Revue : [REVUE170]
Titre : Elsevier Science, Microelectronics Reliability, Vol. 40, Issue 11, pp. 1773-1980, November 2000.
Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.
Volume : 40
Issue : 11
Pages : 1773-1980
Date : November 2000
1 : Page 1773 : Charles Chee SuryaHei Wong
2 : A general model of 1/f noise, Pages 1775-1780
Bruno Pellegrini
3 : Models for generation 1/f noise, Pages 1781-1785
B. Kaulakys and T. Mekauskas
4 : On the intrinsic origin of 1/f noise, Pages 1787-1790
B. Kaulakys
5 : Modeling of current transport and 1/f noise in heterojunction bipolar transistors, Pages 1791-1798
Hilmi Ünlü
6 : Driven Lorentz gas with 1/fk noise, Pages 1799-1802
Juraj Kumiák
7 : Hot-electron velocity fluctuations in two-dimensional electron gas channels, Pages 1803-1814
A. Matulionis, V. Aninkeviius and J. Liberis
SummaryPlus | Article | Journal Format-PDF (671 K)
8 : Impact of advanced processing modules on the low-frequency noise performance of deep-submicron CMOS technologies, Pages 1815-1821
C. Claeys and E. Simoen
SummaryPlus | Article | Journal Format-PDF (236 K)
9 : Effects of quantization on random telegraph signals observed in deep-submicron MOSFETs, Pages 1823-1831
Zeynep Çelik-Butler and Fang Wang
SummaryPlus | Article | Journal Format-PDF (184 K)
10 : Noise in nanotechnology, Pages 1833-1837
L. B. Kish and C. G. Granqvist
SummaryPlus | Article | Journal Format-PDF (146 K)
11 : Measurements of 1/f noise amplitude modulated by a large-signal carrier in bipolar junction transistors, Pages 1839-1845
Juan E. Sanchez and Gijs Bosman
SummaryPlus | Article | Journal Format-PDF (205 K)
12 : Current crowding and its effect on 1/f noise and third harmonic distortion - a case study for quality assessment of resistors, Pages 1847-1853
E. P. Vandamme and L. K. J. Vandamme
SummaryPlus | Article | Journal Format-PDF (216 K)
13 : Low frequency noise in complementary npn and pnp polysilicon emitter bipolar junction transistors, Pages 1855-1861
M. Jamal Deen and S. Rumyantsev
SummaryPlus | Article | Journal Format-PDF (153 K)
14 : Decreased low frequency noise by hydrogen passivation of polysilicon emitter bipolar transistors, Pages 1863-1867
Martin Sandén, B. Gunnar Malm, Jan V. Grahn and Mikael Östling
SummaryPlus | Article | Journal Format-PDF (214 K)
15 : Comparison of low frequency noise and high frequency performances of double and simple polysilicon Bi-CMOS BJT, Pages 1869-1874
C. Delseny, A. Pénarier, F. Pascal, S. G. Jarrix and P. Llinares
SummaryPlus | Article | Journal Format-PDF (314 K)
16 : Characterization of oxide traps in 0.15 m2 MOSFETs using random telegraph signals, Pages 1875-1881
Nuditha Vibhavie Amarasinghe, Zeynep Çelik-Butler and Petr Vasina
SummaryPlus | Article | Journal Format-PDF (128 K)
17 : Characterization of generationŻrecombination noise using a physics-based device noise simulator, Pages 1883-1886
Fan-Chi Hou, Gijs Bosman and Mark E. Law
SummaryPlus | Article | Journal Format-PDF (156 K)
18 : Random telegraph noise and leakage current in smart power technology DMOS devices, Pages 1887-1890
D. Pogany, E. Gornik, M. Stecher and W. Werner
SummaryPlus | Article | Journal Format-PDF (396 K)
19 : Low-frequency noise in low temperature unhydrogenated polysilicon thin film transistors, Pages 1891-1896
A. Mercha, J. Rhayem, L. Pichon, M. Valenza, J. M. Routoure, R. Carin, O. Bonnaud and D. Rigaud
SummaryPlus | Article | Journal Format-PDF (361 K)
20 : Low frequency noise in SiGe-base heterojunction bipolar transistors and SiGe-channel metal oxide semiconductor field effect transistors, Pages 1897-1903
J. A. Chroboczek and G. Ghibaudo
SummaryPlus | Article | Journal Format-PDF (288 K)
21 : Study of the effects of rapid thermal annealing in generation/recombination noise in MBE grown GaN thin films, Pages 1905-1909
C. Surya, C. F. Zhu, B. H. Leung, W. K. Fong, C. C. Cheng and J. K. O.Sin
Abstract | Journal Format-PDF (101 K)
22 : Hooge parameter of InGaAs bulk material and InGaAs 2DEG quantum well structures based on InP substrates, Pages 1911-1914
Jürgen Berntgen, Alexander Behres, Jürgen Kluth, Klaus Heime, Walter Daumann, Uwe Auer and Franz-Josef Tegude
SummaryPlus | Article | Journal Format-PDF (135 K)
23 : Low frequency noise in gate and drain of PHEMT's and related correlation, Pages 1915-1920
J. C. Vildeuil, M. Valenza and D. Rigaud
SummaryPlus | Article | Journal Format-PDF (391 K)
24 : Dependence of Hooge parameter of InAs heterostructure on temperature, Pages 1921-1924
M. Tacano, M. Ando, I. Shibasaki, S. Hashiguchi, J. Sikula and T. Matsui
SummaryPlus | Article | Journal Format-PDF (118 K)
25 : Electrical noise of laser diodes measured over a wide range of bias currents, Pages 1925-1928
X. Y. Chen, A. Pedersen, O. G. Hellesř and A. D. van Rheenen
SummaryPlus | Article | Journal Format-PDF (152 K)
26 : Experimental determination of the kurtosis of RF noise in microwave low-noise devices, Pages 1929-1935
Fabio Principato and Gaetano Ferrante
SummaryPlus | Article | Journal Format-PDF (185 K)
27 : Noise optimisation for the design of a reliable high speed X-ray readout integrated circuit, Pages 1937-1942
E. F. Tsakas and A. N. Birbas
SummaryPlus | Article | Journal Format-PDF (100 K)
28 : 1/f phase noise in a transistor and its application to reduce the frequency fluctuation in an oscillator, Pages 1943-1950
Keiji Takagi, Seiichi Serikawa and Atsushi Okuno
Abstract | Journal Format-PDF (167 K)
29 : Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors, Pages 1951-1954
T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
SummaryPlus | Article | Journal Format-PDF (96 K)
30 : Simulation of electromigration noise in polycrystalline metal stripes, Pages 1955-1958
S. Di Pascoli and G. Iannaccone
SummaryPlus | Article | Journal Format-PDF (669 K)
31 : The low frequency noise in HFETs estimates the effect of electrical stress, Pages 1959-1963
Ognian Marinov
Abstract | Journal Format-PDF (346 K)
32 : Optimum design in a JFET for minimum generationŻrecombination noise, Pages 1965-1968
A. Godoy, J. A. Jiménez-Tejada, A. Palma and J. E. Carceller
SummaryPlus | Article | Journal Format-PDF (136 K)
33 : Skewness and kurtosis of 1/f noise in semiconductor devices, Pages 1969-1973
Fabio Principato and Gaetano Ferrante
SummaryPlus | Article | Journal Format-PDF (156 K)
34 : The influence of a digital spectrum analyzer on the uncertainty in 1/f noise parameters, Pages 1975-1980
J. Briaire and L. K. J. Vandamme
Abstract | Journal Format-PDF (215 K)
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