ISPSD, "Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits"
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Titre : ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits

Cité dans : [DATA224] Liste alphabétique des conférences, août 2016.
Cité dans :[99DIV081] Dates des congrès sur les Convertisseurs Statiques, avril 2013.
Cité dans : [DIV007]  Classement par type de Congrés et de revues IEEE, avril 2003.
Vers : ISPSD'2002
Vers : ISPSD'2001
Vers : ISPSD'2000
Vers : ISPSD'99
Vers : ISPSD'98
Vers : ISPSD'97
Vers : ISPSD'96
Vers : ISPSD'95
Vers : ISPSD'94
Vers : ISPSD'93
Vers : ISPSD'92
Vers : ISPSD'91
Vers : ISPSD'90
Vers : ISPSD'89


ISPSD'2002

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Number : 14th
Lieu : Hilton of Santa Fe, New Mexico.
Date : 3-7 juin 2002
Site : http://www.ti.com/ispsd02/
Site : http://www.ti.com/corp/docs/ispsd02/index.htm
Résumé : 15 octobre 2001
Notification : 21 décembre 2001
Article : 15 février 2002
Lien : ISPSD/2002/default.htm - First call for papers, le 11 octobre 2001.


ISPSD'2001

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Number : 13th
Lieu : Osaka, Japon
Date : 4-7 juin 2001
Site : http://www.rdd.kepco.co.jp/ispsd
Résumé : 15 octobre 2000
Notification : 20 décembre 2000
Article : 28 février 2001
Lien : ISPSD/2001/ispsd01.htm - First call for papers.
Lien : ISPSD/2001/default.htm - le 25 février 2001.


ISPSD'2000

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Number : 12
Lieu : Toulouse, France
Date : May 22-25, 2000
The 12th International Symposium on Power Semiconductor Devices & ICs (ISPSD2000) provides a forum for technical
discussion in all areas of power semiconductor devices and power IC’s and their applications. Areas of interest include,
but are not restricted to the following:
- Materials and Processes
- CAD/Simulation
- Devices
- Monolithic and Hybrid Power Integrations
- Packaging
- Applications
General Chair : Dr. Charitat Georges
LAAS-CNRS - Groupe CIP
7, Avenue du Colonel Roche
31077 Toulouse Cedex 4 - France
Phone: +33-5 61 33 64 57 (or 63 59)
FAX: +33-5 61 33 62 08
Lien : mailto:charitat@laas.fr
For further details about ISPSD’2000, contact the General Chair or visit the website @ http://www.laas.fr/ISPSD2000
Lien : ISPSD/2000/index.htm - Version du 24 mars 2000.
Lien : ISPSD/2000/ispsd2k.htm
Lien : ISPSD/2000/Call2000.pdf
Lien : ISPSD/2000/committe.htm
  [1] :  [DATA125] ISPSD'2000, 12th Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits, May 22-25 2000, Toulouse, France.


ISPSD'99

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Number : 11
the 1999 IEEE Applied Power Electronics Conference
Publications of CoPEC
Lien : ISPSD/1999/ispsd99.pdf - 127 ko.
  [1] : [99ART110] BRUGGERS H.J., RONGEN R.T.H., MEEUWSEN C.P., LUDIKHUISE A.W., Reliability problems due to ionic conductivity of IC encapsulation materials under high voltage conditions, ISPSD'99.
  [2] : [SHEET493] C. FURBOCK, R. THALHAMMER, M. LITZENBERGER, N. SELIGER, D. POGANY, E. GORNIK, G. WACHUTKA, A differential backside laserprobing technique for the investigation of the lateral temperature distribution in power devices, ISPSD'99, pp. 193-196.
  [3] : [99ART126] J.-P. LAUR, J.-L. SANCHEZ, M. MARMOUGET, P. AUSTIN, J. JALADE, M. BREIL, M. ROY, A new circuit-breaker integrated device for protection applications, ISPSD '99, pp. 315-318.
  [4] : [99ART125] J.-L. SANCHEZ, M. BREIL, P. AUSTIN, J.-P. LAUR, J. JALADE, B. ROUSSET, H. FOCH, A new high-voltage integrated switch: the 'Thyristor dual' function, ISPSD'99.


