 |
Simulation of
characteristics of a small sized lateral trench electrode IGBT, E.G. Kang, S.H. Moon,
M. Y. Sung, Korea University, Korea |
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A new lateral
trench IGBT with p+ diverter having superior electrical characteristics, E. G. Kang,
S. H. Moon, M. Y. Sung, Korea University, Korea |
|
Applications
of nanoporous alumina membranes, S. Pruneanu, G.Mihailescu, S. Neamtu, L. Olenic,
L.P.Biro*, National Institute of R&D for Isotopic and Molecular
Technologies, Cluj-Napoca, Romania , *Research Institute for Technical Physics and
Science, Budapest, Hungary |
|
Advanced
planarization tehniques for devices with multi-level stuctures, C. Dunare, T.
Stevenson, W. Parks, A. Gundlach, A. Walton, University of Edinburgh, U.K. |
|
From the
physics to the spice equivalent circuits. Application to a microwave GaAs-HBT, J. M.
Lopez-Gonzales, P. Garcias-Salva, L. P. Vinas, Universitat Politecnica de Calalunya, Spain |
|
Optimizing
the double diffusion process, for power diodes, L. Galateanu, E. Popa*, A. Nichita*,
IMT-Bucharest *Baneasa SA, Romania |
|
SIMS analyses
for Schottky contact optimization, L. Galateanu1, M. Bucur2, L.
De Schepper3, 1IMT-Bucharest, 2Baneasa S.A. Romania, 3IMO,
Belgia |
|
Etching
processes of Si <111> wafers for fabrication of microphotonic components, D.
Cristea, M. Purica, E. Manea, P.Obreja, IMT-Bucharest, Romania |
|
Physical
problems of gas sensors' reliability , V.A. Smyntyna, V.S. Grinevich, Odessa National
University, Ukraine |
|
About the
possibility of overcurrent power semiconductor protection using controlled fusing, A.
T. Plesca, P. Leonte, Technical University, Iasi, Romania |
