Article : [PAP370]

Titre : S. FORSTER, T. LEQUEU, R. JERISIAN, Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects, ESREF'2001, pp. 1677-1682.

Cité dans : [ART163]  S. FORSTER, T. LEQUEU, R. JERISIAN, Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects, Microelectronics Reliability, Volume 41, Issues 9-10, September - October 2001, pp. 1677-1682.
Cité dans : [DATA227] ESREF'2001, 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Arcachon, France , 1-5 octobre 2001.
Cité dans : [DATA033] Liste des publications de Thierry LEQUEU et activités de recherche, octobre 2022.
Cité dans : [PAP360]  T. LEQUEU, Les tests en fiabilité, rapport interne LMP, novembre 2001.
Cité dans :[REVUE279] Elsevier Science, Microelectronics Reliability, Volume 41, Issues 9-10, Pages 1273-1736, September - October 2001.

Adresse : (1) LMP-STMicroelectronics, (2) CLOES - France
Source : ESREF'2001 - 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Arcachon - France.
Date : 1-5 octobre 2001
Site : http://www.elsevier.com/locate/microrel
Page : 1677 - 1682
Lien : private/FORSTER2.pdf - 6 pages, 100 Ko.

Abstract :
The authors explain the degradation mechanism of a TRIAC submitted to the application of strong di/dt during
the commutation at turn-on. The analysis is based on the evaluation of the thermo-mechanical forces concerned
in the Initially Turned on Area of the TRIAC in quadrant Q2. A mathematical expression is established giving
the number of commutations cycles before failure that the component can withstand. This expression is made
profitable to evaluate the reliability of the TRIAC.

Bibliographie

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