IEE Books

Properties of crystalline silicon

Edited by Robert Hull, University of Virginia, USA

CONTRIBUTING AUTHORS

| A | B | C | D | E | G | H | I | J | K | L | M | N | O | P | R | S | T | U | V | W | Y | Z | Notes |

O

Y. Okada
3.1

Electrotechnical Laboratory, Physical Science Division, 1-1-4, Umezono, Tsukuba, Ibaraki 305, Japan

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U

R.I.G. Uhrberg
5.3

Linköping University, Dept. of Physics and Measurement Technology, Linkoping 581 83, Sweden

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Z

V. Zielasek
5.1, 5.2

University of Wisconsin-Madison, Dept. of Materials Science, Engineering and Physics, 1509 University Avenue, Madison WI 53706, USA

J.A. de Alamo, K.G. Barraclough, J.C. Brice, A.A. Brown, M.V. Chaparala, D. de Cogan, J.P.R. David, D.J. Godfrey, Y.M. Haddara, S.C. Hardy, H.-M. Kagaya, P.J. Mole, P.B. Moynagh, K.H. Nicholas, D. Nobili, M. Pawlik, P.J. Rosser, D. Schechter, B.S. Shivaram, T. Soma, M.N. Wybourne and J. Vaitkus.

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T. Abe editor, chapter 1	Shin-Etsu Handotai Co, Ltd. 2-13-1 Isobe, Annaka, Gunma 379-01, Japan
C.A.J. Ammerlaan 11.3-11.5	University of Amsterdam, Van der Waals-Zeeman Institut Valckenierstraat 65, NL-1019 Amsterdam, Holland
M.J. Anc 18.9	Ibis Technology Corporation, 32 Cherry Hill Drive, Danvers, Ma 01923, USA
D.E. Aspnes editor, chapter 12	North Carolina State University, Dept. of Physics, Box 8202, Raleigh, NC 27695-8202, USA

J.C. Bean editor, chapter 2	University of Virginia, Dept. of Electrical Engineering, Thornton Hall, Charlottesville, VA 22903-2442, USA
Dr. H.S. Bennett 7.5	Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg 20899, US
P.R. Briddon 6.9	University of Newcastle upon Tyne, Physics Dept., Newcastle upon Tyne, NE1 7RU, UK
R.E. Brindos 14.1, 14.5	University of Florida, SWAMP Center, Dept. of Materials Science and Engineering, 525 Engineering Bldg., PO Box 116130, FL 32611-6130, USA
P. D. Bristowe 6.6	University of Cambridge, Dept. of Materials Science and Metallurgy, Pembroke Street, Cambridge CB2 3QZ, UK
M.R. Brozel editor, chapter 4	UMIST, Centre for Electronic Materials, PO Box 88, Manchester M60 1QD, UK

R.J. Carter 5.7, 5.8	North Carolina State University, Dept.of Physics, Box 8202, Raleigh, NC 27695-88202, USA
M.-J. Caturla 14.2	Lawrence Livermore National Laboratory, Chemistry and Materials Science L-268, 7000 East Avenue, Livermore, CA 94550, USA
Y.J. Chabal 5.5, 18.3, 18.6	Lucent Technologies, Bell Laboratories, 600 Mountain View, Murray Hill, NJ 07974, USA
S. Coffa 9.14, 14.3	CNR-IMETEM, Stadale Primosole 50, I-95121 Catania, Italy
S.R. Crowder 18.7	IBM Corporation, Microelectronics Division, Semiconductor R&D Center, 1580 Route 52 Hopewell Junction, NY 12533, USA

P. Deak 6.1	Physical Institute of the Technical University of Budapest, H-1521 Budapest, Hungary
P.R. de la Housssaye 18.2	NRad, NCCOSc, RDT Division, D805, Rm. 22953475 Strothe Road, San Diego, Ca 92152-6341, USA
T. D. de la Rubia 14.2	Lawrence Livermore National Laboratory, Chemistry and Materials Science L-268, 7000 East Avenue, Livermore, CA 94550, USA
E. Dornberger 1.6	Wacker Siltronic AG, Postfach 1140, D-84479 Burghausen, Germany
D.J. Dunstan 7.8	Queen Mary and Westfield College, Dept.of Physics, Mile End Road, London, E1 4NS, USA

