Revue : [REVUE279]

Titre : Elsevier Science, Microelectronics Reliability, Volume 41, Issues 9-10, Pages 1273-1736, September - October 2001.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.
Cité dans : [CONF016] ESREF, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis et Microelectronics and Reliability, décembre 2005.
Cité dans : [DATA227] ESREF'2001, 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Arcachon, France , 1-5 octobre 2001.

Volume : 41, Issues 9-10,
Pages : 1273 - 1736
Date : September - October 2001

[1] : Full-Chip Reliability Simulation for VDSM Integrated Circuits, Pages 1273-1278
Lifeng Wu and Zhihong Liu
Lien : vide.pdf - Format-PDF (436 K)

[2] : Reliability improvements in passive components, Pages 1279-1288
Per-Olof Fägerholt
Lien : vide.pdf - Format-PDF (689 K)

[3] : An Extrapolation Model for Lifetime Prediction for Off-State ¯ Degradation of MOS-FETs, Pages 1289-1293
A. Muehlhoff
Lien : vide.pdf - Format-PDF (235 K)

[4] : Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions, Pages 1295-1300
F. Monsieur, E. Vincent, D. Roy, S. Bruyere, G. Pananakakis and G. Ghibaudo
Lien : private/MONSIEUR.pdf - Format-PDF (375 K)

  [1] :  [PAP376]  F. MONSIEUR, E. VINCENT, D. ROY, S. BRUYERE, G.PANANAKAKIS, G. GHIBAUDO, Determination of dielectric breakdown Weibull distribution parameters confidence bounds for accurate ultrathin oxide reliability predictions, ESREF'2001, pp. 1295-1300.

[5] : Analysis of retention tail distribution induced by scaled shallow trench isolation for high densityDRAMs, Pages 1301-1305
Young Pil Kim, Beom Jun Jin, Young Wook Park, Joo Tae Moon and Sang U. Kim
Lien : vide.pdf - Format-PDF (295 K)

[6] : Hot-Carrier Reliability for Si and SiGe HBTs: Aging Procedure, Extrapolation Model Limitations and Applications, Pages 1307-1312
N. Revil and X. Garros
Lien : vide.pdf - Format-PDF (388 K)

[7] : Injection Mechanisms and Lifetime Prediction with the Substrate Voltage in 0.15m Channel-Length N-MOSFETs, Pages 1313-1318
A. Bravaix, D. Goguenheim, N. Revil and E. Vincent
Lien : vide.pdf - Format-PDF (401 K)

[8] : Substrate Engineering to Improve Soft-Error-Rate Immunity for SRAM Technologies, Pages 1319-1324
H. Puchner, Y. -C. Liu, W. Kong, F. Duan and R. Castagnetti
Lien : vide.pdf - Format-PDF (514 K)

[9] : Improved Stability of Large Area Excimer Laser Crstallised Polysilicon Thin Film Transistors under DC and AC Operating, Pages 1325-1329
H. Toutah, J. F. Llibre, B. Tala-Ighil, T. Mohammed-Brahim, Y. Helen, G.
Gautier and O. Bonnaud
Lien : vide.pdf - Format-PDF (302 K)

[10] : Wafer Level Accelerated test for ionic contamination control on VDMOS transistors in Bipolar/CMOS/DMOS, Pages 1331-1334
Y. Rey-Tauriac, M. Taurin and O. Bonnaud
Lien : vide.pdf - Format-PDF (355 K)

[11] : Polysilicon oxide quality optimization at Wafer level of a Bipolar/CMOS/DMOS technology, Pages 1335-1340
X. Gagnard, Y. Rey-Tauriac and O. Bonnaud
Lien : vide.pdf - Format-PDF (416 K)

[12] : Reliability of polycrystalline silicon thin film resistors, Pages 1341-1346
M. Nakabayashi, H. Ohyama, E. Simoen, M. Ikegami, C. Claeys, K. Kobayashi, M. Yoneoka and K. Miyahara
Lien : vide.pdf - Format-PDF (395 K)

[13] : Anode hole generation mechanisms, Pages 1347-1354
A. Ghetti, M. Alam and J. Bude
Lien : vide.pdf - Format-PDF (515 K)

[14] : Creation and thermal annealing of interface states induced by uniform or
localized injection in 2.3nm thick oxides., Pages 1355-1360
D. Zander, F. Saigné and A. Meinertzhagen
Lien : vide.pdf - Format-PDF (388 K)

