E. SPAHN, G. BUDERER, J. WEY, V. WEGNER, F. JAMET, "The use of thyristors as main switches in EML applications", IEEE Transactions on Magnetics, Jan. 1993, Vol. 29, Issue: 1, Part: 2, pp. 1060-1065.
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Titre : E. SPAHN, G. BUDERER, J. WEY, V. WEGNER, F. JAMET, The use of thyristors as main switches in EML applications, IEEE Transactions on Magnetics, Jan. 1993, Vol. 29, Issue: 1, Part: 2, pp. 1060-1065.

Cité dans :[SHEET490]
Auteur : Spahn, E.
Auteur : Buderer, G.
Auteur : Wey, J.
Auteur : Wegner, V.
Auteur : Jamet, F - French-German Res. Inst. of Saint-Louis, France

Stockage : Thierry LEQUEU
Lien : private/SPAHN1.pdf - 549 Ko, 6 pages.
Source : Magnetics, IEEE Transactions on
Pages : 1060 - 1065
Date : Jan. 1993
Volume : 29
Issue : 1
Part : 2
ISSN : 0018-9464
References : 8
CODEN : IEMGAQ
Accession_Number : 4424350

Abstract :
The authors studied the application of conventional, bipolar
thyristors with different finger gate structures as current
switches in electromagnetic launchers (EMLs). The experiments
showed that the bipolar thyristors have to have a fine structured
gate to be able to switch a high current within a short time
(high dI/dt). The authors succeeded in switching currents of 90
kA with a maximum dI/dt of 550 A/ mu s and a blocking voltage up
to 6.5 kV within 0.26 ms. Results obtained with serial and
parallel configurations of conventional thyristors are also
reported. If steps are taken to distribute the voltage equally,
the devices in series work well. In parallel configurations an
equal current distribution can be realized by giving each
thyristor its own current source. With such a configuration of
four parallel thyristors, it was possible to achieve switching
currents of 160 kA within 0.25 ms. The blocking voltage was 4.2
kV and dI/dt was 250 A/ mu s.

Subject_terms :
equal voltage distribution; series configurations; bipolar
thyristors; finger gate structures; current switches;
electromagnetic launchers; parallel configurations; equal current
distribution; 90 kA; 6.5 kV; 0.26 ms; 16 kA; 4.2 kV; 0.25 ms;
electromagnetic launchers; switches; thyristor applications


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