ESSDERC 2001
31st European Solid-State Device Research
Conference 11 – 13 September 2001 Nuremberg,
Germany |
organised by:
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and with |
Technical Co-Sponsorship of |
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Paper Deadline: 6 April
2001 |
General Scope
Schedule
Papers
Format of
Papers
Further
Information
Conference
Organisation
The aim of the ESSCIRC series of conferences is to provide an annual
European forum for the presentation and discussion of recent advances in
solid-state circuits. These conferences are co-ordinated with ESSDERC which
deals with solid-state physics, technology and devices.
ESSDERC/ESSCIRC are
co-ordinated by a common Steering Committee. For further information
contact:
Prof. E. A. Vittoz
CSEM
Jaquet Droz 1
CH - 2007 Neuchâtel,
Switzerland
Phone: +41 32 7205 111 / 225
Fax: +41 32 7205 763
E-mail:
eric.vittoz@csem.ch
The main themes for ESSDERC 2001 are:
CMOS Devices and
Reliability
Deep submicron scaling issues, device
physics, performance of MOS structures, SOI device issues, low and high
temperature operation, hot carrier effects, gate dielectric relaibility, ESD,
process induced damage, EMI, noise, electrical characterisation
techniques.
Compound Semiconductors and Quantum
Electronics
HBT's, LED's, lasers, modulators,
photodetectors, microwave devices, quantum devices, single electron and
ballistic effects, optoelectronic materials and integration, nanoelectronics,
molecular devices.
Sensors, Actuators and
Displays
Active displays, display device
technologies, field emission devices, polycrystalline TFTs, CCD, CMOS imagers,
radiation sensors, infra-red sensors, physical sensors and actuators (pressure,
temperature, acceleration, etc.), microfluidics, uTAS, biochemical sensors and
array technology, IC, sensor and microsystems packaging issues.
Interconnect Technology and
Packaging
Interconnect technology, conductor systems,
low-k interlevel dielectrics, planarisation, systems for multi-level
interconnects, optical interconnect, interconnect reliability (electromigration,
stress migration), multichip modules, integrated passives for RF, e.g.
inductors, RF MEMS, high Q components, transformers.
Process and Device Modelling and
Simulation
2D and 3D silicon and compound
semiconductor process and device modelling, equipment modelling, modelling of
isolation, interconnects, physical device models, yield models, parameter
extraction, mixed electrical-thermal modelling and simulation.
Silicon Devices
Bipolar devices, low voltage/low power devices, single electron devices,
SiGe devices, quantum and ballistic effect, low temperature operation, novel
devices and principles of operation.
Silicon Integrated Technology and
Manufacturing
Advances in integration for ULSI,
bipolar, SOI, memory (dynamic, static, NV, novel types), ASICs, MPU,
multi-function Ics, low voltage, low power, analogue, digital, mixed signal, RF,
patterning techniques, shallow junctions, RTP, isolation, silicidation, thin
dielectrics, high epsilon and novel materials, cleaning issues, physical and
structural characterisation, surface preparation, module optimisation, defect
control, equipment issues, monitoring, metrology.
Power Devices and
Technology
High-voltage devices, mos-controlled power
devices, e.g. DMOS, IGBT, smart power devices and ICs, high temperature
operation, SiC devices, novel device concepts, low inductance interconnects,
reliability of contacts and bonds, cooling issues.
Schedule (Return to
TOC)
Mon, 10 Sept. 2001 |
Short Course, Erlangen |
Tue, 11 Sept. 2001 |
Technical SessionsWelcome
Reception |
Wed, 12 Sept. 2001 |
Technical Sessions Conference
Banquet |
Thu, 13 Sept. 2000 |
Technical Sessions |
Fri, 14 Sept. 2000 |
Short Course,
Nuremberg |
Papers (Return to
TOC)
ESSDERC will introduce electronic submission for the 2001
conference. Prospective authors should submit their paper(s) via
WWW.
Due to timing constraints associated with the paper review process,
papers must be received by 6 April 2001.
After selection of papers, authors will be informed of the decision of the
Programme Committee in writing beginning of June 2001.
The preliminary Final
Programme will be published on the Internet beginning of June.
The working
language for the conference will be English and will be used for all
presentations and printed material.
Format of Papers (Return to
TOC)
Papers must be submitted in final form to be published in
the proceedings. They must not exceed four A4 pages with all illustrations and
references included.
The typescript must be produced on a printer having 300
d.p.i. or better resolution. Lower quality printers, such as dot matrix printers
are not acceptable since the manuscript will not reproduce
legibly.
Manuscript guidelines (MS Word, LaTeX and PDF) as well as
instructions how to submit electronically are available on the Internet: http://www.essderc.org/submissions
Conference
Organisation (Return to
TOC)
Conference Chairman |
Heiner Ryssel |
IIS-B, Univ. Erlangen |
Programme Chairman |
Gerhard Wachutka |
Munich Univ. of Technology |
Local Organising Chairs |
Peter Pichler Anton Bauer Jürgen
Lorenz Lothar Frey |
IIS-B IIS-B IIS-B IIS-B |
Local Secretary |
Katja Walz |
IIS-B |
Past Chairman |
Fank McCabe Gabriel Crean |
Intel NMRC |
Executive Secretary |
Herbert Grünbacher |
Carinthia Tech
Institute |