[15] : Low frequency noise and reliability properties pf 0.12 m CMOS devices with
Ta2O5 as gate dielectrics, Pages 1361-1366
M. Fadlallah, A. Szewczyk, C. Giannakopoulos, B. Cretu, F. Monsieur, T.
Devoivre, J. Jomaah and G. Ghibaudo
Lien : vide.pdf - Format-PDF (295 K)

[16] : Failures in ultrathin oxides: Stored energy or carrier energy driven?,
Pages : 1367-1372
S. Bruyére, F. Monsieur, D. Roy, E. Vincent and G. Ghibaudo
Lien : vide.pdf - Format-PDF (392 K)

[17] : Mechanisms of positive gate bias stress induced instabilities in power
VDMOSFETs, Pages 1373-1378
N. Stojadinovic, I. Manic, S. Djoric-Veljkovic, V. Davidovic, S. Golubovic
and S. Dimitrijev
Lien : vide.pdf - Format-PDF (412 K)

[18] : ESD-Induced Circuit Performance Degradation in RFICs, Pages 1379-1383
K. Gonf, H. G. Feng, R. Y. Zhan and A. Z. Wang
Lien : vide.pdf - Format-PDF (353 K)

[19] : Effect of pulse risetime on trigger homogeneity in single finger grounded
gate nMOSFET electrostatic discharge protection devices, Pages 1385-1390
M. Litzenberger, R. Pichler, S. Bychikhin, D. Pogany, E. Gornik, K. Esmark
and H. Gossner
Lien : vide.pdf - Format-PDF (387 K)

[20] : The time-voltage trade-off for ESD damage threshold in amorphous silicon
hydrogenated thin-film transistors, Pages 1391-1396
N. Toi Golo, S. van der Wal, F. G. Kuper and T. Mouthaan
Lien : vide.pdf - Format-PDF (383 K)

[21] : Relevance of contact reliability in HBM-ESD test equipment, Pages
1397-1401
Joachim C. Reiner and Thomas Keller
Lien : vide.pdf - Format-PDF (434 K)

[22] : Non Contact Surface Potential Measurements for Charging Reduction During
Manufacturing of Metal-Insulator-Metal Capacitors, Pages 1403-1407
J. Ackaert, Z. Wang, E. De Backer, P. Colson and P. Coppens
Lien : vide.pdf - Format-PDF (768 K)

[23] : Electromigration Performance of Multi-level Damascene Copper
Interconnects, Pages 1409-1416
S. Yokogawa, N. Okada, Y. Kakuhara and H. Takizawa
Lien : vide.pdf - Format-PDF (767 K)

[24] : An overview of hot-carrier induced degradation in 0.25 m Partially and
Fully Depleted SOI N-MOSFET's, Pages 1417-1420
F. Dieudonné, F. Daugé, J. Jomaah, C. Raynaud and F. Balestra
Lien : vide.pdf - Format-PDF (260 K)

[25] : Stress induced leakage current at low field in ultra thin oxides, Pages
1421-1425
F. Lime, G. Ghibauda and G. Guégan
Lien : vide.pdf - Format-PDF (260 K)

[26] : Electric passivation of interface traps at drain junction space charge
region in p-MOS transistors, Pages 1427-1431
G. Chen, M. F. Li and Y. Jin
Lien : vide.pdf - Format-PDF (304 K)

[27] : Simulation and experimental comparison of GGNMOS and LVTSCR protection
cells under ElectroStatic Discharges, Pages 1433-1437
A. Guilhaume, P. Galy, JP. Chante, B. Foucher and F. Blanc
Lien : vide.pdf - Format-PDF (394 K)

[28] : High-resolution in-situ of gold electromigration: test time reduction,
Pages : 1439-1442
K. Croes, R. Dreesen, J. Manca, W. De Ceuninck, L. De Schepper, L.
Tielemans and P. van Der Wel
Lien : vide.pdf - Format-PDF (216 K)

[29] : Radiation damages of polycrystalline silicon films and npn Si transistors
by high-energy particle irradiation, Pages 1443-1448
H. Ohyama, M. Nakabayashi, E. Simoen, C. Claeys, T. Tanaka, T. Hirao, S.
Onada and K. Kobayashi
Lien : vide.pdf - Format-PDF (335 K)

[30] : Application of Scanning Probe Microscopy techniques in Semiconductor
Failure Analysis, Pages 1449-1458
B. Ebersberger, A. Olbrich and C. Boit
Lien : vide.pdf - Format-PDF (961 K)

[31] : Diamond-Coated Cantilevers for Scanning Capacitance Microscopy
Applications, Pages 1459-1463
H. Yabuhara, M. Ciappa and W. Fichtner
Lien : vide.pdf - Format-PDF (321 K)

