C. FURBOCK, K. ESMARK, M. LITZENBERGER, D. POGANY, G. GROOS, R. ZELSACHER, M. STECHER, E. GORNIK, "Thermal and free carrier concentration mapping during ESD event in Smart Power ESD protection devices using an improved laser interferometric technique", ER
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Article : [SHEET462]

Titre : C. FURBOCK, K. ESMARK, M. LITZENBERGER, D. POGANY, G. GROOS, R. ZELSACHER, M. STECHER, E. GORNIK, Thermal and free carrier concentration mapping during ESD event in Smart Power ESD protection devices using an improved laser interferometric technique, ERSEF'2000, pp. 1365-1370.

Cité dans : [DATA126] ESREF'2000, 11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Dresden, Germany, 2-6 octobre 2000.
Cité dans : [DATA204] fke, Institut für Festkörperelektronik (E362), 2000.
Cité dans :[THESE090] S. MOREAU, Fiabilité environnementale des composants de puissance : le TRIAC, Thèse de Doctorat, soutenue le 17 mai 2005, 127 pages.
Auteur : C. Fürböck
Auteur : K. Esmark
Auteur : M. Litzenberger
Auteur : D. Pogany
Auteur : G. Groos
Auteur : R. Zelsacher
Auteur : M. Stecher
Auteur : E. Gornik

Source : ESREF'2000, "11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", Dresden, Germany.
Date : 2-6 octobre 2000
Stockage : Thierry LEQUEU
Pages : 1365 - 1370
Info : ISE + thermal + laser. Presentation de M. Litzenberger.


Bibliographie

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References : 14
[1] Amerasekera A and Duvvury D. ESD in silicon integrated circuits. J Wiley & Sons, 1995.
[2] Krieger G. Thermal response of integrated circuit input devices to an electrostatic energy pulse, IEEE Trans. Electron Dev., ED-34 (1987) 877-882.
[3] Stricker AD, Mettler S, Wolf H, Mergens M, Wilkening W, Gieser H and Fichtner W. Characterization and optimization of a bipolar ESD-device by measurements and simulations. Proc. EOS/ESD Symp. (1998) 290-300.
[4] Mergens M, Wilkening W, Mettler S, Wolf H, Stricker A and Fichtner W. Analysis and compact modeling of lateral DMOS power devices under ESD stress conditions. Proc. EOS/ESD Symp. (1999) 1-10.
[6] Goldstein M, Sölkner G and Gornik E. Heterodyne interferometer for the detection of electric and thermal signals in integrated circuits through the substrate. Rev. Sci. Instr. 64 (1993) 3009-3013.
[7] Seliger N, Habas P, Pogany D and Gornik E. Time-resolved analysis of self-heating in power VDMOSFETs using backside laserprobing. Solid-State Electronics 41 (1997) 1285-1292.
[8] Fürböck C, Seliger N, Pogany D, Litzenberger M, Gornik E, Stecher M, Gossner H and Werner W. Backside Laserprober characterization of thermal effects during high current stress in Smart Power ESD protection devices, IEDM Tech. Dig. (1998) 691-694.
[9] Fürböck C, Pogany D, Litzenberger M, Gornik E, Seliger N, Gossner H, Müller-Lynch T, Stecher M and Werner W. Interferometric thermal mapping during ESD stress and failure analysis of smart power technology ESD protection devices. Proc. EOS/ESD Symp. (1999) 241-250.
[10] Gossner H, Müller-Lynch T, Esmark K and Stecher M, Wide range control of the sustaining voltage of ESD protection elements realized in a smart power technology. Proc. EOS/ESD Symp. (1999) 19-27.
[11] McCaulley JA, Donnelly TVM, Vernon M and Taha I. Temperature dependence of the near-infrared refractive index of sdilicon, gallium arsenide, and indium phosphid. Phys. Rev. 49 (1994) 7408-7417.
[12] Bertolotti M, Bogdanov V, Ferrari A, Jascow A, Nazorova N, Pikhtin A and Schirone L. Temperature dependence of the refractive index in semiconductors. J. Opt. Soc. Am. B 7 (1990) 918-922.
[13] Soref RA and Bennett BR. Electrooptical effects in silicon. IEEE J. Quantum Electronics 23 (1987) 123-129.
[14] ISE Integrated Systems Engineering AG, Switzerland, ISE TCAD Manuals, 1998, Release 5.0, Part 14: DESSIS.

  [1] : [SHEET484] M. GOLDSTEIN, G. SöLKNER, E. GORNIK, Heterodyne interferometer for the detection of electric and thermal signals in integrated circuits through the substrate, Rev. Sci. Instr. 64 (1993) 3009-3013.
  [2] : [SHEET485] H. Gossner, T. Müller-Lynch, K. Esmark, M. Stecher, Wide range control of the sustaining voltage of ESD protection elements realized in a smart power technology, Proc. EOS/ESD Symp. (1999) 19-27.
  [3] : [SHEET486] J.A. MCCAULLEY, T.V.M. DONNELLY, M. VERNON, I. TAHA, Temperature dependence of the near-infrared refractive index of silicon, gallium arsenide, and indium phosphid, Phys. Rev. 49 (1994) 7408-7417.
  [4] :  [PAP158]  -------
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  [8] : [SHEET147] C. Fürböck, N. Seliger, D. Pogany, M. Litzenberger, E. Gornik, M. Stecher, H. Gossner, W. Werner, Backside Laserprober characterization of thermal effects during high current stress in Smart Power ESD protection devices, IEDM Tech. Digest, 1998, pp. 691


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