PCIM 1999 PCIM Conference Tuesday, 22.06. POWER CONVERSION Wednesday 23.06 Thursday 24.06 Registration Key-Note Papers Dialogue Sessions Oral Sessions Time-Table for Tuesday, June 22. 1999 OPENING 09:00 am - 09:20 am Key-Note Papers 09:30 am - 11:30 am Dialogue Sessions 11: 30 am - 12:30 pm Oral Sessions 02:30 pm - 06:10 pm KEY-NOTE PAPERS Chairman: Prof. Jean-Marie Peter, SEE, France 9:30 am - 11:30 am K1 RELIABILITY OF HIGH-POWER SEMICONDUCTOR DEVICES. FROM THE -STATE-OF-THE-ART TO FUTURE TRENDS Eckhard Wolfgang, Siemens, Germany The reliability of high-power semiconductor devices assumes ever greater importance as switching power and speeds increase. Three approaches are available to secure reliability: build-in reliability, accelerated reliability tests and testing the device in a system that operates under particular stress conditions. The results of the EU BriteEuRam project RAPSDRA (reliability of advanced power semiconductor devices for railway traction applications) led to the elaboration of proposals for standardised accelerated reliabilty tests on the basis of the physics of failure concepts. This involved discussion of the following points: * Future requirements on reliability * Causes of main failure mechanisms * Approaches to solutions for minimising reliability risks. This includes the use of new components and new materials. Finally, an experiment is described in which the chip temperatures could be measured in converter operation. This procedure could point the way to future designs of power electronics components. K2 INDUSTRIAL APPLICATIONS OF SUPERCAPACITORS FROM THE STATE-OF-THE-ART TO FUTURE TRENDS Rene Spee, Maxwell Technologies, USA Recent developments in basic technology, materials and manufacturability have made double-layer capacitors in viable tool for the power electronics designer for short term energy storage. With much higher energy density than electrolytic capacitors and none of the problems associated with conventional battery technology, supercapacitors are very attractive for industrial storage applications. The paper discusses the status of both basic supercapacitor technology as well as state-of-the-art product applications in the 25 to 200kW power range. Also presented is an overview over future trends regarding the capacitor component itself as well as application scenarios for adjustable speed drives, uninterruptible power supplies and power quality compensators. K3 SIMULATION OF POWER CONVERSION SYSTEMS: FROM THE-STATE-OF-THE-ART TO FUTURE TRENDS Prof. Sam Ben-Yaakov, Ben-Gurion University of the Negev, Israel This overview presents the capabilities of current simulation tools when applied to power conversion systems. Two basic approaches are discussed and explained while pointing out to their usefulness and shortcomings: cycle by cycle simulation and behavioral average simulation. It is shown that these techniques, and in particular the latter, can help the designer in optimizing PWM and resonant converters systems and handle intricate problems such as feedback design