[32] : Why hot carrier emission based timing probes will work for 50 nm, 1V CMOS technologies, Pages 1465-1470
J. C. Tsang and M. V. Fischetti
Lien : vide.pdf - Format-PDF (423 K)

[33] : Front Side and Backside OBIT Mappings applied to Single Event Transient Testing, Pages 1471-1476
D. Lewis, V. Pouget, T. Beauchêne, H. Lapuyade, P. Fouillat, A. Touboul,
F. Beaudoin and P. Perdu
Lien : vide.pdf - Format-PDF (551 K)

  [1] :  [PAP366]  D. Lewis, V. Pouget, T. Beauchene, H. Lapuyade, A. Touboul, F. Beaudoin, P. Perdu, Backside and front side picosecond OBIT mapping on ICs, Application for single event transient studies, ESREF'2001, pp. 1471-1476

[34] : Modeling Thermal Laser Stimulation, Pages 1477-1482
F. Beaudoin, X. Chauffleur, J. P. Fradin, P. Perdu, R. Desplats and D. Lewis
Lien : vide.pdf - Format-PDF (443 K)

[35] : Coaxial Ion-Photon System, Pages 1483-1488
C. -C. Tsao, Q. S. Wang, P. Bouchet and P. Sudraud
Lien : vide.pdf - Format-PDF (494 K)

[36] : Development of an EB/FIB Integrated Test System, Pages 1489-1494
Katsuyoshi Miura, Koji Nakamae and Hiromu Fujioka
Lien : vide.pdf - Format-PDF (382 K)

[37] : A New Versatile Testing Interface for Failure Analysis in Integrated
Circuits, Pages 1495-1499
Romain Desplats, Philippe Perdu and Felix Beaudoin
Lien : vide.pdf - Format-PDF (394 K)

[38] : Thermal and free carrier laser interferometric mapping and failure
analysis of anti-serial smart power ESD protection structures, Pages
1501-1506
S. Bychikhin, M. Litzenberger, R. Pichler, D. Pogany, E. Gornik, G. Groos
and M. Stecher
Lien : vide.pdf - Format-PDF (378 K)

[39] : Unique and Practical IC Timing Analysis Tool Utilizing Intrinsic Photon
Emission, Pages 1507-1512
Norman Goldblatt, Martin Leibowitz and William Lo
Lien : vide.pdf - Format-PDF (525 K)

[40] : Theoretical Investigation of an Equivalent Laser LET, Pages 1513-1518
V. Pouget, H. Lapuyade, P. Fouillat, D. Lewis and S. Buchner
Lien : vide.pdf - Format-PDF (461 K)

[41] : Analysis of high-power devices using proton beam induced charge
microscopy, Pages 1519-1524
M. Zmeck, J. Phang, A. Bettiol, T. Osipowicz, F. Watt, L. Balk, F. -J.
Niedernostheide, H. -J. Schulze, E. Falck and R. Barthelmess
Lien : vide.pdf - Format-PDF (577 K)

[42] : Evaluation method for the control of process induced defect in deep
sub-micron device fabrication, Pages 1525-1533
Kazuko Ikeda
Lien : vide.pdf - Format-PDF (836 K)

[43] : A reliable course of Scanning Capacitance Microscopy analysis applied for
2D-Dopant Profilings of Power MOSFET Devices, Pages 1535-1537
M. Leicht, G. Fritzer, B. Basnar, S. Golka and J. Smoliner
Lien : vide.pdf - Format-PDF (196 K)

[44] : Backside Localization of Current Leakage Faults Using Thermal Laser
Stimulation, Pages 1539-1544
R. Desplats, F. Beaudoin, P. Perdu, P. Poirier, D. Tremouilles, M. Bafleur
and D. Lewis
Lien : vide.pdf - Format-PDF (604 K)

[45] : Ultra-Thinning of C4 Integrated Circuits for Backside Analysis during
First Silicon Debug, Pages 1545-1549
T. Lundquist, E. Delenia, J. Harroun, E. LeRoy and C. -C. Tsao
Lien : vide.pdf - Format-PDF (292 K)

[46] : A Novel Application of the FIB Lift-out Technique for 3-D TEM Analysis,
Pages : 1551-1556
Jon C. Lee, David Su and J. H. Chuang
Lien : vide.pdf - Format-PDF (620 K)

[47] : Silicon Thinning and Polishing on Packaged Devices, Pages 1557-1561
F. Beaudoin, P. Perdu, R. Desplats, S. Rigo and D. Lewis
Lien : vide.pdf - Format-PDF (479 K)

[48] : Introduction of InP high speed electronics into optical fiber transmission
systems and current technological limits, Pages 1563-1566
A. Scavennec
Lien : vide.pdf - Format-PDF (273 K)