R. Elliman editor, chapter 14	Australian National University, Electronic Materials Engineering Dept., GPO Box 4, Canberra, ACT 0200, Australia
C.P. Ewels 6.3	University of Sussex, School of Chemistry, Physics and Environmental Sciences, Falmer, Brighton, BN1 9QJ, UK

IEE Books

Properties of crystalline silicon

Edited by Robert Hull, University of Virginia, USA

CONTRIBUTING AUTHORS

| A | B | C | D | E | G | H | I | J | K | L | M | N | O | P | R | S | T | U | V | W | Y | Z | Notes |

A

B

C

D

E

G

H

I

J

K

L

M

N

O

P

R

S

T

U

V

W

Y

Z

Notes:

In producing the present volume Datareviews by the following authors of Properties of silicon (INSPEC, 1988) were reproduced, adapted or merged:

A. George editor, chapter 3	Ecole des Mines de Nancy, Laboratoire de Physique des Materiaux, CNRS UMR 7556, Parc de Saurupt, F-54042 Nancy, France
M.D. Giles 10.3	Intel Corporation, MS: RN2-40, 2200 Mission College Blvd., Santa Clara, Ca 95052, USA
D.W. Greve 2.2, 2.3	Carnegie Mellon University, Dept. of Electrical and Computer Engineering, Hamerschlag Hall, Pittsburgh PA 15213, USA
H. Grimmeis editor, chapter 11	Lund Institute of Technology, Dept.of Solid State Physics, Box 118, S-22100 Lund, Sweden
V. Grivickas 13.1, 13.4-13.8	Institute of Material Research and Applied Sciences, Vilnius University, Sauletekio 10, 2054 Vilnius, Lithuania

M. Heggie editor, chapter 6	University of Sussex, School of Chemistry, Physics and Environmental Sciences, Falmer, Brighton, BN1 9QJ, UK
M.M.Heyns 5.6	IMEC, VLSI Materials Technology, Kapeldreef 75, Leuven B-3001, Belgium
H. Hieslmair 15.1-15.5	Lawrence Berkley National Laboratory, Mailstop 62-203, 1 Cyclotron Road, Berkeley, CA 94720, USA
K. Hoshikawa 1.4	Shin-Shyu University, Education Facility, Nishi-Nagano, Nagano 380, Japan
X. Huang 1.4	Shin-Shyu University, Education Facility, Nishi-Nagano, Nagano 380, Japan
R. Hull volume editor	University of Virginia, Dept. of Materials Science & Engineering, Charlottesville, VA 22903, USA

A.A. Istratov 15.1-15.5	Lawrence Berkley National Laboratory, Mailstop 62-203, 1 Cyclotron Road, Berkeley, CA 94720, USA
S. S. Iyer editor, chapter 18	IBM Corporation, Microelectronics Division, Bldg. 630 ZIP E40, 1580 Route 52, Hopewell Junction NY 12533, USA

S.H. Jones editor, chapter 8	Virginia Semiconductor, Inc., 1501 Powhatan Street, Fredericksburg, Virginia 22401, USA
K.S. Jones editor, chapter 10 14.1, 14.4, 14.5	University of Florida, SWAMP Center, Dept. of Materials Science and Engineering, 525 Engineering Bldg., PO Box 116130 FL 32611-6130, USA
R. Jones 6.3	University of Exeter, Dept. of Physics, Exeter, EX4 4QJ, UK
G. Jungnickel 6.2	TU Chemnitz-Zwickau, 09107 Chemnitz, Germany

K. Kakimoto 1.2	Kyushiu University, Institute of Advanced Materials Study, 6-1, Kasuga-koen, Kasuga 816, Japan
P.H. Keys 14.1, 14.5	University of Florida, SWAMP Center, Dept. of Materials Sci. and Eng., 525 Engineering Bldg. PO Box 116130, FL 32611-6130, USA
S. Kobayashi 1.3	Sumitomo Metal Industries Ltd, Corporate R&D Laboratories, 1-8 Fuso-cho, Amagasaki, Hyogo, 660, Japan

