The aim is to continue this well-established series of successful conferences to provide an annual forum for the presentation and discussion of recent advances and developments in physics, technology, modelling and characterisation of solid-state devices. It is the purpose to provide a well-balanced mixture of contributions of high academic and of industrial relevance. The pervasive nature of solid state device microelectronics will be reflected in the broad variety of topics covered in plenary and invited sessions as well as important coverage of the latest developments in silicon and compound semiconductor devices and technology, process and device modelling and characterisation, interconnect and integrated passive components technology, packaging, displays and transducers.

The main themes for ESSDERC 2000 are:

CMOS Devices and Reliability
Deep submicron scaling issues, device physics, performance of MOS structures, SOI device issues, low and high temperature operation, hot carrier effects, gate dielectric relaibility, ESD, process induced damage, EMI, noise, electrical characterisation techniques.

Compound Semiconductors and Quantum Devices
FET's, HBT's, LED's, lasers, modulators, photodetectors, microwave devices, quantum devices, single electron and ballistic effects, optoelectronic materials and integration, nanoelectronics, molecular devices.

Microsystems and Packaging
Active displays, display device technologies, field emission devices, polycrystalline TFTs, CCD, CMOS imagers, radiation sensors, infra-red sensors, physical sensors and actuators (pressure, temperature, acceleration, etc.), microfluidics, uTAS, biochemical sensors and array technology, IC, sensor and microsystems packaging issues.

Interconnect and Integrated Passives
Interconnect technology, conductor systems, low-k interlevel dielectrics, planarisation, systems for multi-level interconnects, optical interconnect, interconnect reliability (electromigration, stress migration), multichip modules, integrated passives for RF, e.g. inductors, RF MEMS, high Q components, transformers.

Process and Device Modelling and Simulation

2D and 3D silicon and compound semiconductor process and device modelling, modelling of isolation, interconnects, physical device models, yield models, parameter extraction, mixed electrical-thermal modelling and simulation.

Silicon Based Solid State Devices
Bipolar devices, smart-power devices and IC's, low voltage/low power devices, high voltage and power devices, DMOS, IGBT, single electron devices, SiGe and SiC devices, quantum and ballistic effect, low temperature operation, novel devices and principles of operation.

Silicon Integrated Technology and Manufacturing
Advances in integration for ULSI, bipolar, SOI, memory (dynamic, static, NV, novel types), ASICs, MPU, multi-function IC's low voltage, low power, analogue, digital, mixed signal, RF, patterning techniques, shallow junctions, RTP, isolation, silicidation, thin dielectrics, high epsilon and novel materials, cleaning issues, physical and structural characterisation, surface preparation, module optimisation, defect control, equipment modelling, equipment issues, monitoring, metrology.

The deadline for receipt of contributions is 7 April 2000.
The deadline for receipt of invited papers is 8 May 2000.