Properties of crystalline siliconEdited by Robert Hull, University of Virginia, USA |
AAS | atomic absorption spectroscopy |
AB | antibonding |
AC | alternating current |
AFM | atomic force microscopy |
AM | Austin model |
APCVD | atmospheric pressure chemical vapour deposition |
APD | antiphase defect |
APD | antiphase domain (boundary) |
APW | augmented plane wave |
ARPES | angle resolved photoemission spectroscopy |
ASED | atom superposition and electron delocalisation |
BC | bond centred |
BCA | binary collision approximation |
BDT | brittle-to-ductile transition |
BESOI | bond and etchback silicon-on-insulator |
BHS | Bachelet-Hamann-Schlueter |
BOX | buried oxide |
BP | Becke-Perdew |
BPS | Burton Prim Slichter |
BSD | backside damage |
BSF | back surface field |
BSOI | bonded silicon-on-insulator |
BTE | Boltzmann transport |
BZ | Brillouin zone |
CB | conduction band |
CCD | charge coupled device |
CCM | cyclic cluster model |
CI | configuration interaction |
CITS | current-imaging-tunnelling spectroscopy |
CMOS | complementary metal oxide semiconductor |
CMP | chemical mechanical polishing |
CNDO | complete neglect of differential overlap |
CNDO/S | CNDO/spectroscopic |
COP | crystal originated particle |
COS | corona oxide semiconductor |
CPAA | charged particle activation analysis |
CPMD | Car-Parrinello molecular dynamics |
CPU | central processing unit |
C-V | capacitance-voltage |
CVD | chemical vapour deposition |
CW | continuous wave |
CZ | Czochralski |
Cz | Czochralski |
CZN | cerium zinc nitrate |
DAS | dimer adatom stacking fault |
DC | direct current |
DE-AAS | drop etching atomic absorption spectroscopy |
DFT | density functional theory |
DF-TB | density functional based tight binding |
DHL | dislocation half-loop |
DI | de-ionised |
2DLFM | two-dimensional low-frequency motion |
DLTS | deep level transient spectroscopy |
DMC | diffusion Monte Carlo |
2DNG | two-dimensional nucleation and growth |
DO | differential overlap |
DQMC | diffusion quantum Monte Carlo |
DRAM | dynamic random access memory |
DRIE | deep reactive ion etching |
DSPE | double solid phase epitaxy |
DZ | denuded zone |
EBIC | electron-beam-induced current |
ECR | electron cyclotron resonance |
EELS | electron energy loss spectroscopy |
ELID | electrolytic in-process dressing |
ELTRAN RTM | epitaxial layer transfer |
EMA | effective mass approximation |
EMT | effective mass theory |
ENDOR | electron nuclear double resonance |
EOR | end of range |
EPM | empirical pseudopotential model |
EPR | electron paramagnetic resonance |
ESF | extrinsic stacking fault |
ESR | electron spin resonance |
ETB | empirical tight binding |
FCC | face centred cubic |
FD | fully-depleted |
FEOL | front end of line |
FET | field effect transistor |
FFT | fast Fourier transform |
FPD | flow pattern defect |
FRS | forward recoil scattering |
FTIR | Fourier transform infrared |
FWHM | full width at half maximum |
FWHP | full width at half peak |
FZ | floating zone |
GEA | gradient expansion approximation |
GFA | gas fusion analysis |
GGA | generalised gradient approximation |
GOI | gate oxide integrity |
GSMBE | gas-source molecular beam epitaxy |
GTO | Gaussian-type orbital |
GW | approximation to the self energy based on the one-electron Green's function G and screened Coulomb interaction W (Hedlin & Lundquist, 1969) |
HBT | heterojunction bipolar transistor |
HC | high carbon (content) |
HEMT | high electron mobility transistor |
HF | Hartree-Fock |
HFR | Hartree-Fock-Roothaan |
HL | high level |
HNA | hydrofluoric-nitric-acetic |
HREELS | high resolution electron energy loss spectroscopy |