and dynamic stability analysis. The review also discusses some new approaches that are just being developed such as envelope average simulation. Finally, some observation on the future of power conversion system simulation is offered and argued. --------------------------------------------------------------------------- Session Time Breaks DIALOGUE SESSIONS 11:30 am – Coffee time Power Semiconductors 12:30 pm included D1 AUTOMOTIVE SMARTMOSTM TECHNOLOGY TRENDS F. Vareilhias, P. Mounier, Motorola Semiconductors, FRANCE D2 SBCD HYBRID TECHNOLOGY GIVES A NEW GENERATION OF FLUORESCENT LAMP BALLAST IC's N. Aoike, H. Nakamichi, H. Soh, Sanken Electric, JAPAN, M. Lovell, Allegro MicroSystems, FRANCE D3 HIGH CURRENT MODULE FOR THE AUTOMOBILE INDUSTRY - A NEW DEVELOPMENT FOR A NEW MARKETM. Loddenkötter, M. Hierholzer, G. Ferber, A. Vetter, H. Hellbrück, eupec, Germany D4 2nd GENERATION OF 1200A-3300V HVIGBT MODULE M. Matsumoto, M. Takeda, M. Ishii, Mitsubishi Electric, JAPAN, F. Lecoq, E. Thal, Mitsubishi Electric Europe, GERMANY D5 A LIQUID-COOLED 1500A, 4500V IGBT MODULE FOR TRACTION APPLICATIONS S. Dewar, S. Kaufmann, M. Bayer, ABB Semiconductors, SWITZERLAND D6 MTO(TM) THYRISTORS FOR EFFICIENT POWER CONTROL D. Piccone, R. Rodrigues, T. Hansen, A. Huang, Silicon Power Corporation, USA D7 SILICON MAX: ADVANCES IN ON-STATE & SWITCHING PERFORMANCE FOR DC-DC POWER CONVERTERS E. Huang, Philips Semiconductors, GREAT BRITAIN D8 COMPONENT-EVALUATION EQUIPMENT FOR HIGH-CURRENT (200A), SHORT TIME (2µs) AVALANCHE TESTING J.F. Villard, Y. Lausenaz, D. Chatroux, CEA VALRHO, FRANCE, D. Lafore, CEGEMA, FRANCE D9 A NEW APPROACH FOR PREDICTING IGBT LOSSES IN SWITCHED MODE CIRCUITS - A NUMERICAL METHOD FOR EVALUATING CURRENT, VOLTAGE AND TEMPERATURE DEPENDANT IGBT SWITCHING AND CONDUCTION LOSSES R.H. Randall, A. Laprade, Harris Corporation, USA, G. Bober, Harris Semiconductor, GERMANY D10 POWER ELECTRONICS AND ITS PACKAGING FOR SEVERE THERMAL REQUIREMENTS K. Wallbanks, Raytheon Systems, GREAT BRITAIN D11 SWITCHING BEHAVIOUR OF THE PT- and NPT IGBT UNDER ZCS OPERATION IN A SPECIAL TEST CIRCUIT M.Cotorogea, CENIDET, MEXICO D12 IMPROVEMENTS IN ROGOWSKI CURRENT TRANSDUCERS W.F. Ray, R.M Davis, Power Electronics Measurements, GREAT BRITAIN D12 a POWER CAPABILITY AND RELIABILITY OF HIGH POWER SEMICONDUCTORS D. Westerholt, eupec, GERMANY D12 b NEW DIODES WITH PRESSURE CONTACT FOR HARD-SWITCHED HIGH POWER CONVERTERS R. Barthelmeß, M. Beuermann, N. Winter, eupec, GERMANY Time for lunch and visiting the exhibition --------------------------------------------------------------------------- Session Time Breakes Session PC1 2:30 pm – 4:30 pm NEW COMPONENTS Chairman: Eric Carroll, ABB Semiconductors, Switzerland 1.1 COOLMOS - A NEW APPROACH TOWARDS AN IDEALIZED POWER SWITCH L. Lorenz, Siemens, GERMANY 1.2 THE STANDARD MODULE OF THE 21st CENTURY S. Dewar, S. Linder, N. Kaminski, T. Stockmeier, ABB Semiconductors, SWITZERLAND, R. Zehringer, ABB Coorporate Research, SWITZERLAND, R. Francis, C. Ng, International Rectifier, USA 1.3 6.5kV IGBT-MODULES