M. Lagally 5.1, 5.2	University of Wisconsin-Madison, Dept. of Materials Science, Engineering and Physics, 1509 University Avenue, Madison WI 53706, USA
I. Lagnado 18.2	NRad, NCCOSc, RDT Division, D805, Rm. 229, 53475 Strothe Road, San Diego, CA 92152-6341, USA
N. Lehto 6.10	University of Sussex, School of Chemistry, Physics and Environmental Sciences, Falmer, Brighton, BN1 9QJ, UK
J.L. Lindstrom 13.3	Chalmers University of Technology, Physical Electronics and Photonics, Dept. of Microelectronics and Photonics, 4-412 96 Goteborg, Sweden
F. Liu 5.1, 5.2	University of Wisconsin-Madison, Dept. of Materials Science, Engineering and Physics, 1509 University Avenue, Madison WI 53706, USA

K. Maex 17.1	IMEC VZW, ASE/VMT, Kapeldreef 75, B-3001 Leuven, Belgium
A. Mainwood 6.4	King's College, London., Dept. of Physics, Strand, London WC2R 2LS, UK
S.A. McHugo 15.1-15.5	Lawrence Berkeley National Laboratory,Bldg. 2-400, 1 Cyclotron Road, CA 94720, USA
M.A. Mendicino 18.10	Motorola APRDL, Networking and Computing Systems Group, 3501 Ed Bluestein Blvd, Mail Drop K-10, Austin, TX 78721, USA
K. Mitani 18.4	Shin Etsu Handotai Co. Ltd., SEH Isobe R&D Center, 2-13-1 Isobe Annaka-Shi, Guma Prefecture, 379-01 Japan
J.-L. Mozos 6.8	Helsinki University of Technology, Laboratory of Physics, PO Box 1100, FIN-02015 HUT, Finland

R.J. Nemanich editor, chapter 5	North Carolina State University, Dept. of Physics, Box 8202, Raleigh, NC 27695-88202, USA
R.C. Newman 9.7	Imperial College, Blackett Laboratory, IRC Semiconductor Materials, London, SW17 2BZ, UK
R.M. Nieminen 6.7, 6.8	Helsinki University of Technology, Laboratory of Physics, PO Box 1100, FIN-02015 HUT, Finland

B. Pajot 9.1-9.4	Universite Denis Diderot, Group de Physique des Solides, 2, Place Jussieu - Tour 23, F-75251 Paris Cedex 05, France
S.J. Pearton editor, chapter 9	University of Florida, Dept. of Materials Science, Rhines Hall, PO Box 116400, Gainesville, FL 32611, USA
G. Pfeiffer 18.5	MEMC Electronic Materials Inc., MZ 33, 501 Pearl Drive, St. Peters, MO63376, USA
A. Polman 9.14	FOM Institute of Atomic and Molecular Physics, Kruislaan 407, Amsterdam SJ 1098, Holland
F. Priolo 14.3	University di Catania, Dipartimento di Fisica, Corso Italia 57, Catania I 95129, Italy
M.J. Puska 6.7	Helsinki University of Technology Laboratory of Physics, PO Box 1100, FIN-02015 HUT, Finland

G.B. Rayner 5.8	North Carolina State University, Dept. of Physics, Raleigh, NC 27695-8202, USA
S.G. Roberts 3.8	University of Oxford, Dept. of Materials, Parks Road, Oxford OX1 3PH, UK
P. Roman 5.4	Pennsylvania State University, Dept. of Electrical Engineering, 214 Electrical Engineering West, University Park, PA 16802, USA
J. Ruzyllo 5.4	Pennsylvania State University, Dept. of Electrical Engineering, 214 Electrical Engineering West, University Park, PA 16802, USA