HREM | high resolution electron microscopy |
HRTEM | high resolution transmission electron microscopy |
HSC | Hamann-Schlueter-Chiang |
HTEM | high resolution transmission electron microscopy |
HTS | high temperature sputtering |
HTS | high temperature superconducting |
I | self-interstitial |
IBAS | ion beam assisted sputtering |
IBZ | irreducible Brillouin zone |
IC | integrated circuit |
IIP3 | input-referred third order intercept point |
INDO | intermediate neglect of differential overlap |
IPA | isopropyl alcohol |
IR | infrared |
IRAS | infrared absorption spectroscopy |
ISF | intrinsic stacking fault |
ITOX | internal thermal oxide/oxidation |
I-V | current-voltage |
JFET | junction field effect transistor |
KB | Kleinman-Bylander |
K-K | Kramers-Kronig |
kMC | kinetic Monte Carlo |
KS | Kohn-Sham |
L | longitudinal |
LA | longitudinal acoustic |
LATID | large-angle-tilt implanted drain |
LBIC | laser beam induced current |
LC | low carbon (content) |
LCAO | linear combination of atomic orbitals |
LCGO | linear combination of Gaussian orbitals |
LD | low dose |
LDA | local density approximation |
LDA-PP | local density approximation using pseudopotentials |
LDD | lightly doped drain |
LDF | local density functional |
LED | light emitting diode |
LEED | low energy electron diffraction |
LEEM | low energy electron microscopy |
LET | linear energy transfer |
LHeT | liquid helium temperature |
LL | low level |
LMTO | linear muffin tin orbital |
LNA | low noise amplifier |
LO | local oscillator |
LO | longitudinal optical |
LPCVD | low pressure chemical vapour deposition |
LPVPE | low pressure vapour phase epitaxy |
LRP | limited reaction processing |
LSD | local spin density |
LSDA | local spin density approximation |
LSI | large scale integration |
LST | light scattering tomography |
LTO | low temperature oxide |
LVM | local vibrational mode |
MBA | molecular beam allotaxy |
MBE | molecular beam epitaxy |
MC | Monte Carlo |
MCM | molecular cluster model |
MCZ | magnetic field-applied Czochralski |
MD | molecular dynamics |
MEMS | micro electromechanical systems |
MESFET | metal-semiconductor field effect transistor |
MFD | multiple stacking fault defect |
MIM | metal insulator metal |
MINDO | modified INDO |
MIR | multiple internal reflection |
MIT | multiple internal transmission |
MIT-IR | multiple internal transmission infrared |
ML | monolayer |
MLDA | modified local density approximation |
MNDO | modified NDDO |
MODFET | modulation doped field effect transistor |
MOS | metal oxide semiconductor |
MOSFET | metal oxide semiconductor field effect transistor |
MP | Monkhorst and Pack |
M-S | metal-semiconductor |
MS | molecular statics |
MSPE | monolayer solid phase epitaxy |
NAA | neutron activation analysis |
ND | new thermal donor |
NDDO | neglect of diatomic differential overlap |
NDM | negative differential mobility |
NDO | neglect of differential overlap |
NF | noise figure |
NFET | n channel field effect transistor |
NI | not indicated |
NMOS | n channel metal oxide semiconductor |
NMOSFET | n channel |
MOSFET NN | nearest neighbour |
NNN | next nearest neighbour |
ODE | orientation-dependent etch |
ODMR | optically detected magnetic resonance |
OED | oxidation enhanced diffusion |
OIP3 | output-referred third order intercept point |
OISF | oxidation induced stacking fault |
OME | oxide mediated epitaxy |
OPW | orthogonalised plane wave |
OSF | oxidation induced stacking fault |
OV | oxygen-vacancy (centre) |
PACE | plasma assisted chemical etching |
PBS | poly-backside seal |
PC | photoconductivity |
