IEE Books

Properties of crystalline silicon Edited by Robert Hull, University of Virginia, USA

CONTENTS

• Foreword by Roger de Keersmaecker
• Introduction by Robert Hull
• Contributing Authors
• Abbreviations

1. MELT GROWTH
(Edited by T. Abe)

• 1.1 - Si melt: density, surface tension and viscosity
  K. Terashima
• 1.2 - Si melt convection in a crucible
  K. Kakimoto
• 1.3 - Si melt growth: segregation of light elements, dopants and heavy metals
  S. Kobayashi
• 1.4 - Si melt growth, oxygen transportation during Czochralski growth
  K. Hoshikawa and X. Huang
• 1.5 - Si melt growth: concentration and diffusivities of vacancies and interstitials
  K. Wada
• 1.6 - Si melt growth: grown-in defects and the simulations of their formation
  A.V. Ammon and E. Dornberger

2. EPITAXIAL GROWTH
(Edited by J.C. Bean)

• 2.1 - c-Si MBE: sources, doping, growth rates, uniformity
  J.C. Bean
• 2.2 - Gas-source MBE of c-Si and related materials
  D.W. Greve
• 2.3 - UHV/CVD and related growth techniques for Si and other materials
  D.W. Greve

3. STRUCTURAL AND MECHANICAL PROPERTIES
(Edited by A. George)

Crystalline structure and elastic properties

• 3.1 - Diamond cubic Si: structure, lattice parameter and density
  Y. Okada
• 3.2 - Elastic constants and moduli of diamond cubic Si
  A. George
• 3.3 - High pressure phases of c-Si
  A. George

Dislocations and mechanical properties

• 3.4 - Core structures and energies of dislocations in Si
  A. George
• 3.5 - Dislocation mobilities in c-Si
  K. Sumino and I. Yonenaga
• 3.6 - Macroscopic mechanical behaviour of Si at high temperature
  H. Siethoff
• 3.7 - Mechanical behaviour of Si at low temperature
  G. Vanderschaeve
• 3.8 - Fracture and the brittle-ductile transition of Si
  S.G. Roberts

4. THERMAL PROPERTIES
(Edited by M.R. Brozel)

• 4.1 - Specific heats of c-Si and molten Si
  H. -Matsuo Kagaya and T. Soma (updated by M.R. Brozel)
• 4.2 - Thermal expansion coefficients of c-Si
  H. -Matsuo Kagaya and T. Soma (updated by M.R. Brozel)
• 4.3 - Melting points of Si
  J.C. Brice (updated by M.R. Brozel)
• 4.4 - Phonon spectrum of c-Si
  M.N.Wybourne (updated by M.R. Brozel)
• 4.5 - Thermal conductivity of c-Si
  M.N. Wybourne (updated by M.R. Brozel)
• 4.6 - Thermal diffusivity of c-Si
  M.N. Wybourne (updated by M.R. Brozel)
• 4.7 - Surface tension of liquid Si
  S.C. Hardy (updated by M.R. Brozel)
• 4.8 - Heat of fusion of Si
  J.C. Brice (updated by M.R. Brozel)

5. SURFACE PROPERTIES AND CLEANING
(Edited by R.J. Nemanich)

• 5.1 - Reconstructions of Si (001), (111) and (110) surfaces
  V. Zielasek, F. Liu and M.G. Lagally
• 5.2 - Structure of clean silicon surfaces: vicinal Si (001) and (111) surfaces
  V. Zielasek, F. Liu and M.G. Lagally
• 5.3 - Electronic structure of c-Si surfaces
  R.I.G. Uhrberg
• 5.4 - Electrical characterisation of c-Si surfaces
  J. Ruzyllo and P. Roman
• 5.5 - Passivation of c-Si surfaces
  Y.J. Chabal
• 5.6 - Wet chemical cleaning and surface preparation of Si
  M.M. Heyns and R.J. Nemanich
• 5.7 - HF vapour cleaning of oxide on Si
  R.J. Carter and R.J. Nemanich
• 5.8 - Plasma and other in situ cleaning approaches to cleaning of c-Si surfaces
  H. Ying, R.J. Carte, G.B. Rayner and R.J. Nemanich

6. STRUCTURAL MODELLING
(Edited by M.Heggie)

• 6.1 - Approximate and parametrised quantum mechanical methods for structural modelling of c-Si
  P. Deak
• 6.2 - Approximate and parametrised quantum mechanical methods for structural modelling of c-Si: the tight binding approximation
  G. Jungnickel
• 6.3 - Electronic structure calculations of oxygen point defects in c-Si
  C.P. Ewels and R. Jones
• 6.4 - Theoretical modelling of minor impurities in c-Si
  A. Mainwood
• 6.5 - c-Si surfaces - review of theoretical studies
  G.P. Srivastava
• 6.6 - Microscopic modelling of grain boundaries and stacking faults in c-Si
  P.D. Bristowe
• 6.7 - Vacancy defects in c-Si: electronic and ioni.c structures
  R.M. Nieminen and M.J. Puska
• 6.8 - Self interstitials in c-Si: structure and migration mechanisms
  J.-L. Mozos and R.M. Nieminen
• 6.9 - Ab initio modelling techniques applied to c-Si
  P.R. Briddon
• 6.10 - Modelling of dislocations in c-Si
  N. Lehto and M.I. Heggie