[49] : Defect detection and modelling using pulsed electrical stress for
reliability investigations of InGaP HBT, Pages 1567-1571
C. Sydlo, B. Mottet, H. Ganis, H. L. Hartnagel, V. Krozer, S. L. Delage,
S. Cassette, E. Chartier, D. Floriot and S. Bland
Lien : vide.pdf - Format-PDF (334 K)

[50] : Evolution of LF noise in Power PHEMT's submitted to RF and DC Step
Stresses, Pages 1573-1578
B. Lambert, N. Malbert, N. Labat, F. Verdier, A. Touboul, P. Huguet, R.
Bonnet and G. Pataut
Lien : vide.pdf - Format-PDF (366 K)

[51] : Long Term Stability of InGaAs/AlInAs/GaAs Methamorphic HEMTs, Pages
1579-1584
G. Meneghesso, A. Chini and E. Zanoni
Lien : vide.pdf - Format-PDF (358 K)

[52] : Gate-lag effects in AlGaAs/GaAs power HFET's, Pages 1585-1589
M. Borgarino, G. Sozzi, A. Mazzanti and G. Verzellesi
Lien : vide.pdf - Format-PDF (288 K)

[53] : Determination of the thermal resistance and current exponent of
heterojunction bipolar transistors for reliability evaluation, Pages
1591-1596
R. Petersen, W. De Ceuninck, L. De Schepper, O. Vendier, H. Blanck and D.
Pons
Lien : vide.pdf - Format-PDF (304 K)

[54] : Laser diode COFD analysis by thermoreflectance microscopy, Pages 1597-1601
Stefan Dilhaire, Stéphane Grauby, Sébastien Jorez, Luis-David Patino
Lopez, Emmanuel Schaub and Wilfrid Claeys
Lien : vide.pdf - Format-PDF (305 K)

[55] : Damp Heat test on LiNbO optical modulators, Pages 1603-1607
P. Furcas, R. De Palo, M. E. Patella, G. Salmini and M. Vanzi
Lien : vide.pdf - Format-PDF (468 K)

[56] : Investigation on ESD-stressed GaN/InGaN-on-sapphire blue LEDs, Pages
1609-1614
G. Meneghesso, S. Podda and M. Vanzi
Lien : vide.pdf - Format-PDF (608 K)

[57] : Environmental Effects on Interfacial Adhesion, Pages 1615-1624
M. W. Lane, J. M. Snodgrass and R. H. Dauskardt
Lien : vide.pdf - Format-PDF (699 K)

[58] : Three-Dimensional Voids Simulation in chip Metallization Structures: a
Contribution to Reliability Evaluation, Pages 1625-1630
D. Dalleau and K. Weide-Zaage
Lien : vide.pdf - Format-PDF (495 K)

[59] : Reliability Studies on Multilevel Interconnection with Intermetal
Dielectric Air Gaps, Pages 1631-1635
V. Sukharev, B. P. Shieh, R. Choudhury, C. Park and K. C. Saraswat
Lien : vide.pdf - Format-PDF (331 K)

[60] : Thermomechanical stress analysis of Cu/low-k dielectric interconnect
schemes, Pages 1637-1641
Alan Mathewson, Carlos Gonzales Montes De Oca and Sean Foley
Lien : vide.pdf - Format-PDF (297 K)

[61] : Thermal fatigue in solder joints of Ag-Pd and Ag-Pt metallized LTCC
modules, Pages 1643-1648
R. Rautioaho, O. Nousiainen, S. Leppävuori, J. Lenkkeri and T. Jaakola
Lien : vide.pdf - Format-PDF (520 K)

[62] : RF Packaging for Space Applications: from Micropackage to SOP ¯ "System On
a Package", Pages 1649-1656
Claude Drevon
Lien : vide.pdf - Format-PDF (654 K)

[63] : Mechanical Reliability of MEMS-structures under shock load, Pages
1657-1662
U. Wagner, J. Franz, M. Schweiker, W. Bernhard, R. Müller-Fiedler, B.
Michel and O. Paul
Lien : vide.pdf - Format-PDF (773 K)

[64] : Thermal management and reliability of multi-chip power modules, Pages
1663-1669
G. Lefranc, G. Mitic and H. -J. Schultz
Lien : vide.pdf - Format-PDF (693 K)

[65] : Integrated power transistor size optimisation, Pages 1671-1676
J. M. Bosc
Lien : vide.pdf - Format-PDF (355 K)

[66] : Operation of power semiconductors under transient thermal conditions:
thermal fatigue reliability and mechanical aspects, Pages 1677-1682
S. Forster, T. Lequeu and R. Jérisian
Lien : vide.pdf - Format-PDF (492 K)

  [1] :  [ART163]  S. FORSTER, T. LEQUEU, R. JERISIAN, Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects, Microelectronics Reliability, Volume 41, Issues 9-10, September - October 2001, pp. 1677-1682.
  [2] :  [PAP370]  S. FORSTER, T. LEQUEU, R. JERISIAN, Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects, ESREF'2001, pp. 1677-1682.

