean
Intel
NMRC
Executive Secretary Herbert Grünbacher Carinthia Tech Institute