7. BAND STRUCTURE
(Edited by R. Turton)

• 7.1 - Band structure of c-Si: Overview
  R.J. Turton
• 7.2 - Calculational methods in bulk c-Si
  R.J. Turton
• 7.3 - Spin orbit splitting in bulk c-Si
  B. Schmiedeskamp
• 7.4 - Variation of bandgap with temperature in c-Si
  J. Weber
• 7.5 - Variation of bandgap with doping in bulk Si
  H.S. Bennett and R.J. Turton
• 7.6 - Variation of bandgap with pressure in bulk Si
  R.J. Turton
• 7.7 - Band structure and bandgaps in strained bulk Si
  G. Theodorou
• 7.8 - Effective masses of holes and electrons in c-Si
  D.J. Dunstan

8. ELECTRICAL PROPERTIES
(Edited by S.H. Jones)

• 8.1 - Resistivity and carrier concentrations of doped c-Si, and sheet resistance of ion-implanted bulk Si
  M. Pawlik, D. Schechter and K.H. Nicholas
• 8.2 - Piezoresistance of c-Si
  M.V. Chaparala and B.S. Shivaram
• 8.3 - Electron mobility, diffusion and lifetime in c-Si
  P.J. Mole, J.M. Rorison and J.A. del Alamo
• 8.4 - Hole mobility, diffusion and lifetime in c-Si
  P.J. Mole and J.A. del Alamo
• 8.5 - Carrier ionization: field, temperature and orientation dependence
  J.P.R. David
• 8.6 - Modelling equations and parameters for numerical simulation
  A. Strachan

9. IMPURITIES IN SILICON
(Edited by S.J. Pearton)

• 9.1 - Diffusion of O in c-Si
  B. Pajot
• 9.2 - Segregation coefficient of O in c-Si
  B. Pajot
• 9.3 - Solubility of O in c-Si
  B. Pajot
• 9.4 - O-related IR absorption in c-Si
  B. Pajot
• 9.5 - Precipitation, segregation and IR absorption of O in c-Si
  S.J. Pearton
• 9.6 - Segregation coefficient, solubility and IR absorption of C in c-Si
  S.J. Pearton
• 9.7 - Diffusion of C in c-Si
  K.G. Barraclough and R.C. Newman
• 9.8 - Hydrogen diffusion and solubility in c-Si
  M. Stavola
• 9.9 - Hydrogen containing point defects in c-Si
  M. Stavola
• 9.10 - Solubility and segregation coefficient of N in c-Si
  M. Suezawa
• 9.11 - Solubility and diffusion of transition metals
  W. Schroter and M. Seibt
• 9.12 - Deep levels of metals in c-Si
  W. Schroter and M. Seibt
• 9.13 - Electronic states of chalcogen-related donors in c-Si
  P. Wagner
• 9.14 - Properties of rare-earth doped c-c-Si
  A. Polman and S. Coffer
• 9.15 - Alkali impurities in c-Si
  S.J. Pearton

10. DOPANTS IN SILICON
(Edited by K. Jones)

• 10.1 - Diffusion of Al, Ga, In and Tl in c-Si
  D. de Cogan
• 10.2 - Diffusion of P, As and Sb in c-Si
  P.B. Moynagh, A.A. Brown, P.J. Rosser and Y.M. Haddara
• 10.3 - Boron-interstitial clustering in c-Si
  M.D. Giles
• 10.4 - Solubility of B, Al, Ga, In, Tl, P, As and Sb in c-Si
  D. Nobili and D. de Cogan
• 10.5 - Ion implantation of B and P in c-Si
  D.J. Godfrey

11. DEFECT LEVELS IN SILICON
(Edited by H. Grimmeis)

• 11.1 - Vacancies and interstitials and their interactions with impurities in c-Si
  G.D. Watkins
• 11.2 - Electrical and optical properties of dislocations in c-Si
  E.A. Steinman and E.B. Yakimov
• 11.3 - Shallow thermal donors in c-Si
  C.A.J. Ammerlaan
• 11.4 - Thermal double donors in c-Si
  C.A.J. Ammerlaan
• 11.5 - Double donors and acceptors
  C.A.J. Ammerlaan

