C. BENBOUJEMA, A. SCHELLMANNS, L. VENTURA, T. LEQUEU, "Improvement of a bidirectional field effect transistor (FET) switch with less loss", Industrial Electronics, ISIE 2009, IEEE International Symposium on, 5-8 July 2009, pp. 2001-2005.

C. BENBOUJEMA, A. SCHELLMANNS, L. VENTURA, T. LEQUEU, "Improvement of a bidirectional field effect transistor (FET) switch with less loss", Industrial Electronics, ISIE 2009, IEEE International Symposium on, 5-8 July 2009, pp. 2001-2005. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET603]

Titre : C. BENBOUJEMA, A. SCHELLMANNS, L. VENTURA, T. LEQUEU, Improvement of a bidirectional field effect transistor (FET) switch with less loss, Industrial Electronics, ISIE 2009, IEEE International Symposium on, 5-8 July 2009, pp. 2001-2005.

Cité dans : [DATA033] Liste des publications de Thierry LEQUEU et activités de recherche, octobre 2022.
Cité dans : [PAP635]  C. BENBOUJEMA, A. SCHELLMANNS, L. VENTURA, T. LEQUEU, Improvement of a bidirectional field effect transistor (FET) switch with less loss, ISIE 2009, 6 pages.
Cité dans : [DIV398]  Les revues IEEE Transactions on Industry Applications et IEEE Industry Applications Society - IAS, novembre 2005.

Auteur : Chawki BENBOUJEMA
Auteur : Ambroise SCHELLMANNS
Auteur : Laurent VENTURA
Auteur : Thierry LEQUEU

Source : Industrial Electronics, 2009. ISIE 2009. IEEE International Symposium on
Date : 5-8 July 2009
Pages : 2001 - 2005
Location : Seoul
ISBN : 978-1-4244-4347-5
INSPEC-Accession-Number : 10846841
Digital-Object-Identifier : 10.1109/ISIE.2009.5213761
URL : http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5213761&isnumber=5213059
Lien : private/BENBOUJEMA2.pdf - 6 pages, xxx Ko.
Vers : Bibliographie

Abstract :
In this paper, we suggest a new behaviour for a MOSFET bidirectional switch for AC main application. We use two transistors of high voltage power MOSFET new technology based on the CoolMOS, one to control the forward current, and the second one to short-circuit the complementary diode, thus, for the first time, significantly decrease its power dissipation. For that, we must improve the power transistor's with the low switching losses (RDS(on)).

Bibliographie

REFERENCES : 9
[1] : Meharegzi Tewolde, and Shyama P. Das,”A Novel Control of Bi-Directional Switches in Matrix Converter”, IEEE, 0-7803-9772, 2006.
[2] : M. J. Bland, P. W. Wheeler, J. C. Clare, L. Empringham, ”Comparison of Bi-directional Switch Components for Direct AC-AC Converters”, IEEE, 07803-8399, 2004.
[3] : L Empringham, P W Wheeler, J C Clare, ”Matrix converter Bidirectional switch commutation using intelligent gate drivers”, Power Electronics and Variable Speed Drives, 21-23 September 1998, 456 0 IEE 1998.
[4] : D. Chamund, W. Findlay, K. Birkett, “Bi-directional switch packaging for higher power matrix converters”, Dynex Semiconductor 2003.
[5] : C. Benboujema, A. Schellmanns, L. Théolier and L. Ventura, “Improvement of a bidirectional switch for electric network” Proceedings of International Conference On Communication, Computer and Power 2009, Muscat, Sultanat of Oman, February 2009. pp. 243-246.
[6] : B.Jayant Baliga,”Power Semiconductor Device”, pp. 434 – 440, PWS publishing company, Boston, 1996.
[7] : M.A.Choudhry, Jill J. Ye, “Experimental and simulation results of MOScontrolled Thyrsistor for AC switch and AC voltage controller”, IEEE, 1995.
[8] : L. Lorenz, G. Deboy, A. Knapp, M. März, “COOLMOS™ - a new milestone in high voltage Power MOS”, Siemens AG, Semiconductor Division, Balanstr, 2005.
[9] : http://www.cadence.com/us/pages/default.aspx

  [1] : [LIVRE015] B.J. BALIGA, Power Semiconductor devices, 1996.
  [2] :  [PAP158]  -------

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