K. Sadana 18.9	IBM Corp., Thomas J.Watson Research Center, PO Box 218, Yorktown Heights, NY 10598-0218, USA
B. Schmiedeskamp 7.3	Universitaet Bielefeld, Fakultat fur Physik, D-33501 Bielefeld, Germany
L.J. Schowalter editor, chapter 17	Rennselaer Polytechnical Institute, Physics Dept. CIEEM, 110 8th Street, Troy, NY 12180-3590, USA
W. Schroter 9.11, 9.12	Universitaet Goettingen, IV Physikalisches Institut der Georg-August, Bunsenstrasse 13-15, D-37073 Goettingen, Germany
M. Seibt 9.11, 9.12	Universitaet Goettingen, IV Physikalisches Institut der Georg-August, Bunsenstrasse 13-15, D-37073 Goettingen, Germany
H. Siethoff 3.6	Physikalisches Institut der, Universitaet Wuerzburg, Am Hubland, D-97074 Wuerzburg, Germany
G. P. Srivastava 6.5	University of Exeter, Dept. of Physics, Stocker Road, Exeter, EX4 4QL, UK
M. Stavola 9.8, 9.9	Lehigh University, 16 Memorial Drive East, Bethlehem, PA 18015, USA
E. Steinman 11.2	Moscow State University, ISSP, Institututski prospekt 15, 142432 Chernogolovka, Moscow Region, Russia
A. Strachan 8.6	SILVACO International, Inc., 4701 Patrick Henry Drive #1, Santa Clara, CA 95054, USA
M. Suezawa 9.10	Tohoku University, Institute of Materials Research, Katahira 2-1-1, Sendai 980, Japan
K. Sumino 3.5	Nippon Steel Corporation, 20-1 Shintomi Futtsu, Chiba 293-8511, Japan
B.G. Svensson 13.2	Royal Institute of Technology, Solid State Electronics, PO Box E-229 Kista, Stockholm S-164-40, Sweden

G. Vanderschaeve 3.7	CEMES/CNRS, 29 rue Jeanne Marvig, BP 4347, F-31055 Toulouse, France
W. von Ammon 1.6	Wacker Siltronic AG, Postfach 1140, D-84479 Burghausen, Germany

E.B. Yakimov 11.2	Moscow State University, ISSP, Institututski Prospekt 15, 142432 Chernogolovka, Moscow Region, Russia
H. Ying 5.8	North Carolina State University, Dept. of Physics, Box 8202, Raleigh, NC 27695-88202, USA
T. Yonehara 18.8	Canon Inc., 6770 Tamura, Hiratsuka, Kangawa Prefecture, Japan
I. Yonenaga 3.5	Tohoku University, Institute for Materials Research, Katahira 2-1-1, Sendai 980-8511, Japan

K. Terashima 1.1	Shounan Engineering University, Materials Engineering Dept., Nishi-Kaigan 1-1-25, Tsujido, Fujisawa-shi, Kanagawa 251, Japan
G. Theodorou 7.7	Aristotle University of Thessaloniki, Dept. of Physics, 540 06 Thessaloniki, Greece
R. Tung 17.2	Lucent Technologies, Bell Labs Room 1t-102, 700 Mountain Avenue, Murray Hill, NJ, USA
R. Turton editor, chapter 7	University of Newcastle upon Tyne, Solid State Physics Group, Dept. of Physics, Newcastle upon Tyne, NE1 7RU, UK

K. Wada 1.5	NTT System Electronics Labs., 3-1, Morinosato, Wakamiya Atsugi-shi, Kanagawa 243-01, Japan
P. Wagner 9.13	Wacker Siltronic AG, Postfach 1140, D-84479 Burghausen, Germany
G.D. Watkins 11.1	Lehigh University, Dept. of Physics, 16 Memorial Drive East, Bethlehem, PA 18105, USA
E.R. Weber editor, chapter 15	University of California at Berkeley, Dept. of Materials Science, 587 Evans Hall, CA 94720, USA
J. Weber 7.4	Max Planck Institut fuer Festkorperforschung, Heisenbergstrasse, 70569 Stuttgart, Germany
M.K. Weldon 18.3, 18.6	Lucent Technologies, Bell Laboratories, 600 Mountain View, Murray Hill, NJ 07974, USA
M. Willander editor, chapter 13	Chalmers University of Technology, Physical Electronics and Photonics, Dept. of Microelectronics and Photonics 4-412 96 Goteborg, Sweden
K.R. Williams editor, chapter 16	Lucas NovaSensor, 1055 Mission Ct., Fremont, CA 94539-8203, USA