12. OPTICAL PROPERTIES
(Edited by D.E. Aspnes)

• 12.1 - Optical properties of c-Si: general aspects
  D.E. Aspnes
• 12.2 - Optical functions of intrinsic c-Si for photon energies up to 7.5 eV: table
  D.E. Aspnes
• 12.3 - Optical functions of intrinsic c-Si for selected photon energies: table
  D.E. Aspnes
• 12.4 - Optical functions of liquid Si
  D.E. Aspnes

13. PHOTOCONDUCTIVITY AND PHOTOGENERATED CARRIERS
(Edited by M. Willander)

• 13.1 - Photoconductivity of c-Si: general remarks
  V. Grivickas, J. Vaitkus and M. Willander
• 13.2 - Photoconductivity spectra of ion implanted c-Si
  M. Willander and B.G. Svensson
• 13.3 - Photoconductivity spectra of electron irradiated c-Si
  M. Willander and J.L. Lindstrom
• 13.4 - Bulk lifetimes of photogenerated carriers in intrinsic c-Si
  V. Grivickas and M. Willander
• 13.5 - Bulk lifetimes of photogenerated carriers in doped and treated c-Si
  V. Grivickas and M. Willander
• 13.6 - Surface recombination velocity for c-Si
  V. Grivickas, J.A. Tellefsen and M. Willander
• 13.7 - Mobility and diffusion of photogenerated carriers in intrinsic c-Si
  V. Grivickas and M. Willander
• 13.8 - Mobility and diffusion of photogenerated carriers in doped and treated c-Si
  V. Grivickas and M. Willander

14. IMPLANTATION/IRRADIATION OF SILICON
(Edited by R. Elliman)

• 14.1 - Ion implantation range theory
  R.E. Brindos, P.H. Keys and K.S. Jones
• 14.2 - Ion implantation into c-Si: basic mechanisms and modelling
  T.D. Rubia and M.-J. Caturla
• 14.3 - Electrical properties of ion implanted and electron irradiated c-Si
  S. Coffa and F. Priolo
• 14.4 - Structure of ion implantation induced defects in c-Si
  K.S. Jones
• 14.5 - Doping ionization energies in c-Si
  P.H. Keys, R.E. Brindos and K.S. Jones

15. GETTERING
(Edited by E.R. Weber)

• 15.1 - Gettering of transition metals in c-Si: gettering in silicon technology
  H. Hieslmair, S.A. McHugo, A.A. Istratov, E.R. Weber
• 15.2 - Gettering of transition metals in c-Si : gettering mechanisms
  H. Hieslmair, S.A. McHugo, A.A. Istratov, E.R. Weber
• 15.3 - Gettering of transition metals in c-Si: gettering techniques
  H. Hieslmair, S.A. McHugo, A.A. Istratov, E.R. Weber
• 15.4 - Gettering of transition metals in c-Si: summary of current state of understanding
  H. Hieslmair, S.A. McHugo, A.A. Istratov, E.R. Weber
• 15.5 - Gettering of transition metals in c-Si: future trends
  H. Hieslmair, S.A. McHugo, A.A. Istratov, E.R. Weber

16. ETCHING
(Edited by K.R. Williams)

• 16.1 - Silicon wet isotropic etch rates
  K.R. Williams
• 16.2 - Silicon wet orientation dependent (anisotropic) etch rates
  K.R. Williams
• 16.3 - Silicon preferential (defect delineation) etch rates
  K.R. Williams
• 16.4 - Silicon plasmaless gas-phase etch rates
  K.R. Williams
• 16.5 - Silicon sputtering and ion milling etch rates
  K.R. Williams
• 16.6 - Silicon chemicalplasma and RIE rates
  K.R. Williams
• 16.7 - Silicon reactive ion beam and ion beam assisted etch rates
  Y.H. Lee and M.R. Polcari
• 16.8 - Silicon laser-assisted etch rates
  Y.H. Lee and M.R. Polcari

17. METAL-SILICON CONTACTS
(Edited by L. Schowalter)

• 17.1 - Recent advances in silicide technologies
  K. Maex
• 17.2 - Epitaxial silicide contacts
  R. Tung

18. SILICON ON INSULATOR TECHNOLOGY
(Edited by S.S. Iyer)

• 18.1 - Overview of SOI
  S.S. Iyer
• 18.2 - Silicon on sapphire
  I. Lagnado and P.R. de la Houssaye
• 18.3 - Physics and chemistry of wafer bonding
  M.K. Weldon and Y.J. Chabal
• 18.4 - Bond, grindback and polish SOI
  K. Mitani
• 18.5 - Bond and etch back SOI
  G. Pfeiffer and S.S. Iyer
• 18.6 - Hydrogen induced exfoliation of c-Si
  M.K. Weldon and Y.J. Chabal
• 18.7 - Diffusion in SOI material
  S.R. Crowder
• 18.8 - SOI with porous Si
  T. Yonehara
• 18.9 - Technology and properties of Simox
  M.J. Anc and D.K. Sadana
• 18.10 - Comparison of properties of available SOI materials
  M.A. Mendicino

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