F. Auerbach, J. Bauer, M. Glantschnig, A. Porst, D. Reznik, Siemens, GERMANY, J. Göttert, M. Hierholzer, R. Spanke, eupec, GERMANY 1.4 POWER MODULE DESIGN FOR HV-IGBTs WITH EXTENDED RELIABILITY , U. Scheuermann, Semikron Elektronik, GERMANY 1.5 4.5kV-1200A POWER PACK IGBT (New High Power Flat-Packaged new PT type RC-IGBT) Y. Takahashi, K. Yoshikawa, T. Koga, K. Yanazaki, M. Ichijyou, Y. Seki, Fuji Electric, JAPAN Coffee break 30 minutes Session PC 2 5:00 pm – 6:30 pm NEW COMPONENTS Chairman: Leo Lorenz, SIEMENS, Germany 2.1 A 3300V 1200A INTEGRATED INTELLIGENT POWER MODULE WITH IMPROVED FREEWHEELING DIODEJ. Lutz, J. Nascimento, E. Schimanek, Semikron Elektronik, GERMANY 2.2 A NEW GENERATION HIGH-CONDUCTIVITY IGBT (HiGT) WITH LOW LOSS AND PUNCHTHROUGH STRUCTURE M. Mori, Y. Uchino, H. Kobayashi, Hitachi, JAPAN 2.3 NEW HIGH RELIABILITY BONDLESS PRESSURE CONTACT IGBT's F.J. Wakeman, G. Lockwood, M. Davies, Westcode Semiconductors, GREAT BRITAIN 2.4 SMPS-IGBT BREAKING BARRIER IN FREQUENCE S. Shekhawat, A. Craig, Harris Corporation, USA, B. Arlt, Harris Semiconductors, GERMANY Session PC 3 – Parallel Session 2:30 pm – 4:30 pm POWER INTEGRATION, DRIVE, MODELLING Chairman: Denis Grafham, APT, USA 3.1 A FULLY PROTECTED MONOLITHIC SMART IGBT DEVELOPED WITH A STANDARD TECHNOLOGY L. Fragapane, A. Torres, G. di Stefano, STMicroelectronics, ITALY 3.2 REVIEW OF CURRENT STATUS OF POWER ELECTRONIC PACKAGING FOR DC/DC POWER SUPPLIES M. Meinhardt, J. Flannery, P. Cheasty, S. Eckert, V. Leonavicius, S.C. O'Mathuna, PEI Technologies, IRELAND, A. Alderman, International Rectifier, USA 3.3 MINIATURE DUAL-LINE-PACKAGE INTELLIGENT POWER MODULE G. Majumdar, M. Iwasaki, H. Kawafuji, T. Shinohara, J. Yoshioka, Mitsubishi Electric, JAPAN, K.H. Hussein, Fukuryo Semicon Engineering, JAPAN, T. Roth, Mitsubishi Electric, GERMANY 3.4 GETTING BETTER PERFORMANCE FROM GTOs USING IMPROVED GATE DRIVES C.J. Smith, Mitel Semiconductor, GREAT BRITAIN 3.5 SMPS-IGBT DESCRIBED BY A SABER MODEL A. Craig, Harris Corporation, USA, H.-P. Hoenes, G. Bober, Harris Semiconductor, GERMANY Coffee break 30 minutes Session PC 4 – Parallel Session 5:00 pm – 6:10 pm PASSIVE COMPONENTS Chairman: Prof. Franz Zach, University of Vienna, Austria 4.1 OPTIMAL THERMAL MANAGEMENT OF PLANAR MAGNETICS IN HIGH FREQUENCY SMPS D. Grafham, Payton Planar Magnetics, BELGIUM 4.2 INCREASED VOLTAGE WITHSTAND OF DC POWER CAPACITORS M. Carlen, ABB Corporate Research, SWITZERLAND, J. Connolly, ABB Power T&D, GREAT BRITAIN 4.3 NEW METHOD FOR INTEGRATION OF INDUCTOR AND TRANSFORMER ON A STANDARD CORE M. Duffy, M. Meinhardt, T. O'Donnell, S. O'Reilly, J. Flannery, C. O'Mathuna, PEI Technologies, IRELAND --------------------------------------------------------------------------- Back to Top --------------------------------------------------------------------------- Wednesday Thursday Registration Books/CDROMs* --------------------------------------------------------------------------- * Proceedings for 1999 are available from June, 22. on. For oder facilities please use the button "Books/CDROMs"