Session 3: Fault Localisation
Wednesday 03.10.2000, Room 3
| Chairmen: | W. Claeys (University Bordeaux I, France) R. Cramer (ALTIS Semiconductor, Paris, France) |
| 8:30 | IP |
Backside Failure Analysis of CMOS circuits using Picosecond Imaging
Circuit Analysis (PICA) J. Kash, M. McManus (IBM Yorktown Heights, USA) |
| 9:10 | 3.1 |
Study of triggering inhomogenities in gg-nMOS ESD protection devices via
thermal mapping using backside laser interferometry M. Litzenberger, K. Esmark, D. Pogany, C. Fürböck, H. Gossner, E. Gornik, W. Fichtner (Institute for Solid State Electronics, University of Technology, Vienna, Austria) |
| 9:30 | 3.2 |
Thermal and free carrier concentration mapping during ESD event in Smart
Power ESD protection devices using a modified laser interferometry
technique C. Fürböck, K. Esmark, M. Litzenberger, D. Pogany, G. Groos, R. Zelsacher, M. Stecher, E. Gornik (Institute for Solid State Electronics, University of Technology, Vienna, Austria) |
| 9:50 | 3.3 |
Laser Cross Section Measurement for the Evaluation of Single-Event
Effects in Integrated Circuits V. Pouget, P. Foullat, D. Lewis, H. Lapuyade, F. Darracq (IXL, Université Bordeaux 1, France) |
| 10:10 | 3.4 |
Automatic EB Fault-Tracing System Using Fuzzy-Logic Approach Katsuyoshi Miura, Koji Nakamae and Hiromu Fujioka (Department of Infomation Systems Engineering, Osaka University, Japan) |
| 10:30 | Coffee Break | |
| 11:00 | 3.5 |
Correlation of Scanning Thermal Microscopy and Near-field
Cathodoluminescence Analyses on a Blue GaN Light Emitting Device R. Heiderhoff, M. Palaniappan, J.C.H. Phang, L.J. Balk (University Wuppertal, Germany) |
| 11:20 | 3.6 |
Voltage-influence of biased interconnection line on integrated
circuit-internal current contrast measurements via magnetic force
microscopy R. Weber, M. Mertin, E. Kubalek (Gerhard-Mercator-Universität, Werkstoffe der Elektrotechnik, Duisburg, Germany) |
| 11:40 | 3.7 |
Quantification of Scanning Capacitance Microscopy Measurements for 2D
Dopant Profiling P. Malberti, L. Ciampolini, M. Ciappa, W. Fichtner (Swiss Federal Institute of Technology (ETH) Zurich, Switzerland) |
| 12:00 | 3.8 |
Cross-talk in electric force microscopy testing of parallel
sub-micrometer conducting lines U. Behnke, W. Mertin, E. Kubalek (Werkstoffe der Elektrotechnik, Gerhard-Mercator-Universität Duisburg, Germany) |
| 12:20 | 3.9 |
In-Situ SEM Observation of Electromigration in Thin Metal Films at
Accelerated Stress Conditions J. d'Haen, J. Van Ollmen, Z. Beelen, J.V. Manca, T. Martens, W. De Ceuninck, M. d'Olieslaeger, L.De Schepper, M. Cannaerts, K. Maex (Institute for Materials Research (IMO), Limburg University, The Netherlands) |
| 12:40 | 3.10 |
Analysis of High Power Devices Using Proton Beam Induced Currents M. Zmeck, T. Osipowicz, F. Watt, F. Niedernostheide, H.-J. Schulze, G. Fiege, L.J. Balk, Lehrstuhl für Elektronik, Bergische Universität Wuppertal, Germany) |