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Circuit
Features
Description
Absolute Maximum Ratings
Electrical Characteristics

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TIL111, TIL114, TIL116, TIL117
OPTICALLY COUPLED ISOLATOR

Circuit

Features

Isolation 2500 V (TIL111: 1500V)
High DC Current Transfer Ratio
Low Cost Dual-In-Line Package

Description

The TIL111, TIL114, TIL116, TIL117 are each an optically coupled isolator consisting of a Gallium Arsenide infrared emitting diode and an NPN silicon phototransistor mounted in a standard 6-pin dual-in-line package. Surface Mount Option Available.
All electrical parameters are 100% tested by manufacturing. Specifications are guaranteed to a cumulative 0.65% AQL.

Absolute Maximum Ratings (Ta=25°C)

Storage Temperature:
Operating Temperature:
Lead Soldering:
Input-to-Output Isolation Voltage:
-55°C to +150°C
-55°C to +100°C
260°C for 10s, 1.6mm from case
±2500V (TIL111: ±1500V) (note 1)

Input Diode

Forward DC Current:
Reverse DC Voltage:
Peak Forward Current (tp=10µs):
Power Dissipation:
Derate Linearly:
60mA
3V
3A
100mW
1.33mW/°C above 25°C

Output Transistor

Collector-Emitter Voltage:
Emitter-Collector Voltage:
Collector-Base Voltage:
Power Dissipation:
Derate Linearly:
30V
7V
70V
150mW
2.00mW/°C above 25°C

Package

Total Power Dissipation:
Derate Linearly:
250mW
3.3mW/°C above 25°C

Electro-optical Characteristics (Ta=25°C)

INPUT PARAMETER CONDITIONS VALUE
VF Forward Current IF=16mA 1.4 V Max
IR Reverse Current VR=3V 10 µA Max
VR Reverse Breakdown Voltage IR=10µA 3 V Min
OUTPUT
BVCEO Collector-Emitter Voltage IC=1mA 30 V Min
BVECO Emitter-Collector Voltage IE=0.1mA 7 V Min
BVCBO Collector-Base Voltage IC=0.1mA 70 V Min
ICEO Collector-Emitter Dark Current VCE=10V, IB=0 50 nA Max
ICBO Collector-Base Dark Current VCB=10V, IE=0 20 nA Max
CCE Collector-Emitter Capacitance VCE=0 10 pF Typ
HFE
IC=0.1mA, VCE=5.0V 100
150
Min
Typ
COUPLED PARAMETER CONDITIONS MIN UNIT
IC/IF DC Current Transfer Ratio IF=16mA, VCE=0.4V
TIL111 12.5 % Min
TIL114, 116, 117 50 % Min
VCE(SAT) Collector-Emitter Saturation Voltage IF=16mA, IC=2mA 0.4 V Max
CIO Capacitance Input to Output f=1MHz, note 1 0.6 pF Typ
tR Output Rise Time VCC=10V, IC=2mA, RL=100ohm 2 µs Typ
tF Output Fall Time Typ
RISO Input-Output Isolation Voltage Note 1
TIL111 ±1500 V Min
TIL114, 116, 117 ±2500 V Min

Notes

1. Measured with input leads shorted together and output leads shorted together.

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