D. JAUREGUI, "Estimating T J of SO-8 Power MOSFETs", DESIGN TIP DT 99-2, International Rectifier.
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Titre : D. JAUREGUI, Estimating T J of SO-8 Power MOSFETs, DESIGN TIP DT 99-2, International Rectifier.

Cité dans : [DIV341]  Informations diverses sur les Thermocouples, décembre 2010.
Auteur : David Jauregui, International Rectifier 233 Kansas Street El Segundo CA 90245 USA

Stockage : Thierry LEQUEU
Lien : DT99-2.pdf - 117 Ko, 2 pages.
Site : http://www.irf.com/technical-info/designtp/dt99-2.pdf

Background :
It is a fundamental industry need to accurately mea-sure
junction temperature (T J ) of power MOSFETs in an
operating circuit. This need has led many designers to
inquire how to accurately measure T J for Power MOSFETs
in SO-8 packages and question the R 2JC for these devices.1
Several means to measure T J for these power MOSFETs
have been created throughout the industry. A common
method used is the placement of a thermocouple on the
top of the device. Another method is measuring the lead
temperature and adding 10ºC to 15ºC to the measured
temperature and assuming that was the T J . An additional
method would be the use of an infrared camera to mea-sure
case temperature.

Method :
In practice, the actual junction temperature of a power
MOSFET in a SO-8 package is within 5ºC of the mea-sured
case temperature of the device.2 The case tem-perature
(T C ) can be best measured with an infrared cam-era.
An alternative would be to use a small thermocouple
and suitable meter. The most critical issue is the point of
measurement, refer to Figure 1.
The hottest spot on an SO-8-packaged MOSFET is near
the drain leads. Measuring at this location gives a close
indication of the junction temperature. Technical details in
the following paragraphs validate the method for use in
thermal design verification.


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