[67] : ESD protection structures for BCD5 smart power technologies, Pages
1683-1687
L. Sponton, L. Cerati, G. Croce, F. Chrappan, C. Contiero, G. Meneghesso
and E. Zanoni
Lien : vide.pdf - Format-PDF (354 K)

[68] : Reliability of non-hermetic pressure contact IGBT modules, Pages 1689-1694
R. Schlegel, E. Herr and F. Richter
Lien : private/RICHTER.pdf - 6 pages, 573 Ko.

  [1] :  [ART242]  R. SCHLEGEL, E. HERR, F. RICHTER, Reliability of non-hermetic pressure contact IGBT modules,  Microelectronics Reliability, Volume 41, No. 9-10, September/October 2001, pp. 1689-1694.
  [2] :  [PAP371]  R. Schlegel, E. Herr, F. Richter, Reliability of non-hermetic pressure contact IGBT modules, ESREF'2001, pp. 1689-1694

[69] : Power module lifetime estimation from chip temperature direct measurement
in an automotive traction inverter, Pages 1695-1700
G. Coquery, S. Carubelli, J. P. Ousten, R. Lallemand, F. Lecoq, D.
Lhotellier, V. de Viry and Ph. Dupuy
Lien : vide.pdf - Format-PDF (435 K)

[70] : A pragmatic methodology for the monitoring of the electronic components
ageing: The case of power thyristors at EDF, Pages 1701-1705
G. Simon and G. Guffroy
Lien : vide.pdf - Format-PDF (327 K)

[71] : High reliability power VDMOS Transistors in Bipolar/CMOS/DMOS technology,
Pages : 1707-1712
Y. Rey-Tauriac, M. Taurin and O. Bonnaud
Lien : vide.pdf - Format-PDF (304 K)

[72] : A Novel Power Module Design and Technology for Improved Power Cycling Capability, Pages 1713-1718
U. Scheuermann and E. Herr
Lien : vide.pdf - Format-PDF (383 K)

[73] : Reliability of Chip/DCB Solder Joints in AlSiC Base Plate Power Modules: Influence of Chip Size, Pages 1719-1723
M. Thoben, X. Xie, D. Silber and J. Wilde
Lien : vide.pdf - Format-PDF (394 K)

[74] : Non-destructive tester for single event burnout of power diodes, Pages 1725-1729
G. Busatto, F. Iannuzzo, F. Velardi and J. Wyss
Lien : vide.pdf - Format-PDF (334 K)

[75] : Local lifetime control IGBT structures: turn-off performances comparison for hard- and soft-switching between 1200V trench and new planar PT-IGBTs, Pages 1731-1736
S. Azzopardi, A. Kawamura, H. Iwamoto, O. Briat, J. M. Vinassa, E. Woirgard and C. Zardini
Lien : private/AZZOPARDI5.pdf - Format-PDF (411 K)

  [1] :  [ART557]  S. AZZOPARDI, A. KAWAMURA, H. IWAMOTO, O. BRIAT, J.M. VINASSA, E. WOIRGARD, C. ZARDINI, Local lifetime control IGBT structures : Turn-off performances comparison for hard- and soft-switching between 1200V trench PT- and new planar PT-IGBTs, Microelectro

[76] : Contents, Pages iii-viii
Lien : vide.pdf - Format-PDF (201 K)

[77] : Editorial, Page ix
Lien : vide.pdf - Format-PDF (64 K)

[78] : Author index, Pages I-III
Lien : vide.pdf - Format-PDF (83 K)

Mise à jour le lundi 10 avril 2023 à 18 h 56 - E-mail : thierry.lequeu@gmail.com
Cette page a été produite par le programme TXT2HTM.EXE, version 10.7.3 du 27 décembre 2018.

Copyright 2023 :

Les informations contenues dans cette page sont à usage strict de Thierry LEQUEU et ne doivent être utilisées ou copiées par un tiers.
Powered by www.google.fr, www.e-kart.fr, l'atelier d'Aurélie - Coiffure mixte et barbier, La Boutique Kit Elec Shop and www.lequeu.fr.