HORI S., TSUCHITANI M., OOSAWA A., BABA Y., YAWATA S., "4.5 kV IGBT junction termination technique using the SIPOS RESURF structure", ISPSD'98, pp. 277-280, 3-6 June 1998.

HORI S., TSUCHITANI M., OOSAWA A., BABA Y., YAWATA S., "4.5 kV IGBT junction termination technique using the SIPOS RESURF structure", ISPSD'98, pp. 277-280, 3-6 June 1998. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [99ART136]

Titre : HORI S., TSUCHITANI M., OOSAWA A., BABA Y., YAWATA S., 4.5 kV IGBT junction termination technique using the SIPOS RESURF structure, ISPSD'98, pp. 277-280, 3-6 June 1998.

Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits
Cité dans : [DIV137]  Recherche sur les mots clés : FIABILIT* ou RELIABILITY, octobre 1999.

Auteurs : Hori, S.; Tsuchitani, M.; Oosawa, A.; Baba, Y.; Yawata, S. - Semicond. Div., Toshiba Micro Electron Center, Japan

Appears : in Power Semiconductor Devices & ICs, 1998. ISPSD 98. Proceedings of the 10th International Symposium on
Page : 277 - 280
Date : 3-6 June 1998
ISBN : 0-7803-4752-8, IEEE Catalog Number: 98CH36212, Total Pages: xxiii+513, Accession_Number : 6090243
Lien : private/HORI.pdf - 392 Ko.

Abstract :
In order to obtain high voltage and high reliability devices, the
semi-insulating polycrystalline silicon (SIPOS) film and reduced
surface field (RESURF) structure are selected from several planar
junction termination techniques. A 4.5 kV IGBT was realized using
the SIPOS RESURF structure with some optimizations. The
termination structure is optimized for high voltage by the RESURF
length and the boron ion implantation dosage of the RESURF layer.
The SIPOS film is optimized to reduce transient voltage-induced
leakage current (TVIC) and to obtain high reliability. As a
result, a 5.0 kV static blocking voltage IGBT without TVIC is
realized using a 525 /spl mu/m thickness/450 /spl Omega/cm
resistivity substrate.

Subjet_terms :
power bipolar transistors; IGBT junction termination technique;
SIPOS RESURF structure; high reliability devices; high voltage
devices; semi-insulating polycrystalline silicon film; SIPOS
film; reduced surface field structure; RESURF structure; planar
junction termination techniques; SIPOS RESURF structure
optimization; termination structure; RESURF length; boron ion
implantation dosage; RESURF layer; transient voltage-induced
leakage current; static blocking voltage; resistivity; substrate
thickness; 4.5 kV; 5 kV; 525 micron; 450 ohmcm; SiO/sub 2/-Si-Si:B

Reference_cited : 1

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