ISPSD'98

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Number : 10
Lieu : Kyoto, Japan, during June 3-6, 1998.
Lien : ISPSD/1998/ispsd98.txt - 3 ko, Summary of the 10th ISPSD'98 by M. Ayman Shibib
  [1] : [99ART047] BALIGA B.J., Trends in power discrete devices, Proceedings of the 10th International Symposium on Power Semiconductor Devices & ICs ISPSD 98, pp 5-10, june 1998.
  [2] : [99ART135] HORIUCHI T., SUGAWARA Y., Long-term reliability evaluation of power semiconductor devices used in substation rectifiers, ISPSD'98, pp. 195-198, 3-6 June 1998.
  [3] : [99ART136] HORI S., TSUCHITANI M., OOSAWA A., BABA Y., YAWATA S., 4.5 kV IGBT junction termination technique using the SIPOS RESURF structure, ISPSD'98, pp. 277-280, 3-6 June 1998.
  [4] : [99ART137] MIYASHITA S., YOSHIWATARI S., KOBAYASHI S., SAKURAI K., Progress in development of high power NPT-IGBT module, ISPSD'98, pp. 285-288, 3-6 June 1998.
  [5] : [99ART138] MANZINI S., GALLERANO A., CONTIERO C., Hot-electron injection and trapping in the gate oxide of submicron DMOS transistors, ISPSD'98, pp. 415-418, 3-6 June 1998.
  [6] : [99ART139] KOGA T., YAMAZAKI K., WAKIMOTO H., TAKAHASHI Y., KIRIHATA H., SEKI Y., Ruggedness and reliability of the 2.5 kV-1.8 kA power pack IGBT with a novel multi-collector structure, ISPSD'98, pp. 437-440, 3-6 June 1998.
  [7] :  [PAP208]  High turn-off current capability of parallel-connected 4.5 kV trench-IEGTs, ISPSD'98.
  [8] :  [PAP209]  Internal characterization of IGBTs using the backside laser probing technique-interpretation of measurement by numerical simulation, ISPSD'98.


ISPSD'97

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Number : 9
  [1] : [99ART100] MATSUDA H., HIYOSHI M., KAWAMURA N., Pressure contact assembly technology of high power devices, ISPSD '97, pp. 17-24, 26-29 May 1997.
  [2] : [99ART101] KHAN M.K., ZDANCEWICZ F., BHALLA A., The effect of gate doping on the electrical conduction and reliability of thick gate oxides, ISPSD'97, pp. 145-148, 26-29 May 1997.
  [3] : [99ART102] MITLEHNER H., BARTSCH W., BRUCKMANN M., DOHNKE K.O., WEINERT U., The potential of fast high voltage SiC diodes, ISPSD'97, pp. 165-168, 26-29 May 1997.
  [4] : [99ART103] SAKAMOTO K., FUCHIGAMI N., TSUNODA H., YANOKURA E., A fast-switching intelligent power MOSFET with thermal protection and negative gate protection, ISPSD'97, pp. 189-192, 26-29 May 1997.
  [5] : [99ART104] BABA Y., MATUDA N., YAWATA S., IZUMI S., KAWAMURA N., KAWAKAMI T., High reliability UMOSFET with oxide-nitride complex gate structure, ISPSD'97, pp. 369-372, 26-29 May 1997.
  [6] : [99ART112] J. YAMASHITA, N. SOEJIMA, H. HARUGUCHI, A novel effective switching loss estimation of non-punchthrough IGBTs, ISPSD'97, pp. 109-112
  [7] : [SHEET088] P. VOSS, K.H. MAIER, W. MECZYNSKI, H.W. BECKER, E. NORMAND, J.-L. WERT, D.I. OBERG, P.P. MAJEWSKI, Irradiation experiments with high-voltage power devices as a possible means to predict failure rates due to cosmic rays, ISPSD'97.
  [8] : [SHEET089] Y. TAKAHASHI, K. YOSHIKAWA, T. KOGA, M. SOUTOME, T. TAKANO, H. KIRIHATA, Y. SEKI, Ultra high-power 2.5 kV-1800 A power pack IGBT, ISPSD'97.


