JOURNAL DE PHYSIQUE III, Vol. 7, July 1997

CONTENTS

Extended Defects in Semiconductors (First Part)

Foreword.
B. PICHAUD, S. PIZZINI, A. CAVALLINI and G. VANDERSCHAEVE

An Ab Initio Study of the Partial Dislocation Core in Diamond.
P.K. SITCH, R. JONES, S. Öberg and M.I. HEGGIE

Deep-Level Transient-Spectroscopy for Localized States at Extended Defects in Semiconductors.
H. HEDEMANN and W. SCHRÖTER

Energy Levels Associated with Extended Defects in Plastically Deformed n-Type Silicon.
D. CAVALCOLI, A. CAVALLINI and E. GOMBIA

Conductivity and Photoconductivity at Dislocations (Overview Article).
R. LABUSCH

Non-Destructive Techniques for Identification and Control of Processing Induced Extended Defects in Silicon and Correlation with Device Yield.
J. VANHELLEMONT, S. MILITA, M. SERVIDORI, V. HIGGS, G. KISSINGER, E. GRAMENOVA, E. SIMOEN and P. JANSEN

Mechanical Properties and Dislocation Dynamics in III-V Compounds.
I. YONENAGA

High Resolution Electron Microscopic Studies of the Atomistic Glide Processes in Semiconductors.
K. MAEDA, M. INOUE, K. SUZUKI, H. AMASUGA, M. NAKAMURA and E. KANEMATSU

Electrical and Structural Properties of Oxygen-Precipitation Induced Extended Defects in Silicon.
C. CLAEYS, E. SIMOEN and J. VANHELLEMONT

Passivation of Extended Defects in Silicon by Catalytically Dissociated Molecular Hydrogen.
S. BINETTI, S. BASU, C. SAVIGNI, M. ACCIARRI and S. PIZZINI

Interaction of Copper with Dislocations in GaAs.
H.S. LEIPNER, R. SCHOLZ, F. SYROWATKA, H. UNIEWSKI and J. SCHREIBER

Localization of Y Luminescence at Glide Dislocations in Cadmium Telluride.
S. HILDEBRandT, H. UNIEWSKI, J. SCHREIBER and H.S. LEIPNER

Aharonov-Bohm Interference of Holes at Dislocations in Lattice-Mismatched Heterostructures.
T. FIGIELSKI, T. WOSINSKI and A. MAKOSA

Regular Papers

Materials Science

Metal-n-InP Rectifying Properties Enhancement with Zn Based Metallizations and Diffusion at Moderate Annealing Temperatures.
F. BARBARIN, C. GUILLOT, J. ACHARD, M. DUGAY, B. LAURON and D.Z. KIM

Instrumentation

Thermal Drifts of Microelectronic Capacitive Pressure Sensor (text in French).
A. ETTOUHAMI, A. ESSAID, N. OUAKRIM, L. MICHEL and M. LIMOURI

Physics of Electronic Devices

Homogenization of Materials Used in All-Film Metallized Capacitors (text in French).
Ch. JOUBERT, G. ROJAT and A. BÉROUAL

Physics of Fluids and Mechanics

Acoustic Wave Refraction in a Plasma Torch (text in French).
R. PAUVIT, CH. DE IZARRA and O. VALLÉE

Predict Performance and Testing of a Small Stirling Cooling Machine (text in French).
Ph. NIKA and F. LANZETTA

Physics of Energy Transfers

Simulations and Optimization of Thermochemical Transfers within Solid-Gas Reactor (text in French).
A. FORESTIER, P. FORGES and M. AMOUROUX

Synthesis of the Command of a Current Inverter (text in French).
J.P. CAMBRONNE and J.P. HAUTIER