PCD | photoconductivity decay |
PDG | phosphorus diffusion gettering |
PID | planar interstitial defect |
PIMC | path integral Monte Carlo |
PL | photoluminescence |
PLE | photoluminescence excitation |
PM | parametrised model |
PMOS | p channel metal oxide semiconductor |
PP | pseudopotential |
PPPW | pseudopotential plane-wave |
PR | piezoresistive |
PRDDO | partial retention of diatomic differential overlap |
PSG | phosphosilicate glass |
PTIS | photothermal ionisation spectroscopy |
PV | photovoltaic |
PW | Perdew-Wang |
PZ | Perdew-Zunger |
QP | quasiparticle |
RBE | reactive beam epitaxy |
RBS | Rutherford backscattering |
RE | rare earth |
RF | radio frequency |
RGA | residual gas analysis |
RHEED | reflection high-energy electron diffraction |
RIE | reactive ion etching |
RMS | root mean square |
RPCVD | reduced pressure chemical vapour deposition |
RSCE | reverse short-channel effects |
RT | room temperature |
RTA | rapid thermal anneal |
RTCVD | rapid thermal chemical vapour deposition |
RTP | rapid thermal processing |
RW | Rayleigh wave |
SAD | selected area diffraction |
SADS | silicide as the doping source |
SANS | small angle neutron scattering |
SB | Schottky barrier |
SBH | Schottky barrier height |
SBZ | surface Brillouin zone |
SCF | self-consistent field |
SCI | surface charge imaging |
SCP | surface charge profiling |
SDL | stable defect layer |
SE | spectroscopic ellipsometry |
SEM | scanning electron microscopy |
SETB | semi-empirical tight-binding |
SEU | single event upset |
SF | stacking fault |
SFT | stacking fault tetrahedra |
SGS | SiGe on sapphire |
SIMOX | separation by implantation of oxygen |
SIMS | secondary ion mass spectrometry |
SOI | silicon-on-insulator |
SOS | silicon-on-sapphire |
SPE | solid phase epitaxy |
SPER | solid phase epitaxial regrowth |
SPV | surface photovoltage |
SQUID | superconducting quantum interference device |
SR | spreading resistance |
SRAM | static random access memory |
SRH | Shockley-Read-Hall |
SRP | spreading resistance profile |
STD | shallow thermal donor |
STIR | site total indicator reading |
STM | scanning tunnelling microscopy |
STO | Slater-type orbital |
SX-LDA | screened-exchange local density approximation |
T | tetrahedral |
T | transverse |
TA | transverse acoustical |
TB | tight binding |
TBMD | tight binding molecular dynamics |
TBTE | tight-binding total-energy |
TCAD | technology computer aided design |
TCP | temperature coefficient of piezoresistance |
TCR | temperature coefficient of resistance |
TD | thermal donor |
TD | threading dislocation |
TDD | thermal double donor |
TED | transient enhanced diffusion |
TEM | transmission electron microscopy |
TFSOS | thin film silicon on sapphire |
TIME | Ti interlayer mediated epitaxy |
TO | transverse optical |
TR | transmit/receive |
TTV | total thickness variation |
TXRF | total reflectance X-ray fluorescence |
UHV | ultra high vacuum |
UHV/CVD | ultra high vacuum chemical vapour deposition |
ULSI | ultra large scale integration |
USTD | ultra-shallow thermal donor |
UV | ultraviolet |
V | vacancy |
VFF | valence force field |
VLPCVD | very low pressure chemical vapour deposition |
VLSI | very large scale integration |
VMC | variational Monte Carlo |
VO | vacancy-oxygen |
VPD-AAS | vapour phase decomposition atomic absorption spectroscopy |
VPE | vapour phase epitaxy |
VWN | Vosko-Wilk-Nusair |
WLF | Wannier-like function |
XPS | X-ray photoelectron spectroscopy |
XRD | X-ray diffraction |
XROI | X-ray and optical interferometry |
XTEM | cross-sectional transmission electron microscopy |
ZDO | zero differential overlap |