ISPSD'96

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Number : 8
  [1] : [99ART141] J.L. SANCHEZ, P. LETURCQ, P. AUSTIN, R. BERRIANE, M. BREIL, C. ANCEAU, C. AYELA, Design and fabrication of new high voltage current limiting devices for serial protection applications ISPSD'96, pp. 201-205.
  [2] : [SHEET291] Y. TAKAHASHI, K. YOSHIKAWA, M. SOUTOME, T. FUJII, M. ICHIJYOU, M.Y. SEKI, 2.5 kV-1000 A power pack IGBT (high power flat-packaged RC-IGBT)
  [3] :  [PAP178]  P. Dupuy, J.M. Dorkel, P. Tounsi, L. Borucki, Rapid Thermal Modelling for Smart Power and Multichip Power Circuit Design, ISPSD'96 Proceedings (1996). Maui, Hawaii USA, May 20-23, 1996, pp. 173-176.
  [4] :  [PAP251]  B. MURARI, D. ROSSI, Power Ics in motor control, ISPD'96


ISPSD'95

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Number : 7
ISPSD : IEEE International Symposium on Power Semiconductor Devices & ICs, 1995, 95CH35785.
CONFERENCE : Proceedings of the 1995 IEEE International Symposium on Power Semicomductor Devices and ICs.
Lieu : Yokohama, Jpn,
Sponsored : IEEE. Ei Conference Number: 43789. (ISBN 0-7803-2619-9)
LOCATION : Stanford.
  [1] :  [PAP103]  Chung, Yeonbae ; Burk, Dorothea E.; Physically based DMOS transistor model implemented in SPICE for advanced power IC TCAD, ISPSD'95.
  [2] : [SHEET072] G. MAJUMDAR, T. HIRAMOTO, T. SHIRASAWA, T. TANAKA, K. MOCHIZUKI, Active surge voltage clamped 600 A IPM for high power application, Proceedings of ISPSD'95, 23-25 May 1995, pp.75-79.
  [3] : [SHEET292] W. WU, M. HELD, P. JACOB, P. SCACCO, A. BIROLINI, Thermal stress related packaging failure in power IGBT modules, ISPSD'95.


ISPD'94

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Number : 6
  [1] : [SHEET288] Matsuda H. et al., Analysis of GTO failure mode during DC voltage blocking, , ISPSD'94 Davos(Switzerland), May 31-June 2 1994, pp. 221-225.
  [2] :  [PAP207]  A study on the IGBT's turn-off failure and inhomogeneous operation, ISPSD'94.


ISPSD'93

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Number : 5
Lieu : Monterey CA USA
Date : Mai 1993
Info. : Fifth Internationnal Symposium on Power Semiconductor Devices & ICs (ISPSD)
  [1] :  [PAP009]  J.-L. SANCHEZ, R. BERRIANE, J. JALADE, Light Trigged thyristor with a MOS amplyfing gate : an example of galvanically insulated high voltage integrated switch, ISPSD'93, Monterey CA USA, Mai 1993, pp. 281-286.
  [2] :  [PAP195]  A study on the short circuit destruction of IGBTs, ISPSD'93.


ISPSD'92

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Number : 4


ISPSD'91

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Number : 3
  [1] :  [DATA041] Conférence ISPSD'91, Third Internationnal Symposium on Power Semiconductor Devices & ICs, Baltimore MD, April 22-24 1991.
  [2] : [99ART099] S.H. LARRY TU, B.J. BALIGA, Optimization of the MPS rectifier via variation of Schottky region area, ISPSD'91, pp. 109-112, 1991.
  [3] : [99ART109] SHENAI K., HENNESSY W., CHEZZO M., A novel trench planarization technique using polysilicon refill, polysilicon oxidation, and oxide etchback, ISPSD'91.


ISPSD'90

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Number : 2


ISPSD'89

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Number : 1


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